# US 10,374,106 B2 · Integrated graphene detectors with waveguides

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- Number: US 10,374,106 B2
- Document ID: US10374106B2
- Status: Granted
- Kind: B2
- Application number: 15/486,849
- Filed: 2017-04-13
- Published: 2018-10-18
- Granted: 2019-08-06
- Earliest claimed: 2017-04-13
- Assignees: Globalfoundaries Inc.
- Applicants: Globalfoundries Inc.
- Inventors: Ajey P. Jacob
- Web page: https://patentgrep.com/patent/US10374106B2

## CPC

- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- G02B 6/12004: {Combinations of two or more optical elements}
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 39/10: Integrated devices
- H10F 39/107: {having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays}
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 77/148: {Shapes of potential barriers}
- H10F 77/1692: {the films including only Group IV materials}
- G02B 2006/12061: {Silicon}
- G02B 2006/12097: {Ridge, rib or the like}
- G02B 2006/12123: {Diode}
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

The present disclosure relates to semiconductor structures and, more particularly, to graphene detectors integrated with optical waveguide structures and methods of manufacture. The structure includes a plurality of non-planar fin structures composed of substrate material, and a non-planar sheet of graphene material extending entirely over each of the plurality of non-planar fin structures.

## Claims

### Claim 1

A structure, comprising:
a plurality of non-planar fin structures composed of substrate material;
a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures;
a plurality of gate contacts provided over the non-planar fin structures and separated from the non-planar sheet of graphene material by insulator material; and
source and drain contacts in electrical contact with the non-planar sheet of graphene material between the non-planar fin structures.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the non-planar fin structures are silicon based waveguide structures.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the non-planer sheet of graphene material extends over the insulator material between the plurality of non-planar fin structures.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on the substrate material of the plurality of non-planar fin structures.

### Claim 5 (depends on 1)

The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on the insulator material on the plurality of non-planar fin structures.

### Claim 6 (depends on 1)

The structure of claim 1, wherein the non-planar sheet of graphene material is formed directly on a material that has a crystalline structure similar to graphene.

### Claim 7 (depends on 1)

The structure of claim 1, wherein the non-planar sheet of graphene material is one to four sheets thick.

### Claim 8 (depends on 1)

The structure of claim 1, further comprising contacts in electrical contact with the non-planar sheet of graphene material, above a top surface of the plurality of non-planar fin structures.

### Claim 9 (depends on 8)

The structure of claim 8, wherein the contacts are finger contacts extending orthogonal to the he plurality of non-planar fin structures.

### Claim 10 (depends on 8)

The structure of claim 8, wherein the plurality of non-planar fin structures and contacts form a PIN detector.

### Claim 11 (depends on 10)

The structure of claim 10, wherein the PIN detector comprises a boron nitride material and the insulator material between the non-planar sheet of graphene material and the non-planar fin structures.

### Claim 12 (depends on 1)

The structure of claim 1, wherein the insulator material comprises silicon dioxide.

### Claim 13 (depends on 12)

The structure of claim 12, wherein the source and drain contacts comprise doped N++ contacts.

### Claim 14

A structure, comprising:
a plurality of non-planar fin structures composed of substrate material;
a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures;
a plurality of top contacts in direct electrical contact with the non-planar sheet of graphene material using metal vias; and
source and drain contacts in electrical contact with the non-planar sheet of graphene material between the non-planar fin structures.

### Claim 15 (depends on 14)

The structure of claim 14, further comprising a waveguide structure which comprises a monolithic unpatterned portion of the substrate material.