# US 10,374,074 B2 · Flexible bimodal sensor

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- Number: US 10,374,074 B2
- Document ID: US10374074B2
- Status: Granted
- Kind: B2
- Application number: 15/200,293
- Filed: 2016-07-01
- Published: 2017-01-05
- Granted: 2019-08-06
- Earliest claimed: 2015-07-02
- Assignees: Samsung Electronics Co., Ltd.; Research & Business Foundation Sungkyunkwan University
- Applicants: Samsung Electronics Co., Ltd.; Research & Business Foundation Sungkyunkwan University
- Inventors: Jihyun Bae; Nae-Eung Lee; Doil Kim; Thanh Tien Nguyen; Sunghoon Lee; Sanghun Jeon
- Web page: https://patentgrep.com/patent/US10374074B2

## CPC

- A61B 5/02055: {Simultaneously evaluating both cardiovascular condition and temperature}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- A61B 5/02444: {Details of sensor (A61B5/02427 takes precedence)}
- G01K 7/01: using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence)
- G01K 7/16: using resistive elements
- G01L 9/0051: {using variations in ohmic resistance}
- G01L 9/0098: {using semiconductor body comprising at least one PN junction as detecting element}
- G01L 19/0092: {Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature (G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26)}
- A61B 5/01: Measuring temperature of body parts {; Diagnostic temperature sensing, e.g. for malignant or inflamed tissue} (clinical contact thermometers G01K13/20)
- A61B 5/02108: {from analysis of pulse wave characteristics}
- A61B 5/0245: by using sensing means generating electric signals, {i.e. ECG signals}
- A61B 5/6802: {Sensor mounted on worn items}
- A61B 2562/0247: Pressure sensors
- A61B 2562/0276: comprising a thermosensitive compound
- A61B 2562/028: Microscale sensors, e.g. electromechanical sensors [MEMS]
- A61B 2562/046: in a matrix array
- A61B 2562/125: characterised by the manufacture of electrodes
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G01K: MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR (radiation pyrometry G01J5/00)
- G01L: MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE (weighing G01G)

## Abstract

A flexible bimodal sensor includes a gate electrode; a flexible substrate; a source electrode disposed on the flexible substrate; a drain electrode disposed on the flexible substrate apart from the source electrode; a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode. The drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor.

## Claims

### Claim 1

A flexible bimodal sensor comprising:
a gate electrode;
a flexible substrate;
a source electrode disposed on the flexible substrate;
a drain electrode disposed on the flexible substrate apart from the source electrode;
a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and
a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode and,
wherein the drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor, and
the gate insulating layer comprises a base having a predetermined thickness and the plurality of protrusions extends from a first surface of the base towards the channel layer.

### Claim 2 (depends on 1)

The flexible bimodal sensor of claim 1, wherein the channel layer comprises one of silicon, an organic semiconductor, and a semiconductor oxide.

### Claim 3 (depends on 2)

The flexible bimodal sensor of claim 2, further comprising an encapsulating layer that covers the channel layer and is disposed between the channel layer and the gate insulating layer.

### Claim 4 (depends on 3)

The flexible bimodal sensor of claim 3, wherein the encapsulating layer comprises one of an organic material comprising tetratetracontane (TTC) or methylcycloheane (MCH), an inorganic oxide comprising Al2O3 or HfO2, and a stack structure in which the organic material and the inorganic oxide are stacked.

### Claim 5 (depends on 1)

The flexible bimodal sensor of claim 1, wherein the plurality of protrusions further comprise a plurality of first protrusions formed on a second surface of the base facing the first surface of the base.

### Claim 6 (depends on 4)

The flexible bimodal sensor of claim 4, wherein the gate insulating layer comprises a first material selected from the group consisting of P(VDF_TrFE), P(VDF-TrFE-CFE), P(VDF-TrFE-CtFE), polydimethylsiloxane (PDMS), and polyurethane (PU).

### Claim 7 (depends on 6)

The flexible bimodal sensor of claim 6, wherein the gate insulating layer further comprises inorganic nano-particles distributed in the first material.

### Claim 8 (depends on 1)

The flexible bimodal sensor of claim 1, wherein the plurality of protrusions of the gate insulating layer has a pyramid shape or a truncated pyramid shape.

### Claim 9 (depends on 1)

The flexible bimodal sensor of claim 1, wherein the flexible bimodal sensor includes a plurality of bimodal sensors arranged in a matrix shape on the flexible substrate.

### Claim 10

A flexible bimodal sensor comprising:
a flexible substrate;
a gate electrode disposed on the flexible substrate;
a gate insulating layer covering the gate electrode on the flexible substrate;
a channel layer disposed on the gate insulating layer; and
a source electrode disposed on the channel layer; and
a drain electrode disposed on the channel layer apart from the source electrode;
wherein the gate insulating layer comprises a plurality of protrusions, and
wherein the drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value measured by the flexible bimodal sensor, and
the gate insulating layer comprises a base having a predetermined thickness and the plurality of protrusions extends from a first surface of the base towards the channel layer.

### Claim 11 (depends on 10)

The flexible bimodal sensor of claim 10, wherein the channel layer comprises silicon, an organic semiconductor, or a semiconductor oxide.

### Claim 12 (depends on 11)

The flexible bimodal sensor of claim 11, further comprising an encapsulating layer that covers the channel layer, the drain electrode, and the source electrode.

### Claim 13 (depends on 12)

The flexible bimodal sensor of claim 12, wherein the encapsulating layer comprises one an organic material comprising tetratetracontane (TTC) or methylcycloheane (MCH), an inorganic oxide comprising Al2O3 or HfO2, and a stack structure in which the organic material and the inorganic oxide are stacked.

### Claim 14 (depends on 10)

The flexible bimodal sensor of claim 10, wherein the plurality of protrusions further comprise a plurality of protrusions on a second surface of the base facing the first surface of the base.

### Claim 15 (depends on 13)

The flexible bimodal sensor of claim 13, wherein the gate insulating layer comprises a first material selected from the group consisting of P(VDF_TrFE), P(VDF-TrFE-CFE), P(VDF-TrFE-CtFE), polydimethylsiloxane (PDMS), and polyurethane (PU).

### Claim 16 (depends on 15)

The flexible bimodal sensor of claim 15, wherein the gate insulating layer further comprises inorganic nano-particles distributed in the first material.

### Claim 17 (depends on 10)

The flexible bimodal sensor of claim 10, wherein the plurality of protrusions of the gate insulating layer has a pyramid shape or a truncated pyramid shape.

### Claim 18 (depends on 10)

The flexible bimodal sensor of claim 10, wherein the flexible bimodal sensor includes a plurality of bimodal sensors arranged in a matrix type on the flexible substrate.