# US 10,374,010 B2 · Phase change memory structure and manufacturing method for the same

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- Number: US 10,374,010 B2
- Document ID: US10374010B2
- Status: Granted
- Kind: B2
- Application number: 15/792,370
- Filed: 2017-10-24
- Published: 2019-04-25
- Granted: 2019-08-06
- Earliest claimed: 2017-10-24
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company Ltd.
- Inventors: Jau-Yi Wu
- Web page: https://patentgrep.com/patent/US10374010B2

## CPC

- H10B 63/30: {comprising selection components having three or more electrodes, e.g. transistors}
- G11C 13/0004: {comprising amorphous/crystalline phase transition cells}
- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- H10N 70/8413: {adapted for resistive heating}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- H10N 70/884: {based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883)}
- G11C 2013/008: {Write by generating heat in the surroundings of the memory material, e.g. thermowrite}
- G11C 2213/79: Array wherein the access device being a transistor
- H10B: ELECTRONIC MEMORY DEVICES
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

Present disclosure provides a phase change memory structure, including a transistor region, a phase change material over the transistor region, a heater over the transistor region and in contact with the phase change material, and a dielectric layer surrounding the heater and the phase change material. The heater includes a first material having a first thermal conductivity, the first material disposed at a periphery of the heater, and a second material having a second thermal conductivity greater than the first thermal conductivity, the second material disposed at a center of the heater. Present disclosure also provides a method for manufacturing the phase change memory structure described herein.

## Claims

### Claim 1

A phase change memory structure, comprising:
a transistor region;
a phase change material over the transistor region;
a heater over the transistor region and in contact with the phase change material, the heater comprising:
a first material having a first thermal conductivity, the first material disposed at a periphery of the heater; and
a second material having a second thermal conductivity greater than the first thermal conductivity, the second material disposed at a center of the heater; and
a dielectric layer surrounding the heater and the phase change material,
wherein the phase change material is in direct contact with the second material.

### Claim 2 (depends on 1)

The phase change memory structure of claim 1, wherein the heater is in contact with the phase change material at a first surface comprising the first material and the second material.

### Claim 3 (depends on 2)

The phase change memory structure of claim 2, the heater further comprising a second surface opposite to the first surface, the second surface comprising only the first material.

### Claim 4 (depends on 1)

The phase change memory structure of claim 1, the heater further comprising a third material having a third thermal conductivity lower than the second thermal conductivity, the third material being in contact with the phase change material.

### Claim 5 (depends on 4)

The phase change memory structure of claim 4, wherein the third material comprises graded oxygen derivatives of the first material and the second material.

### Claim 6 (depends on 1)

The phase change memory structure of claim 1, further comprising a fourth material having a fourth thermal conductivity, disposed between the first material and the second material.

### Claim 7 (depends on 6)

The phase change memory structure of claim 6, wherein the first material and the fourth material comprise a superlattice structure.

### Claim 8 (depends on 1)

The phase change memory structure of claim 1, wherein the heater is a bottom electrode.

### Claim 9 (depends on 1)

The phase change memory structure of claim 1, wherein the heater is a top electrode.

### Claim 10 (depends on 1)

The phase change memory structure of claim 1, wherein the heater is a bottom electrode contact.

### Claim 11

A semiconductor device, comprising:
a transistor;
a first metallization layer over the transistor;
a phase change material over the first metallization layer;
a second metallization layer over the phase change material;
a dielectric layer between the first metallization layer and the second metallization layer, surrounding the phase change material; and
a heater in the dielectric layer and in contact with the phase change material; and
wherein the heater comprises a heat insulation shell and a heat conducting core, the heat insulation shell obstructing heat dissipation from the heat conducting core.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, wherein the heat insulation shell and the heat conducting core are both in contact with the phase change material.

### Claim 13 (depends on 11)

The semiconductor device of claim 11, wherein the first metallization layer comprises a bottom electrode for the phase change material and the heater is a contact extending from the bottom electrode to a bottom of the phase change material.

### Claim 14 (depends on 13)

The semiconductor device of claim 13, further comprising a top electrode in contact with the phase change material and being surrounded by the dielectric layer.

### Claim 15 (depends on 13)

The semiconductor device of claim 13, wherein the second metallization layer comprises a top electrode in contact with the phase change material.

### Claim 16 (depends on 11)

The semiconductor device of claim 11, wherein a portion of the heat insulation shell in contact with the phase change material comprises oxynitrides.

### Claim 17 (depends on 11)

The semiconductor device of claim 11, wherein the heat insulation shell comprises superlattice structure.

### Claim 18

A method for manufacturing a phase change memory structure, comprising:
forming a bottom electrode;
forming a dielectric layer over the bottom electrode, the dielectric layer patterned with a contact trench;
depositing a heat insulation layer having an effective first thermal conductivity in a sidewall and a bottom of the contact trench;
filling the contact trench with a heat conductive material having a second thermal conductivity greater than the effective first thermal conductivity;
planarizing the first material, the second material, and the dielectric layer to form a coplanar surface of the first material, the second material, and the dielectric layer;
oxidizing the coplanar surface to obtain oxygen derivatives of the first material and the second material before forming the phase change material; and
forming a phase change material over and in contact with the coplanar surface.

### Claim 19 (depends on 18)

The method of claim 18, wherein the depositing the heat insulation layer comprises forming a superlattice structure.

### Claim 20 (depends on 18)

The method of claim 18, wherein forming the bottom electrode comprises forming a first metallization layer.