Method for making devices having dielectric layers with thiosulfate-containing polymers

A method for preparing an electronic device comprising:

• independently applying a precursor dielectric composition and an organic semiconductor composition to a substrate to form an applied precursor dielectric composition and an applied organic semiconductor composition, respectively, and
• subjecting the applied precursor dielectric composition to curing conditions to form a gate dielectric layer comprising a photochemically cured or thermally cured product of a photocurable or thermally curable thiosulfate-containing polymer, which gate dielectric layer is in physical contact with the applied organic semiconductor composition,
• wherein the precursor dielectric composition comprises:
• (1) the photocurable or thermally curable thiosulfate-containing polymer that has a Tg of at least 50° C. and that comprises:
• an organic polymer backbone that comprises at least one repeating unit comprising (a) recurring units comprising pendant thiosulfate groups;
• and the photocurable or thermally curable thiosulfate-containing polymers further comprises, either within the (a) recurring units or within recurring units different from the (a) recurring units, charge balancing cations,
• wherein the photocurable thiosulfate-containing polymer has sensitivity to irradiation at a wavelength of from 150 nm to 700 nm to cause the pendant thiosulfate groups to form disulfide bonds;
• (2) optionally, an electron-accepting photosensitizer component;
• and
• (3) optionally, one or more organic solvents in which the photocurable or thermally curable thiosulfate polymer is dissolved or dispersed.