# US 10,374,098 B2 · Semiconductor device

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- Number: US 10,374,098 B2
- Document ID: US10374098B2
- Status: Granted
- Kind: B2
- Application number: 15/782,165
- Filed: 2017-10-12
- Published: 2018-04-26
- Granted: 2019-08-06
- Earliest claimed: 2016-10-21
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Yuta Endo; Hiromi Sawai; Hajime Kimura
- Web page: https://patentgrep.com/patent/US10374098B2

## CPC

- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10B 99/10: {Memory cells having a cross-point geometry}
- H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)}
- H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 62/402: {Amorphous materials}
- H10D 62/86: being Group II-VI materials, e.g. ZnO
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A high-performance and highly reliable semiconductor device is provided. The semiconductor device includes: a first oxide; a source electrode; a drain electrode; a second oxide over the first oxide, the source electrode, and the drain electrode; a gate insulating film over the second oxide; and a gate electrode over the gate insulating film. The source electrode is electrically connected to the first oxide. The drain electrode is electrically connected to the first oxide. Each of the first oxide and the second oxide includes In, an element M (M is Al, Ga, Y, or Sn), and Zn. Each of the first oxide and the second oxide includes more In atoms than element M atoms. An atomic ratio of the In, the Zn, and the element M in the first oxide is equal to or similar to an atomic ratio of the In, the Zn, and the element M in the second oxide.

## Claims

### Claim 1

A semiconductor device comprising:
a first oxide;
a source electrode;
a drain electrode;
a second oxide over the first oxide, the source electrode, and the drain electrode;
a gate insulating film over the second oxide; and
a gate electrode over the gate insulating film,
wherein the second oxide is in contact with a top surface of the first oxide,
wherein the source electrode is electrically connected to the first oxide,
wherein the drain electrode is electrically connected to the first oxide,
wherein each of the first oxide and the second oxide includes In, an element M, and Zn,
wherein the element M is Al, Ga, Y, or Sn,
wherein an atomic ratio of the In, the Zn, and the element M in the first oxide is equal to or similar to an atomic ratio of the In, the Zn, and the element M in the second oxide, and
wherein in each of the first oxide and the second oxide, an atomic proportion of the In is larger than an atomic proportion of the element M.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein a difference between an electron affinity of the first oxide and an electron affinity of the second oxide is greater than or equal to 0 eV and less than or equal to 0.15 eV.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein the second oxide is electrically connected to the source electrode.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, further comprising a third oxide between the second oxide and the gate insulating film,
wherein the third oxide includes In, the element M, and Zn,
wherein in the third oxide, an atomic proportion of the In is larger than an atomic proportion of the element M.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4,
wherein a difference between an electron affinity of the first oxide and an electron affinity of the second oxide is greater than or equal to 0 eV and less than or equal to 0.15 eV,
wherein an electron affinity of the third oxide is smaller than the electron affinity of the second oxide, and
wherein a difference between the electron affinity of the third oxide and the electron affinity of the second oxide is greater than or equal to 0.2 eV and less than or equal to 0.4 eV.

### Claim 6 (depends on 1)

A module comprising:
the semiconductor device according to claim 1; and
a printed circuit board.

### Claim 7 (depends on 6)

An electronic device comprising:
the module according to claim 6; and
a speaker or an operation key.

### Claim 8 (depends on 1)

A semiconductor wafer comprising:
the semiconductor devices according to claim 1; and
a region for dicing.

### Claim 9

A semiconductor device comprising:
a first oxide;
a second oxide over the first oxide;
a source electrode;
a drain electrode;
a third oxide over the second oxide, the source electrode, and the drain electrode;
a gate insulating film over the third oxide; and
a gate electrode over the gate insulating film,
wherein the third oxide is in contact with a top surface of the second oxide,
wherein the source electrode is electrically connected to the second oxide,
wherein the drain electrode is electrically connected to the second oxide,
wherein each of the first oxide, the second oxide, and the third oxide includes In, an element M, and Zn,
wherein the element M is Al, Ga, Y, or Sn,
wherein an atomic ratio of the In, the Zn, and the element M in the second oxide is equal to or similar to an atomic ratio of the In, the Zn, and the element M in the third oxide, and
wherein in each of the second oxide and the third oxide, an atomic proportion of the In is larger than an atomic proportion of the element M.

### Claim 10 (depends on 9)

The semiconductor device according to claim 9,
wherein a difference between an electron affinity of the second oxide and an electron affinity of the third oxide is greater than or equal to 0 eV and less than or equal to 0.15 eV.

### Claim 11 (depends on 9)

The semiconductor device according to claim 9,
wherein the third oxide is electrically connected to the source electrode.

### Claim 12 (depends on 9)

The semiconductor device according to claim 9, further comprising:
a fourth oxide between the third oxide and the gate insulating film;
wherein the fourth oxide includes In, the element M, and Zn, and
wherein in the fourth oxide, an atomic proportion of the element M is larger than an atomic proportion of the In.

### Claim 13 (depends on 12)

The semiconductor device according to claim 12,
wherein a difference between an electron affinity of the second oxide and an electron affinity of the third oxide is greater than or equal to 0 eV and less than or equal to 0.15 eV,
wherein an electron affinity of the fourth oxide is smaller than the electron affinity of the third oxide, and
wherein a difference between the electron affinity of the fourth oxide and the electron affinity of the third oxide is greater than or equal to 0.2 eV and less than or equal to 0.4 eV.

### Claim 14 (depends on 9)

A module comprising:
the semiconductor device according to claim 9; and
a printed circuit board.

### Claim 15 (depends on 14)

An electronic device comprising:
the module according to claim 14; and
a speaker or an operation key.

### Claim 16 (depends on 9)

A semiconductor wafer comprising:
the semiconductor devices according to claim 9; and
a region for dicing.