# US 10,374,122 B2 · Controlling oxygen concentration levels during processing of highly-reflective contacts > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,122 B2 - Document ID: US10374122B2 - Status: Granted - Kind: B2 - Application number: 15/883,174 - Filed: 2018-01-30 - Published: 2018-06-21 - Granted: 2019-08-06 - Earliest claimed: 2014-05-07 - Assignees: Soraa, Inc. - Applicants: Soraa, Inc. - Inventors: Christophe Hurni; Remi Delille - Web page: https://patentgrep.com/patent/US10374122B2 ## CPC - H10H 20/01: Manufacture or treatment - H10H 20/835: {Reflective materials} - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/032: {of electrodes} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Techniques for controlling oxygen concentration levels during annealing of highly-reflective contacts for LED devices together with lamps, LED device and method embodiments thereto are disclosed. ## Claims ### Claim 1 An optoelectronic semiconductor device having a contact prepared by the method comprising: depositing a silver layer on a semiconductor surface of the optoelectronic semiconductor device to define an interface with the semiconductor surface; after the silver layer is deposited, depositing one or more additional layers on the silver layer to form a metallic stack, at least one of the one or more additional layers comprising an oxygen-gettering metal; introducing a predetermined dose of oxygen into the metallic stack; diffusing a portion of the oxygen-gettering metal to the interface; and diffusing a portion of the oxygen to the interface. ### Claim 2 (depends on 1) The device of claim 1, wherein the oxygen-gettering metal is nickel. ### Claim 3 (depends on 1) The device of claim 1, wherein the dose of oxygen is introduced by flowing a controlled amount of oxygen into an annealing chamber during the annealing step. ### Claim 4 (depends on 1) The device of claim 1, wherein the oxygen is introduced by applying an oxygen- containing chemical onto the metallic stack. ### Claim 5 (depends on 1) The device of claim 1, wherein the oxygen is introduced by applying an oxygen- depositing treatment onto the metallic stack. ### Claim 6 (depends on 1) The device of claim 1, wherein the oxygen is introduced during a metal stack deposition step. ### Claim 7 (depends on 1) The device of claim 1, wherein the metallic stack comprises a first silver layer, and at least a nickel layer formed on top of the silver layer. ### Claim 8 (depends on 7) The device of claim 7, further comprising a second silver layer formed on top of the at least one nickel layer. ### Claim 9 (depends on 1) The device of claim 1, further comprising controlling a timing and a rate of release of a controlled amount of the dose of oxygen. ### Claim 10 (depends on 1) The device of claim 1, further comprising depositing a layer of titanium on top of the metal stack. ### Claim 11 (depends on 1) The device of claim 1, wherein the semiconductor comprises a gallium and nitrogen-containing semiconductor material. ### Claim 12 (depends on 1) The device of claim 1, further comprising performing an electrical measurement on the optoelectronic semiconductor device to determine effects of the oxygen dose. ### Claim 13 (depends on 1) The device of claim 1, wherein the fraction of the oxygen-gettering metal and of the oxygen form a metal oxide at the at least one interface. ### Claim 14 (depends on 1) The device of claim 1, wherein the diffusing a portion of the oxygen-gettering metal and diffusing a portion of the oxygen are performed in a single step. ### Claim 15 (depends on 14) The device of claim 14, wherein the single step is an annealing step. ### Claim 16 (depends on 1) The device of claim 1, wherein the diffusing a portion of the oxygen-gettering metal and diffusing a portion of the oxygen and introducing the oxygen are performed in a single step. ### Claim 17 (depends on 1) The device of claim 1, wherein the optoelectronic semiconductor device comprises a gallium and nitrogen-containing semiconductor device; wherein the oxygen-getting metal comprises nickel in a nickel layer; wherein depositing one or more additional layers on the silver layer to form a metallic stack comprises depositing a second silver layer on the nickel layer; and wherein diffusing the oxygen-gettering metal and diffusing the oxygen comprises annealing the device in an oxygen-containing ambient environment to introduce the predetermined dose of oxygen into the optoelectronic semiconductor device and to diffuse a portion of the nickel in the nickel layer and a portion of the oxygen through the silver layer to the interface. ### Claim 18 An optoelectronic semiconductor device having a contact prepared by the method comprising: (a) providing a gallium and nitrogen-containing semiconductor device; after (a), (b) depositing a first silver layer on at least one surface of the semiconductor to define an interface with the semiconductor surface; after (b),(c) depositing a nickel layer on the first silver layer; after (c), (d) depositing a second silver layer on the nickel layer; and after (d),(e) annealing the device in an oxygen-containing ambient environment to introduce a predetermined dose of oxygen into the optoelectronic semiconductor device and to diffuse at least a portion of nickel in the nickel layer and a portion of the oxygen through the first silver layer to the interface. ### Claim 19 A method of preparing reflective and electrically conductive Ag-based contacts on an optoelectronic semiconductor device, comprising: depositing a silver layer on a surface of the semiconductor device to define an interface with the semiconductor surface; depositing a nickel layer comprising nickel on the silver layer; lifting off a portion of the nickel layer and the silver layer using an oxygen-containing solvent; and annealing the device in an oxygen-containing ambient environment to introduce a predetermined dose of oxygen into the optoelectronic semiconductor device and to diffuse at least a portion of the nickel and a portion of the oxygen through the silver layer to the interface. ### Claim 20 (depends on 19) The method of claim 19, wherein the oxygen-containing solvent is acetone. ### Claim 21 (depends on 19) The method of claim 19, wherein the acetone is sprayed on the semiconductor device.