# US 10,374,149 B2 · Magnetic tunnel junctions

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- Number: US 10,374,149 B2
- Document ID: US10374149B2
- Status: Granted
- Kind: B2
- Application number: 16/006,588
- Filed: 2018-06-12
- Published: 2018-10-11
- Granted: 2019-08-06
- Earliest claimed: 2016-05-13
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Wei Chen; Witold Kula; Manzar Siddik; Suresh Ramarajan; Jonathan D. Harms
- Web page: https://patentgrep.com/patent/US10374149B2

## CPC

- H10N 50/80: Constructional details
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- H10B 61/10: {comprising components having two electrodes, e.g. diodes or MIM elements}
- H10N 50/10: Magnetoresistive devices
- H10N 50/85: Materials of the active region
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

## Claims

### Claim 1

A magnetic tunnel junction comprising:
a conductive first magnetic electrode comprising magnetic recording material;
a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;
a non-magnetic tunnel insulator material between the first and second electrodes; and
the magnetic reference material of the second electrode comprising a synthetic antiferromagnetic construction comprising:
two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other, the one magnetic region comprising a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50; the CoxFeyBz being directly against the tunnel insulator;
a non-magnetic region comprising an Os-containing material between the two spaced magnetic regions;
the other magnetic region comprising a magnetic Co-containing material; and
the one magnetic region comprises at least one of elemental-form W, elemental-form Mo, elemental-form Fe, CoaFebWc, CoaFebMoc, and CoaFebTac directly against the CoxFeyBz, where “a” is from 0 to 50, “b” is from 50 to 99, and “c” is from 1 to 50, the magnetic recording material comprising CoaFebWc directly against the CoxFeyBz.

### Claim 2

A magnetic tunnel junction comprising:
a conductive first magnetic electrode comprising magnetic recording material;
a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;
a non-magnetic tunnel insulator material between the first and second electrodes; and
the magnetic reference material of the second electrode comprising a synthetic antiferromagnetic construction comprising:
two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other, the one magnetic region comprising a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50; the CoxFeyBz being directly against the tunnel insulator;
a non-magnetic region comprising an Os-containing material between the two spaced magnetic regions;
the other magnetic region comprising a magnetic Co-containing material; and
the one magnetic region comprises at least one of elemental-form W, elemental-form Mo, elemental-form Fe, CoaFebWc, CoaFebMoc, and CoaFebTac directly against the CoxFeyBz, where “a” is from 0 to 50, “b” is from 50 to 99, and “c” is from 1 to 50, the magnetic recording material comprising CoaFebMoc directly against the CoxFeyBz.