# US 10,374,189 B2 · Opto-electronic element and method for manufacturing the same

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- Number: US 10,374,189 B2
- Document ID: US10374189B2
- Status: Granted
- Kind: B2
- Application number: 15/234,657
- Filed: 2016-08-11
- Published: 2017-05-25
- Granted: 2019-08-06
- Earliest claimed: 2015-11-20
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Dong Chan Kim
- Web page: https://patentgrep.com/patent/US10374189B2

## CPC

- H10K 30/865: {Intermediate layers comprising a mixture of materials of the adjoining active layers}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10H 20/833: Transparent materials
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10K 50/816: Multilayers, e.g. transparent multilayers
- H10K 50/828: Transparent cathodes, e.g. comprising thin metal layers
- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- H10H 20/032: {of electrodes}
- H10H 20/0364: {of interconnections}
- H10K 59/1201: {Manufacture or treatment}
- H10K 59/38: comprising colour filters or colour changing media [CCM]
- H10K 2101/80: {Composition varying spatially, e.g. having a spatial gradient}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

An opto-electronic element according to an exemplary embodiment of the present disclosure includes a transparent conductive layer including a first material made of a metal and a second material made of a metal halide.

## Claims

### Claim 1

An opto-electronic element comprising:
a transparent conductive layer formed by a reaction of a first material made of a metal and a second material made of a metal halide,
wherein the transparent conductive layer is a single layer,
wherein the metal halide of the second material comprises at least one selected from the group consisting of chloride, bromide and iodide of Group 1 elements, chloride, bromide and iodide of Group 2 elements, Lanthanide halides, Actinide halides, halides of transition metals, and halides of post transition metals, and
wherein the metal of the first material comprises at least one selected from the group consisting of Yb, Tm, Sm, Eu, Gd, La, Ce, Pr, Nd, Pm, Tb, Dy, Ho, Er, Lu, Ac, Th, and Pa.

### Claim 2 (depends on 1)

The opto-electronic element of claim 1, wherein:
a valence electron number of the metal of the first material is equal to or greater than a valence electron number of the metal of the metal halide included in the second material.

### Claim 3 (depends on 1)

The opto-electronic element of claim 1, wherein:
the metal of the first material comprises at least one selected from the group consisting of Group 1 elements, Group 2 elements, Lanthanide elements, Actinide elements, transition metals, and post transition metals.

### Claim 4 (depends on 1)

The opto-electronic element of claim 1, wherein:
the metal halide of the second material comprises at least one selected from the group consisting of YbF2, YbF3, SmF2, SmF3, EuF2, EuF3, TmF2, TmF3, CuF, TlF, AgF, CdF2, HgF2, SnF2, PbF2, BiF3, ZnF2, MnF2, FeF2, GeF2, CoF2, NiF2, AlF3, ThF4, UF3, LiCl, NaCl, KCl, RbCl, CsCl, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, YbCl2, YbCl3, SmCl2, SmCl3, EuCl2, EuCl3, TmCl2, TmCl3, CuCl, TlCl, AgCl, CdCl2, HgCl2, SnCl2, PbCl2, BiCl3, ZnCl2, MnCl2, FeCl2, GeCl2, CoCl2, NiCl2, AlCl3, ThCl4, UCl3, LiBr, NaBr, KBr, RbBr, CsBr, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, YbBr2, YbBr3, SmBr2, SmBr3, EuBr2, EuBr3, TmBr2, TmBr3, CuBr, TlBr, AgBr, CdBr2, HgBr2, SnBr2, PbBr2, BiBr3, ZnBr2, MnBr2, FeBr2, GeBr2, CoBr2, NiBr2, AlBr3, ThBr4, UBr3, LiI, NaI, KI, RbI, CsI, BeI2, MgI2, CaI2, SrI2, BaI2, YbI2, YbI3, SmI2, SmI3, EuI2, EuI3, TmI2, TmI3, CuI, TlI, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, GeI2, CoI2, NiI2, AlI3, ThI4, and UI3.

### Claim 5 (depends on 1)

The opto-electronic element of claim 1, wherein:
the transparent conductive layer comprises more of the first material than the second material.

### Claim 6 (depends on 1)

The opto-electronic element of claim 1, wherein:
the transparent conductive layer comprises a same amount of the first material and the second material, or the transparent conductive layer comprises more of the second material than the first material.

### Claim 7 (depends on 1)

The opto-electronic element of claim 1, further comprising:
a metal oxide layer on the transparent conductive layer.

### Claim 8 (depends on 7)

The opto-electronic element of claim 7, wherein:
the metal oxide layer comprises ITO and/or IZO.

### Claim 9 (depends on 1)

The opto-electronic element of claim 1, further comprising:
a first electrode;
an emission layer on the first electrode; and
a second electrode on the emission layer, and
at least one of the first electrode and the second electrode comprises the transparent conductive layer.

### Claim 10 (depends on 9)

The opto-electronic element of claim 9, wherein:
the first electrode is a reflective electrode, and the second electrode comprises the transparent conductive layer.

### Claim 11 (depends on 9)

The opto-electronic element of claim 9, wherein:
the emission layer is to emit white light by a combination of a plurality of emission layers.

### Claim 12 (depends on 11)

The opto-electronic element of claim 11, wherein:
the plurality of emission layers comprises two layers or three layers.

### Claim 13 (depends on 12)

The opto-electronic element of claim 12, wherein:
the plurality of emission layers comprises two layers, and light emitted from the plurality of emission layers is mixed to emit white light.

### Claim 14 (depends on 12)

The opto-electronic element of claim 12, wherein:
the plurality of emission layers comprises three layers, and the plurality of emission layers are to respectively emit red light, green light, and blue light; or blue light, yellow light, and blue light.

### Claim 15 (depends on 12)

The opto-electronic element of claim 12, further comprising:
a charge generation layer between the plurality of emission layers.

### Claim 16 (depends on 9)

The opto-electronic element of claim 9, wherein:
at least one of the first electrode and the second electrode comprises a lower region comprising more of the first material than the second material, and an upper region comprising more of the second material than the first material.

### Claim 17 (depends on 16)

The opto-electronic element of claim 16, wherein:
in the at least one of the first electrode and the second electrode, an amount of the first material increases from an upper side to a lower side, and an amount of the second material increases from the lower side to the upper side.

### Claim 18 (depends on 16)

The opto-electronic element of claim 16, further comprising:
a metal oxide layer on the upper region, and the metal oxide layer comprises ITO and/or IZO.

### Claim 19

A method for manufacturing an opto-electronic element, the method comprising:
forming a transparent conductive layer by a reaction of a first material made of a metal and a second material made of a metal halide,
wherein the transparent conductive layer is a single layer,
wherein the metal halide of the second material comprises at least one selected from the group consisting of chloride, bromide and iodide of Group 1 elements, chloride, bromide and iodide of Group 2 elements, Lanthanide halides, Actinide halides, halides of transition metals, and halides of post transition metals, and
wherein the metal of the first material comprises at least one selected from the group consisting of Yb, Tm, Sm, Eu, Gd, La, Ce, Pr, Nd, Pm, Tb, Dy, Ho, Er, Lu, Ac, Th, and Pa.

### Claim 20 (depends on 19)

The method of claim 19, wherein:
the metal halide of the second material comprises at least one selected from the group consisting of YbF2, YbF3, SmF2, SmF3, EuF2, EuF3, TmF2, TmF3, CuF, TlF, AgF, CdF2, HgF2, SnF2, PbF2, BiF3, ZnF2, MnF2, FeF2, GeF2, CoF2, NiF2, AlF3, ThF4, UF3, LiCl, NaCl, KCl, RbCl, CsCl, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, YbCl2, YbCl3, SmCl2, SmCl3, EuCl2, EuCl3, TmCl2, TmCl3, CuCl, TlCl, AgCl, CdCl2, HgCl2, SnCl2, PbCl2, BiCl3, ZnCl2, MnCl2, FeCl2, GeCl2, CoCl2, NiCl2, AlCl3, ThCl4, UCl3, LiBr, NaBr, KBr, RbBr, CsBr, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, YbBr2, YbBr3, SmBr2, SmBr3, EuBr2, EuBr3, TmBr2, TmBr3, CuBr, TlBr, AgBr, CdBr2, HgBr2, SnBr2, PbBr2, BiBr3, ZnBr2, MnBr2, FeBr2, GeBr2, CoBr2, NiBr2, AlBr3, ThBr4, UBr3, LiI, NaI, KI, RbI, CsI, BeI2, MgI2, CaI2, SrI2, BaI2, YbI2, YbI3, SmI2, SmI3, EuI2, EuI3, TmI2, TmI3, CuI, TlI, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, GeI2, CoI2, NiI2, AlI3, ThI4, and UI3.

### Claim 21 (depends on 19)

The method of claim 19, further comprising:
forming a first electrode;
forming an emission layer on the first electrode; and
forming a second electrode on the emission layer,
wherein at least one of the forming of the first electrode and the forming of the second electrode comprises depositing a lower layer comprising the first material and an upper layer comprising the second material on the lower layer, diffusing the first material and the second material, and forming the transparent conductive layer.

### Claim 22 (depends on 21)

The method of claim 21, wherein:
during the forming of the transparent conductive layer, the metals included in the first material and the second material are substituted with each other.

### Claim 23 (depends on 22)

The method of claim 22, wherein:
the first material is distributed more than the second material in a lower side of the transparent conductive layer.

### Claim 24 (depends on 21)

The method of claim 21, further comprising:
forming a metal oxide layer on the transparent conductive layer.

### Claim 25 (depends on 21)

The method of claim 21, wherein:
at least one of the forming of the first electrode and the forming of the second electrode utilizes a solution method, a thermal evaporation method, a physical vapor deposition method, and/or a chemical vapor deposition method.

### Claim 26 (depends on 21)

The method of claim 21, wherein:
the first electrode is a reflective electrode, and the second electrode comprises the transparent conductive layer.

### Claim 27 (depends on 19)

The method of claim 19, further comprising:
forming a first electrode;
forming an emission layer on the first electrode; and
forming a second electrode on the emission layer, and
at least one of the forming of the first electrode and the forming of the second electrode comprises co-depositing the first material and the second material to form the transparent conductive layer.