# US 10,374,159 B2 · Optoelectronics integration by transfer process

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- Number: US 10,374,159 B2
- Document ID: US10374159B2
- Status: Granted
- Kind: B2
- Application number: 15/280,420
- Filed: 2016-09-29
- Published: 2017-01-19
- Granted: 2019-08-06
- Earliest claimed: 2014-02-28
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Jeehwan Kim; Ning Li; Devendra K. Sadana; Tze-bin Song
- Web page: https://patentgrep.com/patent/US10374159B2

## CPC

- H10K 71/80: using temporary substrates
- H10K 71/50: Forming devices by joining two substrates together, e.g. lamination techniques
- H10K 50/171: {Electron injection layers}
- H10K 85/113: {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene}
- H10K 85/1135: {Polyethylene dioxythiophene [PEDOT]; Derivatives thereof}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A method for fabricating an optoelectronic device includes forming an adhesion layer on a substrate, forming a material layer on the adhesion layer and applying release tape to the material layer. The substrate is removed at the adhesion layer by mechanically yielding the adhesion layer. A conductive layer is applied to the material layer on a side opposite the release tape to form a transfer substrate. The transfer substrate is transferred to a target substrate to join the target substrate to the conductive layer of the transfer substrate. The release tape is removed from the material layer to form a top emission optoelectronic device.

## Claims

### Claim 1

A photoelectronic device, comprising:
an organic transparent conductive material;
a first transparent conductor layer formed directly on the organic transparent conductive material to form a top electrode; and
light emitting layers being molecularly bonded directly to the organic transparent conductive material after a transfer process such that an interface between the top electrode and the light emitting layers is free from damage caused by exposure to vacuum formation processes.

### Claim 2 (depends on 1)

The device as recited in claim 1, wherein the first transparent conductor includes a multi-layer structure.

### Claim 3 (depends on 1)

The device as recited in claim 1, wherein the photoelectronic device includes an organic light emitting diode.

### Claim 4 (depends on 3)

The device as recited in claim 3, wherein the light emitting layers include a hole injection layer and an electron injection layer.

### Claim 5 (depends on 1)

The device as recited in claim 1, further comprising a bottom electrode coupled to the light emitting layers, the bottom electrode including one of opaque or transparent material.

### Claim 6 (depends on 1)

The device as recited in claim 1, further comprising one or more additional photoelectronic devices stacked therewith.

### Claim 7 (depends on 1)

The device as recited in claim 1, wherein the organic transparent conductive material includes PEDOT:PSS.

### Claim 8

A photoelectronic device, comprising:
a transfer portion including a transparent conductive layer;
a target substrate, including a substrate and light emitting layers; and
an organic conductive layer formed between the transparent conductive layer and the light emitting layers wherein the organic conductive layer was formed after formation of both the transfer portion and the target substrate such that an interface on each side of the organic conductive layer is free from damage caused by exposure to vacuum formation processes.