# US 10,374,016 B2 · Organic photoelectronic device and image sensor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,016 B2 - Document ID: US10374016B2 - Status: Granted - Kind: B2 - Application number: 15/986,956 - Filed: 2018-05-23 - Published: 2018-09-20 - Granted: 2019-08-06 - Earliest claimed: 2015-07-03 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Gae Hwang Lee; Sung Young Yun; Yong Wan Jin - Web page: https://patentgrep.com/patent/US10374016B2 ## CPC - H10K 39/32: Organic image sensors - H10K 30/30: comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains - H10K 30/81: Electrodes - H10K 85/211: {Fullerenes, e.g. C60} - H10K 85/621: {Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide} - H10K 85/633: {comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom} - H10K 85/636: {comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom} - H10K 85/649: {Aromatic compounds comprising a hetero atom} - Y02E 10/549: Organic PV cells - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2). ## Claims ### Claim 1 An organic photoelectronic device, comprising: a first electrode and a second electrode facing each other; and a light-absorption layer between the first electrode and the second electrode, the light-absorption layer including, a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2), wherein the third region includes the p-type semiconductor in a lesser amount than the first region and the second region. ### Claim 2 (depends on 1) The organic photoelectronic device of claim 1, wherein the first composition ratio (p1/n1) is the same as the second composition ratio (p2/n2). ### Claim 3 (depends on 1) The organic photoelectronic device of claim 1, wherein the first composition ratio (p1/n1) is different from the second composition ratio (p2/n2). ### Claim 4 (depends on 1) The organic photoelectronic device of claim 1, wherein a composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor of the light-absorption layer is continuously decreased and then increased along the thickness direction. ### Claim 5 (depends on 1) The organic photoelectronic device of claim 1, wherein a composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor of the light-absorption layer is discontinuously decreased and then increased along the thickness direction. ### Claim 6 (depends on 1) The organic photoelectronic device of claim 1, wherein the light-absorption layer is configured to absorb light in at least one part of a visible ray wavelength region; and a maximum light-absorption position of the light-absorption layer is different depending on the visible ray wavelength region. ### Claim 7 (depends on 6) The organic photoelectronic device of claim 6, wherein the visible ray wavelength region includes first visible light and second visible light having a different wavelength region from the first visible light; the first visible light is absorbed at a maximum in one of the first region and the second region of the light-absorption layer; and the second visible light is absorbed at a maximum in the third region of the light-absorption layer. ### Claim 8 (depends on 7) The organic photoelectronic device of claim 7, wherein one of the p-type semiconductor and the n-type semiconductor is a light-absorbing material configured to selectively absorb the first visible light; and the other of the p-type semiconductor and the n-type semiconductor is a light-absorbing material configured to absorb the first visible light and the second visible light. ### Claim 9 (depends on 8) The organic photoelectronic device of claim 8, wherein the n-type semiconductor is the light-absorbing material configured to selectively absorb the first visible light; the p-type semiconductor is the light-absorbing material configured to absorb the first visible light and the second visible light. ### Claim 10 (depends on 7) The organic photoelectronic device of claim 7, wherein the first visible light has a wavelength region of about 500 nm to about 600 nm; and the second visible light has a wavelength region of greater than or equal to about 380 nm and less than 500 nm. ### Claim 11 (depends on 6) The organic photoelectronic device of claim 6, wherein one of the p-type semiconductor and the n-type semiconductor includes one of C60, C70, a derivative thereof, and a combination thereof. ### Claim 12 (depends on 1) An image sensor comprising: the organic photoelectronic device of claim 1. ### Claim 13 (depends on 12) The image sensor of claim 12, wherein the light-absorption layer is configured to absorb light in at least one part of a visible ray wavelength region; the visible ray wavelength region includes first visible light, second visible light, and third visible light, each of the first, second and third visible light having a different wavelength region; the organic photoelectronic device is configured to selectively absorb the first visible light; and the image sensor further comprises a semiconductor substrate integrated with a plurality of first photo-sensing devices configured to sense the second visible light and a plurality of second photo-sensing devices configured to sense the third visible light. ### Claim 14 (depends on 13) The image sensor of claim 13, wherein the plurality of first photo-sensing devices and the plurality of second photo-sensing devices are spaced apart from each other in a horizontal direction. ### Claim 15 (depends on 14) The image sensor of claim 14, further comprising: a first color filter overlapping the plurality of first photo-sensing devices, the first color filter configured to selectively transmit the second visible light; and a second color filter overlapping the plurality of second photo-sensing devices, the second color filter configured to selectively transmit the third visible light. ### Claim 16 (depends on 13) The image sensor of claim 13, wherein the plurality of first photo-sensing devices and the plurality of second photo-sensing devices are spaced apart from each other in a vertical direction. ### Claim 17 (depends on 12) The image sensor of claim 12, wherein the light-absorption layer is configured to absorb light in at least one part of a visible ray wavelength region; the visible ray wavelength region includes first visible light, second visible light, and third visible light, each of the first, second and third visible light having a different wavelength region; the organic photoelectronic device is a first organic photoelectronic device configured to selectively absorb the first visible light; the image sensor further comprises a second organic photoelectronic device configured to selectively absorb the second visible light and a third organic photoelectronic device configured to selectively absorb the third visible light; and the first organic photoelectronic device, the second organic photoelectronic device, and the third organic photoelectronic device are sequentially stacked. ### Claim 18 (depends on 13) The image sensor of claim 13, wherein the first visible light has a wavelength region of about 500 nm to about 600 nm; the second visible light has a wavelength region of greater than or equal to about 380 nm and less than 500 nm; and the third visible light has a wavelength region of greater than about 600 nm and less than or equal to about 780 nm. ### Claim 19 (depends on 17) The image sensor of claim 17, wherein the first visible light has a wavelength region of about 500 nm to about 600 nm; the second visible light has a wavelength region of greater than or equal to about 380 nm and less than 500 nm; and the third visible light has a wavelength region of greater than about 600 nm and less than or equal to about 780 nm. ### Claim 20 (depends on 12) An electronic device comprising the image sensor of claim 12. ### Claim 21 An organic photoelectronic device comprising: a first electrode; a first light-absorption layer on the first electrode, the first light-absorption layer having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor; a second light-absorption layer on the first light-absorption layer, the second light-absorption layer having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor different from the first composition ratio (p1/n1); a third light-absorption layer on the second light-absorption layer, the third light-absorption layer having the first composition ratio (p1/n1); a second electrode on the third light-absorption layer, wherein the second composition ratio (p2/n2) is less than the first composition ratio (p1/n1), and the second light-absorption layer includes the p-type semiconductor in a lesser amount than the first light-absorption layer and the third light-absorption layer.