# US 10,374,184 B2 · Light-emitting device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,184 B2 - Document ID: US10374184B2 - Status: Granted - Kind: B2 - Application number: 15/332,195 - Filed: 2016-10-24 - Published: 2017-02-09 - Granted: 2019-08-06 - Earliest claimed: 2009-09-16 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shingo Eguchi; Yoshiaki Oikawa; Kenichi Okazaki; Hotaka Maruyama - Web page: https://patentgrep.com/patent/US10374184B2 ## CPC - H10K 50/11: characterised by the electroluminescent [EL] layers - H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/126: Shielding, e.g. light-blocking means over the TFTs - H10K 59/131: Interconnections, e.g. wiring lines or terminals - H10K 77/111: {Flexible substrates} - H10D 30/6732: {Bottom-gate only TFTs} - H10D 30/6745: {Polycrystalline or microcrystalline silicon} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 86/441: {Interconnections, e.g. scanning lines} - Y02E 10/549: Organic PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer. ## Claims ### Claim 1 An electronic device comprising a display panel having a display region, and a housing incorporating the display panel, wherein the display panel comprises a display element and a transistor electrically connected to the display element, wherein the transistor is formed over a first insulating layer, wherein the display panel includes a region where the display panel is bent, wherein the display region overlaps with the region where the display panel is bent, wherein the display panel comprises: a flexible substrate; a driving circuit portion over the flexible substrate, comprising: the transistor comprising: a gate over the flexible substrate; a second insulating layer over the gate; a semiconductor layer over the second insulating layer; a source over the semiconductor layer; a drain over the semiconductor layer; a third insulating layer over the semiconductor layer, the source, and the drain, a part of the third insulating layer being in contact with a part of the semiconductor layer between the source and the drain; and a conductive layer over the third insulating layer, the conductive layer overlapping with the gate and a channel region of the transistor, wherein the channel region is between the source and the drain; and a terminal portion comprising: a first electrode layer over the flexible substrate; the second insulating layer over the first electrode layer, the second insulating layer including a first contact hole; a second electrode layer over and in contact with the first electrode layer through the first contact hole; the third insulating layer over the second electrode layer, the third insulating layer including a second contact hole; and a third electrode layer over and in contact with the second electrode layer through the second contact hole, wherein the first electrode layer is formed from a same layer as the gate, wherein the second electrode layer is formed from a same layer as the source and the drain, and wherein the third electrode layer is formed from a same layer as the conductive layer. ### Claim 2 (depends on 1) The electronic device according to claim 1, wherein the transistor comprises a channel formation region which comprises an oxide semiconductor material. ### Claim 3 (depends on 1) The electronic device according to claim 1, wherein the transistor comprises a channel formation region which comprises polycrystalline silicon. ### Claim 4 (depends on 1) The electronic device according to claim 1, wherein the electronic device is a mobile phone. ### Claim 5 (depends on 1) The electronic device according to claim 1, wherein the flexible substrate is a plastic substrate having a light-transmitting property. ### Claim 6 (depends on 1) The electronic device according to claim 1, wherein the flexible substrate comprises a polyester resin, a polyacrylonitrile resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamide imide resin, or a polyvinylchloride resin. ### Claim 7 (depends on 1) The electronic device according to claim 1, wherein the first insulating layer comprises at least one layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxide layer containing nitrogen, and a silicon nitride layer containing oxygen. ### Claim 8 An electronic device comprising: a housing; a display panel comprising a transistor, wherein the display panel comprises a display region, the display region comprising a first region and a second region, the first region disposed at a front of the housing, and the second region disposed between the first region and an edge of the display panel, wherein the transistor is formed over a first insulating layer; wherein the display panel is bent at least in a region between the first region and the second region, wherein the display region overlaps with the region where the display panel is bent, wherein the display panel comprises: a flexible substrate; a driving circuit portion over the flexible substrate, comprising: the transistor comprising: a gate over the flexible substrate; a second insulating layer over the gate; a semiconductor layer over the second insulating layer; a source over the semiconductor layer; a drain over the semiconductor layer; a third insulating layer over the semiconductor layer, the source, and the drain, a part of the third insulating layer being in contact with a part of the semiconductor layer between the source and the drain; and a conductive layer over the third insulating layer, the conductive layer overlapping with the gate and a channel region of the transistor, wherein the channel region is between the source and the drain; and a terminal portion comprising: a first electrode layer over the flexible substrate; the second insulating layer over the first electrode layer, the second insulating layer including a first contact hole; a second electrode layer over and in contact with the first electrode layer through the first contact hole; the third insulating layer over the second electrode layer, the third insulating layer including a second contact hole; and a third electrode layer over and in contact with the second electrode layer through the second contact hole, wherein the first electrode layer is formed from a same layer as the gate, wherein the second electrode layer is formed from a same layer as the source and the drain, and wherein the third electrode layer is formed from a same layer as the conductive layer. ### Claim 9 (depends on 8) The electronic device according to claim 8, wherein the transistor comprises a channel formation region which comprises an oxide semiconductor material. ### Claim 10 (depends on 8) The electronic device according to claim 8, wherein the transistor comprises a channel formation region which comprises polycrystalline silicon. ### Claim 11 (depends on 8) The electronic device according to claim 8, wherein the electronic device is a mobile phone. ### Claim 12 (depends on 8) The electronic device according to claim 8, wherein the flexible substrate is a plastic substrate having a light-transmitting property. ### Claim 13 (depends on 8) The electronic device according to claim 8, wherein the flexible substrate comprises a polyester resin, a polyacrylonitrile resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamide imide resin, or a polyvinylchloride resin. ### Claim 14 (depends on 8) The electronic device according to claim 8, wherein the first insulating layer comprises at least one layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxide layer containing nitrogen, and a silicon nitride layer containing oxygen. ### Claim 15 An electronic device comprising: a housing; a display panel having a display region, wherein the display panel comprises a display element and a transistor electrically connected to the display element; and a touch panel, wherein the transistor is formed over a first insulating layer, wherein the display panel includes a region where the display panel is bent, wherein the display region and the touch panel overlap with the region where the display panel is bent, wherein the display panel comprises: a flexible substrate; a driving circuit portion over the flexible substrate, comprising: the transistor comprising: a gate over the flexible substrate; a second insulating layer over the gate; a semiconductor layer over the second insulating layer; a source over the semiconductor layer; a drain over the semiconductor layer; a third insulating layer over the semiconductor layer, the source, and the drain, a part of the third insulating layer being in contact with a part of the semiconductor layer between the source and the drain; and a conductive layer over the third insulating layer, the conductive layer overlapping with the gate and a channel region of the transistor, wherein the channel region is between the source and the drain; and a terminal portion comprising: a first electrode layer over the flexible substrate; the second insulating layer over the first electrode layer, the second insulating layer including a first contact hole; a second electrode layer over and in contact with the first electrode layer through the first contact hole; the third insulating layer over the second electrode layer, the third insulating layer including a second contact hole; and a third electrode layer over and in contact with the second electrode layer through the second contact hole, wherein the first electrode layer is formed from a same layer as the gate, wherein the second electrode layer is formed from a same layer as the source and the drain, and wherein the third electrode layer is formed from a same layer as the conductive layer. ### Claim 16 (depends on 15) The electronic device according to claim 15, wherein the transistor comprises a channel formation region which comprises an oxide semiconductor material. ### Claim 17 (depends on 15) The electronic device according to claim 15, wherein the transistor comprises a channel formation region which comprises polycrystalline silicon. ### Claim 18 (depends on 15) The electronic device according to claim 15, wherein the electronic device is a mobile phone. ### Claim 19 (depends on 15) The electronic device according to claim 15, wherein the flexible substrate is a plastic substrate having a light-transmitting property. ### Claim 20 (depends on 15) The electronic device according to claim 15, wherein the flexible substrate comprises a polyester resin, a polyacrylonitrile resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamide imide resin, or a polyvinylchloride resin. ### Claim 21 (depends on 15) The electronic device according to claim 15, wherein the first insulating layer comprises at least one layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxide layer containing nitrogen, and a silicon nitride layer containing oxygen.