# US 10,374,151 B2 · Spin current magnetoresistance effect element and magnetic memory > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,151 B2 - Document ID: US10374151B2 - Status: Granted - Kind: B2 - Application number: 16/055,589 - Filed: 2018-08-06 - Published: 2019-02-28 - Granted: 2019-08-06 - Earliest claimed: 2017-08-22 - Assignees: TDK Corporation - Applicants: TDK Corporation - Inventors: Eiji Komura; Yohei Shiokawa - Web page: https://patentgrep.com/patent/US10374151B2 ## CPC - H10N 50/10: Magnetoresistive devices - G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)} - G01R 33/098: {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors} - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - H10N 50/80: Constructional details - H10N 52/00: Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00) - H10N 52/80: Constructional details - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract Provided is a spin current magnetoresistance effect element, including: a magnetoresistance effect element including a first ferromagnetic metal layer, a second ferromagnetic metal layer configured for magnetization direction to be changed, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and a spin-orbit torque wiring extending in a first direction which intersects a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer, wherein, a third end portion of the non-magnetic layer is located between a first end portion of the first ferromagnetic metal layer and a second end portion of the second ferromagnetic metal layer as viewed from the lamination direction on one of side surfaces of the magnetoresistance effect element. ## Claims ### Claim 1 A spin current magnetoresistance effect element, comprising: a magnetoresistance effect element including a first ferromagnetic metal layer, a second ferromagnetic metal layer configured for magnetization direction to be changed, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and a spin-orbit torque wiring extending in a first direction which intersects a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer, wherein, a third end portion of the non-magnetic layer is located between a first end portion of the first ferromagnetic metal layer and a second end portion of the second ferromagnetic metal layer as viewed from the lamination direction on one of side surfaces of the magnetoresistance effect element. ### Claim 2 (depends on 1) The spin current magnetoresistance effect element according to claim 1, wherein a distance between the second end portion and the third end portion is longer than a distance between the first end portion and the third end portion. ### Claim 3 (depends on 1) The spin current magnetoresistance effect element according to claim 1, wherein the one of side surfaces on which the first end portion, the second end portion, and the third end portion are present is located in the first direction of the magnetoresistance effect element. ### Claim 4 (depends on 2) The spin current magnetoresistance effect element according to claim 2, wherein the one of side surfaces on which the first end portion, the second end portion, and the third end portion are present is located in the first direction of the magnetoresistance effect element. ### Claim 5 (depends on 1) The spin current magnetoresistance effect element according to claim 1, wherein a distance between the second end portion and the third end portion is longer than a thickness of the spin-orbit torque wiring. ### Claim 6 (depends on 2) The spin current magnetoresistance effect element according to claim 2, wherein a distance between the second end portion and the third end portion is longer than a thickness of the spin-orbit torque wiring. ### Claim 7 (depends on 3) The spin current magnetoresistance effect element according to claim 3, wherein a distance between the second end portion and the third end portion is longer than a thickness of the spin-orbit torque wiring. ### Claim 8 (depends on 4) The spin current magnetoresistance effect element according to claim 4, wherein a distance between the second end portion and the third end portion is longer than a thickness of the spin-orbit torque wiring. ### Claim 9 (depends on 1) The spin current magnetoresistance effect element according to claim 1, wherein a distance between the first end portion and the third end portion is shorter than a thickness of the spin-orbit torque wiring. ### Claim 10 (depends on 2) The spin current magnetoresistance effect element according to claim 2, wherein a distance between the first end portion and the third end portion is shorter than a thickness of the spin-orbit torque wiring. ### Claim 11 (depends on 3) The spin current magnetoresistance effect element according to claim 3, wherein a distance between the first end portion and the third end portion is shorter than a thickness of the spin-orbit torque wiring. ### Claim 12 (depends on 4) The spin current magnetoresistance effect element according to claim 4, wherein a distance between the first end portion and the third end portion is shorter than a thickness of the spin-orbit torque wiring. ### Claim 13 (depends on 5) The spin current magnetoresistance effect element according to claim 5, wherein a distance between the first end portion and the third end portion is shorter than a thickness of the spin-orbit torque wiring. ### Claim 14 (depends on 6) The spin current magnetoresistance effect element according to claim 6, wherein a distance between the first end portion and the third end portion is shorter than a thickness of the spin-orbit torque wiring. ### Claim 15 (depends on 1) The spin current magnetoresistance effect element according to claim 1, wherein a distance between the second end portion and the third end portion is shorter than a width of the second ferromagnetic metal layer in a direction perpendicular to the first direction and the lamination direction. ### Claim 16 (depends on 15) The spin current magnetoresistance effect element according to claim 15, wherein a distance between the first end portion and the third end portion is shorter than the width of the second ferromagnetic metal layer in the direction perpendicular to the first direction and the lamination direction. ### Claim 17 (depends on 1) The spin current magnetoresistance effect element according to claim 1, wherein a distance between the second end portion and the third end portion is longer than a width of the second ferromagnetic metal layer in a direction perpendicular to the first direction and the lamination direction. ### Claim 18 (depends on 17) The spin current magnetoresistance effect element according to claim 17, wherein a distance between the first end portion and the third end portion is longer than the width of the second ferromagnetic metal layer in the direction perpendicular to the first direction and the lamination direction. ### Claim 19 (depends on 1) The spin current magnetoresistance effect element according to claim 1, wherein the one of side surfaces of the magnetoresistance effect element is an inclined surface extending from the first ferromagnetic metal layer toward the second ferromagnetic metal layer in the lamination direction. ### Claim 20 (depends on 1) A magnetic memory, comprising: the plurality of spin current magnetoresistance effect elements according to claim 1.