# US 10,374,045 B2 · Semiconductor device and electric apparatus using same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,045 B2 - Document ID: US10374045B2 - Status: Granted - Kind: B2 - Application number: 16/064,210 - Filed: 2016-12-21 - Published: 2019-01-03 - Granted: 2019-08-06 - Earliest claimed: 2015-12-25 - Assignees: Idemitsu Kosan Co., Ltd. - Applicants: Idemitsu Kosan Co., Ltd. - Inventors: Yuki Tsuruma; Takashi Sekiya; Shigekazu Tomai; Emi Kawashima; Yoshihiro Ueoka - Web page: https://patentgrep.com/patent/US10374045B2 ## CPC - H10D 62/80: characterised by the materials - H10D 8/60: Schottky-barrier diodes - H10D 30/87: FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] {(FETs having Schottky contact on top of heterojunction gate H10D30/801)} - H10D 62/402: {Amorphous materials} - H10D 62/875: {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)} - H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering - H10P 14/2905: {Silicon, silicon germanium or germanium} - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10D 64/64: Electrodes comprising a Schottky barrier to a semiconductor - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in contact with the ohmic electrode 20 and the Schottky electrode 10, and which satisfies the following formula (I): n < ɛ ⁢ ⁢ V e qL 2 ( I ) in which n is a carrier concentration (cm−3) of the semiconductor layer, ε is a dielectric constant (F/cm) of the semiconductor layer, Ve is a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode. ## Claims ### Claim 1 A semiconductor device which comprises a pair of an ohmic electrode and a Schottky electrode separated from each other, and a semiconductor layer in contact with the ohmic electrode and the Schottky electrode, and which satisfies the following formula (I): n < ɛ ⁢ ⁢ V e qL 2 ( I ) in which n is a carrier concentration (cm−3) of the semiconductor layer, ε is a dielectric constant (F/cm) of the semiconductor layer, Ve is a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor layer consists of a metal oxide. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein the metal oxide comprises one or more elements selected from the group consisting of In, Zn, Ga, Sn and Al. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the Schottky electrode comprises one or more metals selected from the group consisting of Pd, Mo, Pt, Ir, Ru, W, Cr, Re, Te, Mn, Os, Fe, Rh, Co and Ni, and an oxide thereof. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the ohmic electrode comprises one or more metals selected from the group consisting of Ti, Mo, Ag, In, Al, W, Co and Ni, and a compound thereof. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor layer is amorphous or comprises polycrystals. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein a characteristic temperature of the semiconductor layer is 1500K or less. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein when vertical lines are drawn from an outer periphery of a surface of the Schottky electrode toward a surface of the ohmic electrode, the surface of the ohmic electrode is present inside the vertical lines. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein a withstand voltage is 0.5 MV/cm or more. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor layer is interposed between the ohmic electrode and the Schottky electrode. ### Claim 11 (depends on 10) The semiconductor device according to claim 10, which further comprises a conductive silicon substrate, wherein the ohmic electrode or the Schottky electrode contacts with the conductive silicon substrate. ### Claim 12 (depends on 1) The semiconductor device according to claim 1, wherein the ohmic electrode and the Schottky electrode are present, separated from each other, on one surface of the semiconductor layer. ### Claim 13 (depends on 1) A Schottky barrier diode wherein the semiconductor device according to claim 1 is used. ### Claim 14 (depends on 1) A junction transistor wherein the semiconductor device according to claim 1 is used. ### Claim 15 (depends on 1) An electronic circuit wherein the semiconductor device according to claim 1 is used. ### Claim 16 (depends on 15) An electric apparatus, an electronic apparatus, a vehicle or a power engine wherein the electronic circuit according to claim 15 is used. ### Claim 17 (depends on 13) An electronic circuit wherein the Schottky barrier diode according to claim 13 is used. ### Claim 18 (depends on 17) An electric apparatus, an electronic apparatus, a vehicle or a power engine wherein the electronic circuit according to claim 17 is used. ### Claim 19 (depends on 14) An electronic circuit wherein the junction transistor according to claim 14 is used. ### Claim 20 (depends on 19) An electric apparatus, an electronic apparatus, a vehicle or a power engine wherein the electronic circuit according to claim 19 is used.