# US 10,374,123 B2 · UV light emitting device

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- Number: US 10,374,123 B2
- Document ID: US10374123B2
- Status: Granted
- Kind: B2
- Application number: 15/563,526
- Filed: 2016-03-28
- Published: 2018-03-29
- Granted: 2019-08-06
- Earliest claimed: 2015-03-31
- Assignees: Seoul Viosys Co., Ltd.
- Applicants: Seoul Viosys Co., Ltd.
- Inventors: Chang Seok Han; Woo Chul Kwak; Hyo Shik Choi; Jung Hwan Hwang; Chang Geun Jang
- Web page: https://patentgrep.com/patent/US10374123B2

## CPC

- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/018: {Bonding of wafers}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semi-conductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.

## Claims

### Claim 1

A UV light emitting device comprising:
a first conductive type semiconductor layer;
an anti-cracking layer disposed directly contacting and above the first conductive type semiconductor layer;
an active layer disposed directly contacting and above the anti-cracking layer; and
a second conductive type semiconductor layer disposed directly contacting and above the active layer,
wherein the anti-cracking layer includes first lattice points and second lattice points that are disposed at an interface between the first conductive type semiconductor layer and the anti- cracking layer, and
the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.

### Claim 2 (depends on 1)

The UV light emitting device of claim 1, wherein, at the interface between the first conductive type semiconductor layer and the anti-cracking layer, the anti-cracking layer has a higher density of lattice points per unit area than the first conductive type semiconductor layer.

### Claim 3 (depends on 1)

The UV light emitting device of claim 1, wherein the first conductive type semiconductor layer includes a crack induction portion in which a lattice distance gradually increases in an upward direction.

### Claim 4 (depends on 3)

The UV light emitting device of claim 3, wherein a horizontal lattice distance in an uppermost portion of the crack induction portion is greater than an average horizontal lattice distance in the first conductive type semiconductor layer.

### Claim 5 (depends on 3)

The UV light emitting device of claim 3, wherein at least some of the second lattice points are positioned on the crack induction portion.

### Claim 6 (depends on 1)

The UV light emitting device of claim 1, wherein the anti-cracking layer includes a first layer and a second layer formed under the first layer, wherein the first layer includes a lattice point not connected to any lattices of the second layer at an interface between the first layer and the second layer.

### Claim 7 (depends on 6)

The UV light emitting device of claim 6, wherein the anti-cracking layer has a super lattice structure.

### Claim 8 (depends on 1)

The UV light emitting device of claim 1, wherein each of the first conductive type semiconductor layer and the anti-cracking layer includes a nitride-based semiconductor including one of Al and Ga.

### Claim 9 (depends on 8)

The UV light emitting device of claim 8, wherein the anti-cracking layer further includes indium (In), the active layer has a multi-quantum well structure including barrier layers and well layers, and the barrier layer includes a nitride-based semiconductor including Al, Ga and In.

### Claim 10 (depends on 1)

The UV light emitting device of claim 1, further including:
a growth substrate disposed under the first conductive type semiconductor layer,
wherein the growth substrate has a higher coefficient of thermal expansion than the first conductive type semiconductor layer.

### Claim 11 (depends on 1)

The UV light emitting device of claim 1, further including:
a super lattice layer interposed between the anti-cracking layer and the active layer.

### Claim 12 (depends on 1)

The UV light emitting device of claim 1, further including:
a first electrode disposed under the first conductive type semiconductor layer and electrically connected to the first conductive type semiconductor layer; and
a second electrode disposed on an upper side of the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer.

### Claim 13 (depends on 1)

The UV light emitting device of claim 1, wherein the anti-cracking layer has a thickness of 5 nm to 15 nm.