# US 10,374,069 B2 · Bipolar transistor and method of manufacturing the same

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- Number: US 10,374,069 B2
- Document ID: US10374069B2
- Status: Granted
- Kind: B2
- Application number: 15/840,890
- Filed: 2017-12-13
- Published: 2018-04-19
- Granted: 2019-08-06
- Earliest claimed: 2016-02-16
- Assignees: STMicroelectronics S.r.l.
- Applicants: STMicroelectronics SA
- Inventors: Pascal Chevalier
- Web page: https://patentgrep.com/patent/US10374069B2

## CPC

- H10D 10/40: Vertical BJTs {(Vertical Heterojunction BJTs H10D10/821)}
- H10D 10/021: {of heterojunction BJTs [HBT]}
- H10D 10/051: {of vertical BJTs (of heterojunction BJTs H10D10/021; of Schottky BJTs H10D10/031; of thin film BJTs H10D10/041)}
- H10D 10/821: {Vertical heterojunction BJTs}
- H10D 62/133: {Emitter regions of BJTs}
- H10D 62/137: {Collector regions of BJTs}
- H10D 62/177: {Base regions of bipolar transistors, e.g. BJTs or IGBTs}
- H10P 50/691: {for Group IV materials or Group III-V materials}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening having sidewalls lined with an insulating sheath. A portion of the insulating sheath adjacent the base region is removed and a base contact region is formed by epitaxial material grown from a portion of the base region exposed by removal of the portion of the insulating sheath.

## Claims

### Claim 1

A bipolar transistor, comprising:
a single-crystal semiconductor substrate;
a doped semiconductor collector region of a first conductivity type resting on the single-crystal semiconductor substrate;
a doped base semiconductor region of a second conductivity type on top of the doped semiconductor collector region;
an insulating sheath coating a side of the doped semiconductor collector region and being aligned with a side of the doped base semiconductor region;
a doped silicon emitter region of the first conductivity type on the base semiconductor region and laterally extending beyond the base semiconductor region; and
a stack surrounding the doped semiconductor collector region and bordering said insulating sheath along an entire height thereof, the stack located on the single-crystal semiconductor substrate and comprising a first insulating layer topped with a first semiconductor layer that is topped with a doped semiconductor base contact region of the second conductivity type laterally extending to a side of the doped base semiconductor region.

### Claim 2 (depends on 1)

The bipolar transistor of claim 1, further comprising silicide portions arranged at a top of the emitter region, at a level of an upper surface of the single-crystal semiconductor substrate and at a level of an upper surface of the base contact region partly opposite the side of the doped base semiconductor region.

### Claim 3 (depends on 1)

The transistor of claim 1, wherein an upper level of the doped semiconductor collector region is lower than or equal to a lower level of the base contact region.

### Claim 4

A bipolar transistor, comprising:
a single-crystal silicon substrate;
a first insulating layer over the single-crystal silicon substrate;
a first silicon layer over the first insulating layer;
an opening extending through the first silicon layer and first insulating layer;
an insulating sheath covering lateral walls of the opening, said insulating sheath including a lateral opening;
in the opening, a collector region made of epitaxial silicon doped with a first conductivity type;
in the opening, a base region made of epitaxial semiconductor material doped with a second conductivity type, said base region in contact with the collector region, wherein a side of the base region is present at the lateral opening in the insulating sheath;
in the opening, an emitter region doped with the first conductivity type, said emitter region in contact with the base region; and
a base contact made of epitaxial silicon extending through the lateral opening in the insulating sheath to connect to both the base region and first silicon layer.

### Claim 5 (depends on 4)

The transistor of claim 4, wherein the first silicon layer is a single-crystal layer of a structure of semiconductor-on-insulator type.

### Claim 6 (depends on 4)

The transistor of claim 4, wherein the first silicon layer has a doping of the second conductivity type.

### Claim 7 (depends on 4)

The transistor of claim 4, further comprising a first silicide on the first silicon layer providing a base terminal, a second silicide on the single-crystal silicon substrate providing a collector terminal and a third silicide on the emitter region providing an emitter terminal.

### Claim 8 (depends on 4)

The transistor of claim 4, further comprising, insulating spacers resting on the base region and bordering the insulating sheath.

### Claim 9

A bipolar transistor, comprising:
a semiconductor region doped with a first conductivity type in a semiconductor substrate;
a first insulating layer over the doped semiconductor collector region;
a first silicon layer over the first insulating layer;
an opening extending through the first silicon layer and the first insulating layer to the semiconductor substrate;
an insulating sheath covering lateral walls of the opening and including a lateral opening;
a collector region made of epitaxial semiconductor material doped with the first conductivity type and located in said opening in contact with the semiconductor region;
a base region made of epitaxial semiconductor material doped with a second conductivity type and located in said opening in contact with the collector region;
an emitter region made of semiconductor material doped with the first conductivity type and located in said opening in contact with the base region; and
a base contact region made of epitaxial semiconductor material extending through the lateral opening to connect the base region to the first silicon layer.

### Claim 10 (depends on 9)

The transistor of claim 9, further comprising:
a first silicide on an upper surface of the first silicon layer; and
a second silicide on an upper surface of the emitter region.

### Claim 11 (depends on 10)

The transistor of claim 10, further comprising a third silicide on an upper surface of the semiconductor region.

### Claim 12 (depends on 9)

The transistor of claim 9, further comprising sidewall spacers in said opening on sidewalls of the insulating sheath and on a top surface of the base region.