# US 10,374,131 B2 · Optoelectronic component with electrically-conductive adhesive layer including titanium oxide and method for producing the optoelectronic component

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- Number: US 10,374,131 B2
- Document ID: US10374131B2
- Status: Granted
- Kind: B2
- Application number: 15/747,728
- Filed: 2016-08-03
- Published: 2018-08-02
- Granted: 2019-08-06
- Earliest claimed: 2015-08-05
- Assignees: OSRAM Opto Semiconductors GmbH
- Applicants: OSRAM Opto Semiconductors GmbH
- Inventors: Julian Ikonomov; Martin Lemberger; Bjoern Muermann
- Web page: https://patentgrep.com/patent/US10374131B2

## CPC

- H10H 20/835: {Reflective materials}
- H10H 20/83: Electrodes
- H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer}
- H10H 20/833: Transparent materials
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/032: {of electrodes}
- H10H 20/034: {of coatings}
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The invention relates to an optoelectronic component. The component includes a semiconductor layer sequence having an active layer that is designed to emit electromagnetic radiation during operation of the component, at least one current-spreading layer on a radiation outlet surface of the semiconductor layer sequence, wherein the current-spreading layer is connected to a contact structure in an electrically conductive manner by means of an adhesion layer. The adhesion layer comprises a titanium oxide, wherein in the titanium oxide the oxygen has the oxidation state W0, with W0=−2, and the titanium has the oxidation state WT, with 0 <WT<+4.

## Claims

### Claim 1

An optoelectronic component, including
a semiconductor layer sequence with an active layer, which is configured to emit electromagnetic radiation during operation of the component,
at least one current expansion layer on a radiation exit surface of the semiconductor layer sequence, wherein the current expansion layer is electrically-conductively connected to a contact structure via an adhesive layer and the adhesive layer includes a titanium oxide, wherein the oxygen in the titanium oxide has the oxidation state W0 with W0=−2 and the titanium has the oxidation state WT with 0<WT<+4, wherein
the contact structure comprises one or multiple metals,
the current expansion layer consists of a transparent, electrically conductive oxide, and
the adhesive layer is in direct contact with the contact structure and the current expansion layer.

### Claim 2 (depends on 1)

The component according to claim 1, wherein the adhesive layer is electrically conductive.

### Claim 3 (depends on 1)

The component according to claim 1, wherein the titanium oxide is selected from a group which includes titanium oxides with titanium in the oxidation state WT=+3 or +2, titanium suboxides and combinations thereof.

### Claim 4 (depends on 3)

The component according to claim 3, wherein the titanium suboxides have the formula TinO2n−1 with n =3-10.

### Claim 5 (depends on 1)

The component according to claim 1, wherein the titanium oxide is selected from a group including Ti2O3, Ti2O, Ti3O, Ti6O, Ti3O5, Ti4O7, Ti5O9, Ti6O11, Ti7O13, Ti8O15, Ti9O17, Ti10O19, and combinations thereof.

### Claim 6 (depends on 1)

The component according to claim 1, wherein the adhesive layer consists of titanium oxide.

### Claim 7 (depends on 1)

The component according to claim 1, wherein the adhesive layer has a layer thickness of between 1 nm and 100 nm.

### Claim 8 (depends on 1)

The component according to claim 1, which includes a substrate of sapphire, onto which the semiconductor layer sequence is epitaxially grown.

### Claim 9 (depends on 8)

The component according to claim 8, which includes a reflective layer arranged on the surface of the substrate facing away from the semiconductor layer sequence.

### Claim 10

A method for producing an optoelectronic component, including the method steps:
A) providing a semiconductor layer sequence with an active layer configured to emit electromagnetic radiation during operation of the component;
B) applying a current expansion layer on to a radiation exit surface of the semiconductor layer sequence;
C) applying an adhesive layeron to the current expansion layer;
D) applying a contact structureon to the current expansion layer; wherein the method step C) includes the following method steps:
C1) vaporization of a titanium oxide, wherein the oxygen in the titanium oxide has the oxidation state W0 with W0=−2 and the titanium has the oxidation state WT with 0<WT<+4, or
C1′) vaporization of titanium while supplying oxygen;
C3) depositing a titanium oxide for forming the adhesive layer (4), wherein the oxygen in the titanium oxide has the oxidation state W0 with W0=−2 and the titanium has the oxidation state WT with 0<WT<+4,
wherein the adhesive layer includes a titanium suboxide with the formula Ti3O or Ti6O or TinO2n−1 with n=3-10.

### Claim 11 (depends on 10)

The method according to claim 10, which includes a further method step C2): C2) Oxidation of the titanium oxide.

### Claim 12

An optoelectronic component, including
a semiconductor layer sequence with an active layer, which is configured to emit electromagnetic radiation during operation of the component,
at least one current expansion layer on a radiation exit surface of the semiconductor layer sequence, wherein the current expansion layer is electrically-conductively connected to a contact structure via an adhesive layer and the adhesive layer includes a titanium suboxide with the formula Ti3O or Ti6O or TinO2n−1 with n=3-10.