# US 10,374,110 B2 · Transducing apparatus and method for providing such apparatus

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- Number: US 10,374,110 B2
- Document ID: US10374110B2
- Status: Granted
- Kind: B2
- Application number: 15/538,696
- Filed: 2015-11-05
- Published: 2017-12-28
- Granted: 2019-08-06
- Earliest claimed: 2014-12-23
- Assignees: Nokia Technologies Oy
- Applicants: Nokia Technologies Oy
- Inventors: Richard White; Elisabetta Spigone
- Web page: https://patentgrep.com/patent/US10374110B2

## CPC

- H10F 77/1433: {Quantum dots}
- H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D 30/471: {High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]}
- H10D 62/882: {Graphene}
- H10F 30/29: the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F 77/122: comprising only Group IV materials
- H10F 77/1625: {Semiconductor nanoparticles embedded in semiconductor matrix}
- H10F 77/20: Electrodes
- H10K 10/484: {characterised by the channel regions}
- H10N 15/15: {Thermoelectric active materials}
- H10N 30/852: {Composite materials, e.g. having 1-3 or 2-2 type connectivity}
- Y02E 10/547: Monocrystalline silicon PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

An apparatus and method, the apparatus including a charge carrier wherein the charge carrier includes a continuous three dimensional framework including a plurality of cavities throughout the framework; sensor material provided throughout the charge carrier; wherein the sensor material is configured to transduce a detected input and change conductivity of the charge carrier in dependence of the detected input.

## Claims

### Claim 1

An apparatus comprising:
a charge carrier, said charge carrier having a continuous three-dimensional framework with a plurality of cavities distributed throughout, said continuous three-dimensional framework including a plurality of layers of graphene, said continuous three-dimensional framework being formed from a foam of said plurality of layers of graphene, said plurality of cavities being located within said foam; and
sensor material disposed at least within said cavities, the sensor material being capable of detecting an input from outside the charge carrier and of changing a conductivity of the charge carrier in response to the detected input, wherein the sensor material comprises quantum dots.

### Claim 2 (depends on 1)

The apparatus as claimed in claim 1 wherein the continuous three-dimensional framework of the charge carrier is formed from a two-dimensional material, each of said layers of graphene being the two-dimensional material.

### Claim 3 (depends on 2)

The apparatus as claimed in claim 2 wherein the two-dimensional material forms boundaries of the plurality of cavities.

### Claim 4 (depends on 1)

The apparatus as claimed in claim 1 wherein the charge carrier conducts charge in any direction.

### Claim 5 (depends on 1)

The apparatus as claimed in claim 1 wherein the input includes incident electromagnetic radiation.

### Claim 6 (depends on 5)

The apparatus as claimed in claim 5 wherein the incident electromagnetic radiation includes X-rays.

### Claim 7 (depends on 1)

The apparatus as claimed in claim 1 wherein the input includes a change in temperature.

### Claim 8 (depends on 1)

The apparatus as claimed in claim 1 wherein the input includes pressure.

### Claim 9 (depends on 1)

The apparatus as claimed in claim 1 wherein the input includes a change in shape of the sensor material.

### Claim 10 (depends on 1)

The apparatus as claimed in claim 1 wherein the charge carrier is disposed on an insulating substrate.

### Claim 11 (depends on 1)

The apparatus as claimed in claim 1 wherein the charge carrier is disposed between two electrodes.

### Claim 12 (depends on 1)

A transistor comprising the apparatus as claimed in claim 1.

### Claim 13 (depends on 12)

The transistor as claimed in claim 12 wherein the transistor is a thin film transistor.

### Claim 14

A method comprising:
providing a charge carrier, said charge carrier having a continuous three-dimensional framework with a plurality of cavities distributed throughout, said continuous three-dimensional framework including a plurality of layers of graphene, said continuous three-dimensional framework being formed from a foam of said plurality of layers of graphene, said plurality of cavities being located within said foam; and
disposing sensor material at least within said cavities, the sensor material being capable of detecting an input from outside the charge carrier and of changing a conductivity of the charge carrier in response to the detected input, wherein the sensor material comprises quantum dots.