# US 10,374,139 B2 · Pre-product and method for producing a strip-like high-temperature superconductor

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- Number: US 10,374,139 B2
- Document ID: US10374139B2
- Status: Granted
- Kind: B2
- Application number: 15/329,846
- Filed: 2015-07-23
- Published: 2017-09-21
- Granted: 2019-08-06
- Earliest claimed: 2014-07-31
- Assignees: BASF SE
- Applicants: BASF SE
- Inventors: Brygida Wojtyniak; Viktor Weimann; Michael Baecker; Martina Falter
- Web page: https://patentgrep.com/patent/US10374139B2

## CPC

- H10N 60/01: Manufacture or treatment
- B05D 1/18: performed by dipping
- B05D 1/265: {Extrusion coatings}
- B05D 7/14: to metal, e.g. car bodies (involving a chemical reaction between the metal and the coating C23)
- H01B 12/02: characterised by their form
- H10N 60/0548: {by deposition and subsequent treatment, e.g. oxidation of pre-deposited material}
- H10N 60/0632: {Intermediate layers, e.g. for growth control}
- H10N 60/203: {comprising high-Tc ceramic materials}
- H10N 60/855: {Ceramic superconductors}
- H01B 12/06: Films or wires on bases or cores
- Y02E 40/60: Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

The present invention relates to a precursor (1) for production of a high-temperature superconductor (HTS) in ribbon form, comprising a metallic substrate (10) in ribbon form having a first ribbon side (11) and a second ribbon side (12), wherein, on the first ribbon side (11), (a) the substrate (10) has a defined texture as template for crystallographically aligned growth of a buffer layer or an HTS layer and (b) an exposed surface of the substrate (10) is present or one or more layers (20,30) are present that are selected from the group consisting of: buffer precursor layer, pyrolyzed buffer precursor layer, buffer layer, HTS precursor layer, pyrolyzed HTS buffer precursor layer and pyrolyzed and further consolidated HTS buffer precursor layer, and, on the second ribbon side (12), at least one ceramic barrier layer (40) that protects the substrate (10) against oxidation or a precursor which is converted to such a layer during the HTS crystallization annealing or the pyrolysis is present, wherein, when one or more layers (20, 30) are present on the first ribbon side (11), the ceramic barrier layer (40) or the precursor thereof has a different chemical composition and/or a different texture than the layer (20) arranged on the first ribbon side (11) and directly adjoining the substrate (10). In this precursor, the barrier layer (40) is a layer that delays or prevents ingress of oxygen to the second ribbon side (12) and is composed of conductive ceramic material or a precursor which is converted to such a precursor during the HTS crystallization annealing or the pyrolysis, and the ceramic material is an electrically conductive metal oxide or an electrically conductive mixture of metal oxides, wherein the conductive metal oxide or one or more metal oxides in the conductive mixture is/are preferably metal oxide(s) doped with an extraneous metal.

## Claims

### Claim 1

A precursor for production of a high-temperature superconductor (HTS) in ribbon form, comprising:
a metallic substrate in ribbon form having a first ribbon side and a second ribbon side,
wherein, on the first ribbon side,
(a) the substrate has a defined texture as template for crystallographically aligned growth of a buffer layer or an HTS layer
and
(b) an exposed surface of the substrate is present or one or more layers are present that are selected from the group consisting of: buffer precursor layer, pyrolyzed buffer precursor layer, buffer layer, HTS precursor layer, pyrolyzed HTS buffer precursor layer and pyrolyzed and further consolidated HTS buffer precursor layer,
and,
on the second ribbon side,
at least one ceramic barrier layer that protects the substrate against oxidation or a precursor which is converted to such a layer during the HTS crystallization annealing or the pyrolysis is present,
wherein, when one or more layers are present on the first ribbon side, the ceramic barrier layer or the precursor thereof has a different chemical composition and/or a different texture than the layer arranged on the first ribbon side and directly adjoining the substrate,
wherein
the barrier layer is a layer of conductive ceramic material that delays or prevents ingress of oxygen to the second ribbon side, or a precursor which is converted to such a layer during the HTS crystallization annealing or the pyrolysis,
and
the ceramic material is an electrically conductive metal oxide or an electrically conductive mixture of metal oxides.

### Claim 2 (depends on 1)

The precursor according to claim 1, wherein the conductive metal oxide or one or more metal oxides in the conductive mixture is/are metal oxide(s) doped with an extraneous metal.

### Claim 3 (depends on 1)

The precursor according to claim 1, wherein, on the first ribbon side,
a single buffer layer is present and the buffer layer has been grown on by epitaxial means
or
two or more buffer layers that have been grown on by epitaxial means are present.

### Claim 4 (depends on 1)

The precursor according to claim 1, wherein the metal oxide doped with an extraneous metal is selected from the group consisting of doped zinc oxide, doped indium oxide, niobium-doped strontium titanate, lanthanum nickelate and mixtures thereof.

### Claim 5 (depends on 1)

The precursor according to claim 1, wherein the doping level of the metal oxide doped with an extraneous metal is at least 1%, based on the total number of metal ions in the barrier layer.

### Claim 6 (depends on 1)

A method for producing an HTS in ribbon form, comprising:
providing or producing a precursor according to claim 1, wherein a pyrolyzed HTS precursor layer is present on the first ribbon side,
crystallization annealing of the precursor.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the ceramic barrier layer is applied to the metallic substrate by a CSD (chemical solution deposition) method.

### Claim 8 (depends on 7)

The method according to claim 7, wherein the CSD method is selected from the group consisting of dip coating, slot die coating, printing ng combinations thereof.

### Claim 9 (depends on 6)

The method according to claim 6, comprising:
removing the ceramic barrier layer by a mechanical route.

### Claim 10 (depends on 9)

The method according to claim 9, wherein the ceramic barrier layer is removed by abrasion with a diamond suspension or by blast cleaning.

### Claim 11 (depends on 10)

The method according to claim 10, wherein the ceramic barrier layer is removed by CMP (chemical-mechanical polishing).

### Claim 12 (depends on 6)

An HTS in ribbon form, obtainable by a method according to claim 6.