# US 10,374,003 B2 · Semiconductor light emitting device and LED module using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,003 B2 - Document ID: US10374003B2 - Status: Granted - Kind: B2 - Application number: 15/850,232 - Filed: 2017-12-21 - Published: 2018-12-06 - Granted: 2019-08-06 - Earliest claimed: 2017-05-30 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Pun Jae Choi; Jacob Chang-Lin Tarn; Han Kyu Seong; Jin Hyuk Song; Yoon Joon Choi - Web page: https://patentgrep.com/patent/US10374003B2 ## CPC - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - F21K 9/232: specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb - F21K 9/235: Details of bases or caps, i.e. the parts that connect the light source to a fitting; Arrangement of components within bases or caps (F21K9/238 takes precedence) - F21K 9/237: Details of housings or cases, i.e. the parts between the light-generating element and the bases; Arrangement of components within housings or cases (F21K9/238 takes precedence) - H10F 30/223: the potential barrier being a PIN barrier - H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies - H10F 77/146: {Superlattices; Multiple quantum well structures} - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies - H10H 20/818: within the light-emitting regions - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/8512: {Wavelength conversion materials} - H10H 20/8514: {characterised by their shape, e.g. plate or foil} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 90/00: Package configurations - F21V 31/005: {Sealing arrangements therefor} - F21Y 2115/10: Light-emitting diodes [LED] - H10H 20/018: {Bonding of wafers} - H10H 20/856: Reflecting means - H10W 90/753: {between laterally-adjacent chips} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - F21K: NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - F21V: FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR - F21Y: INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED ## Abstract A semiconductor light emitting device includes a plurality of light emitting cells having first and second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer therebetween, an insulating layer on the second surface of the plurality of light emitting cells and having first and second openings defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate. ## Claims ### Claim 1 A semiconductor light emitting device, comprising: a plurality of light emitting cells having a first surface and a second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first and second conductivity-type semiconductor layers; an insulating layer on the second surface of the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively; a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells among the plurality of light emitting cells; a transparent support substrate on the first surface of the plurality of light emitting cells; and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate, wherein the plurality of light emitting cells share a single first conductivity-type semiconductor layer, wherein the first conductivity-type semiconductor layer has a hexagonal crystal structure, the first surface being a surface of the first conductivity-type semiconductor layer, and wherein the transparent support substrate has a crystal orientation different from a crystal orientation of the first conductivity-type semiconductor layer. ### Claim 2 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the plurality of light emitting cells have an unevenness portion in the first surface. ### Claim 3 (depends on 1) The semiconductor light emitting device as claimed in claim 1, further comprising a passivation layer on the insulating layer to cover the connection electrode. ### Claim 4 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the transparent bonding layer includes at least one of silicone resin, epoxy resin, polyacrylate, polyimide, polyamide, and benzocyclobutene (BCB). ### Claim 5 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the transparent support substrate is a glass substrate or a sapphire substrate. ### Claim 6 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the transparent support substrate has an unevenness portion on a surface opposite to a surface in contact with the transparent bonding layer. ### Claim 7 A semiconductor light emitting device, comprising: a semiconductor stack having a first surface and a second surface opposite each other, the semiconductor stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first and second conductivity-type semiconductor layers, the first surface and the second surface being defined by the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively, and the semiconductor stack being divided into a plurality of light emitting cells by a mesa region; an insulating layer on the second surface of the semiconductor stack and having a first opening and a second opening defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively; a connection electrode on the insulating layer and connecting a first contact region and a second contact region of different light emitting cells to allow the plurality of light emitting cells to be electrically connected to each other; a transparent bonding layer to cover the first surface of the semiconductor stack; and a transparent support substrate having a first surface bonded to the first surface of the semiconductor stack by the transparent bonding layer and a second surface opposite to the first surface, wherein the mesa region extends only partially through the first conductivity-type semiconductor layer, and wherein a crystal orientation of a first surface of the transparent support substrate that faces the first conductivity-type semiconductor layer is different from a crystal orientation of a first surface of the first conductivity-type semiconductor layer that faces the transparent support substrate. ### Claim 8 (depends on 7) The semiconductor light emitting device as claimed in claim 7, further comprising a reflective layer on the first surface or the second surface of the semiconductor stack. ### Claim 9 (depends on 7) The semiconductor light emitting device as claimed in claim 7, wherein the first contact region of the first conductivity-type semiconductor layer is located toward the second surface of the semiconductor stack. ### Claim 10 (depends on 7) The semiconductor light emitting device as claimed in claim 7, wherein the connection electrode is to allow the plurality of light emitting cells to be connected in series. ### Claim 11 A light emitting diode (LED) module, comprising: a circuit board having a bar shape, in which a first connection terminal and a second connection terminal are on a first surface; at least one LED chip on the first surface of the circuit board, the at least one LED chip being connected to the first connection terminal and the second connection terminal; and a wavelength conversion portion on at least one of the first surface of the circuit board or a second surface of the circuit board opposite the first surface, wherein the at least one LED chip includes: a plurality of light emitting cells having a first surface and a second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first and second conductivity-type semiconductor layers, an insulating layer on the second surface of the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells among the plurality of light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, the transparent support substrate and the circuit board being on opposite surfaces of the at least one LED chip, and a transparent bonding layer disposed between the plurality of light emitting cells and the transparent support substrate, wherein a crystal orientation of a first surface of the transparent support substrate that faces the first conductivity-type semiconductor layer is different from a crystal orientation of a first surface of the first conductivity-type semiconductor layer that faces the transparent support substrate. ### Claim 12 (depends on 11) The LED module as claimed in claim 11, wherein the circuit board and the transparent support substrate include materials having a same composition. ### Claim 13 (depends on 11) The LED module as claimed in claim 11, wherein the plurality of light emitting cells is between the transparent support substrate and the circuit board. ### Claim 14 (depends on 11) The LED module as claimed in claim 11, wherein the circuit board is a transparent substrate. ### Claim 15 (depends on 14) The LED module as claimed in claim 14, wherein the circuit board has an unevenness portion on the second surface. ### Claim 16 (depends on 11) The LED module as claimed in claim 11, wherein the wavelength conversion portion is in a first region of the circuit board including the light emitting diode chip, and the circuit board has a second region in which the wavelength conversion portion is not disposed. ### Claim 17 (depends on 16) The LED module as claimed in claim 16, wherein the region of the circuit board in which the wavelength conversion portion is not disposed is symmetrical in a width direction perpendicular to a length direction of the circuit board.