# US 10,374,127 B2 · Electronic devices with nanorings, and methods of manufacture thereof

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- Number: US 10,374,127 B2
- Document ID: US10374127B2
- Status: Granted
- Kind: B2
- Application number: 14/856,971
- Filed: 2015-09-17
- Published: 2017-03-23
- Granted: 2019-08-06
- Earliest claimed: 2015-09-17
- Assignees: NXP USA, Inc.
- Applicants: Freescale Semiconductor, Inc.
- Inventors: Nirmal David Theodore
- Web page: https://patentgrep.com/patent/US10374127B2

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- H10F 71/1274: {comprising nitrides, e.g. InGaN or InGaAlN}
- H10F 77/1246: {III-V nitrides, e.g. GaN}
- H10F 77/147: {Shapes of bodies}
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Systems and methods for electronic devices are presented. A device includes a substrate. An Indium Gallium Nitride (InGaN) nanoring is formed over the substrate. The InGaN nanoring includes an alloy of Indium Nitride (InN) and Gallium Nitride (GaN). The alloy includes at least 6 percent Indium. A GaN layer may be formed over the InGaN nanoring, and a first electrode is formed over the GaN layer. In one embodiment, the alloy includes less than about 70 percent Indium.

## Claims

### Claim 1

A device, comprising:
a substrate;
an n-type Gallium Nitride (GaN) layer formed over the substrate;
a plurality of Indium Gallium Nitride (InGaN) nanorings formed over the n-type GaN layer, each InGaN nanoring of the plurality of InGaN nanorings including an alloy of Indium Nitride (InN) and Gallium Nitride (GaN), the alloy including at least 6 percent Indium, each InGaN nanoring of the plurality of InGaN nanorings having a maximum diameter of less than 100 nanometers and a height of less than 20 nanometers;
a p-type GaN layer formed over and around the plurality InGaN nanorings, the p-type GaN layer having a thickness between 10 nanometers and 1000 nanometers, the p-type GaN layer being directly and physically connected between each InGaN nanoring of the plurality of InGaN nanorings and in direct contact with a portion of the n-type GaN layer not covered by the plurality of InGaN nanorings, wherein some portion of the p-type GaN layer is formed under a portion of each InGaN nanoring of the plurality of InGaN nanorings; and
a first electrode formed over the plurality of InGaN nanorings.

### Claim 2 (depends on 1)

The device of claim 1, wherein the first electrode is over the GaN layer.

### Claim 3 (depends on 1)

The device of claim 1, including:
a spin-on-glass layer over the substrate at least partially surrounding the plurality of InGaN nanorings.

### Claim 4 (depends on 3)

The device of claim 3, wherein the first electrode is in contact with the spin-on-glass layer.

### Claim 5 (depends on 1)

The device of claim 1, wherein the first electrode includes a nickel-gold material.

### Claim 6 (depends on 5)

The device of claim 5, wherein the first electrode is at least partially transparent to electromagnetic radiation having a wavelength between 390 nanometers and 700 nanometers.

### Claim 7 (depends on 1)

The device of claim 1, wherein the alloy includes more than 40 percent Indium.

### Claim 8

A device, comprising:
a substrate;
a n-type GaN layer formed over the substrate; and
a plurality of device stacks over the n-type GaN layer, each device stack in the plurality of device stacks including:
a plurality of nanorings formed-over the n-type GaN layer, each nanoring of the plurality of nanorings including an Indium Gallium Nitride (InGaN) material, the InGaN material including at least 6 percent Indium and having a maximum diameter of less than 100 nanometers;
a p-type GaN coating formed on and around each of the plurality of nanorings, the p-type GaN coating being directly and physically connected between each nanoring of the plurality of nanorings and in contact with the n-type GaN layer not covered by each of the plurality of nanorings, wherein some portion of the p-type GaN coating is formed under a portion of each nanoring of the plurality of nanorings; and
a first electrode formed over the plurality of nanorings.

### Claim 9 (depends on 8)

The device of claim 8, wherein the first electrode of each device stack is electrically interconnected by a conductive material.

### Claim 10 (depends on 8)

The device of claim 8, further comprising a second electrode formed over the substrate, the second electrode not being electrically connected to the first electrode of each device stack.

### Claim 11 (depends on 8)

The device of claim 8, wherein each device stack includes a spin-on-glass layer at least partially surrounding the nanoring of each device stack.

### Claim 12 (depends on 8)

The device of claim 8, wherein the first electrode of each device stack is at least partially transparent to electromagnetic radiation having a wavelength between 390 and 700 nanometers.

### Claim 13 (depends on 8)

The device of claim 8, wherein the material includes more than 40 percent Indium.

### Claim 14

A method, comprising:
forming a n-type semiconductor layer over a substrate;
forming a plurality of nanorings over the n-type semiconductor layer, each nanoring of the plurality of nanorings including materials exhibiting a lattice size mismatch with the substrate that exceeds 2 percent;
forming a p-type semiconductor layer over the plurality of nanorings wherein the p-type semiconductor layer is directly and physically connected and between each nanoring of the plurality of nanorings, wherein some portion of the p-type semiconductor layer is formed under a portion of each nanoring of the plurality of nanorings;
forming a first electrode over the plurality of nanorings; and
forming a second electrode on the substrate.

### Claim 15 (depends on 14)

The method of claim 14, wherein forming the nanoring includes using droplet-epitaxy to deposit the materials exhibiting the lattice size mismatch with the substrate onto the substrate.

### Claim 16 (depends on 14)

The method of claim 14, including forming a spin-on glass layer at least partially surrounding the nanoring.

### Claim 17 (depends on 14)

The method of claim 14, wherein the nanoring includes an alloy of Indium Nitride (InN) and Gallium Nitride (GaN), the alloy including at least 6 percent Indium.