# US 10,374,002 B2 · Layered structure including thyristor and light-emitting element, light-emitting component, light-emitting device, and image forming apparatus

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- Number: US 10,374,002 B2
- Document ID: US10374002B2
- Status: Granted
- Kind: B2
- Application number: 15/891,385
- Filed: 2018-02-08
- Published: 2018-08-16
- Granted: 2019-08-06
- Earliest claimed: 2017-02-13
- Assignees: Fuji Xerox Co., Ltd.
- Applicants: Fuji Xerox Co., Ltd.
- Inventors: Takashi Kondo
- Web page: https://patentgrep.com/patent/US10374002B2

## CPC

- H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30)
- G03G 15/04054: {by LED arrays}
- G03G 15/04072: {by laser}
- H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)
- H01S 5/0261: {Non-optical elements, e.g. laser driver components, heaters (H01S5/0265 takes precedence)}
- H01S 5/042: Electrical excitation {; Circuits therefor (monolithically integrated laser drive components H01S5/0261)}
- H01S 5/062: by varying the potential of the electrodes (H01S5/065 takes precedence)
- H01S 5/18361: {Structure of the reflectors, e.g. hybrid mirrors}
- H01S 5/187: using Bragg reflection
- H01S 5/2022: {Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes}
- H01S 5/2027: {Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes}
- H01S 5/32: comprising PN junctions, e.g. hetero- or double- heterostructures (H01S5/34, H01S5/36 take precedence)
- H01S 5/34313: {with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H04N 1/02865: {using an array of light sources or a combination of such arrays, e.g. an LED bar}
- H04N 1/40025: {Circuits exciting or modulating particular heads for reproducing continuous tone value scales (H04N1/401, H04N1/407 take precedence)}
- H04N 1/40056: {Circuits for driving or energising particular reading heads or original illumination means (H04N1/401, H04N1/407 take precedence)}
- H05B 45/00: Circuit arrangements for operating light-emitting diodes [LED]
- H05B 45/30: Driver circuits
- H10D 18/01: Manufacture or treatment
- H10D 18/60: Gate-turn-off devices
- H10D 18/65: with turn-off by field effect
- H10D 62/60: Impurity distributions or concentrations
- H10D 62/813: {Quantum wire structures}
- H10D 62/814: {Quantum box structures}
- H10D 62/82: Heterojunctions
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 84/135: {the built-in components being diodes}
- H10F 30/263: {Photothyristors}
- H10H 20/013: {having light-emitting regions comprising only Group III-V materials}
- H10H 20/0133: {with a substrate not being Group III-V materials}
- H10H 20/062: {Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/825: containing nitrogen, e.g. GaN
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3421: {Arsenides}
- H10P 50/646: {of Group III-V materials}
- G03G 15/043: with means for controlling illumination or exposure (G03G15/041 takes precedence)
- G03G 15/18: of a charge pattern
- G03G 2215/0404: Laser
- G03G 2215/0409: Light-emitting diodes, i.e. LED-array
- H01S 5/0421: {characterised by the semiconducting contacting layers (electrodes H01S5/0425)}
- H01S 5/06203: {Transistor-type lasers (H01S5/0608 takes precedence)}
- H01S 5/18313: {by oxidizing at least one of the DBR layers}
- H01S 5/18369: {based on dielectric materials}
- H01S 5/18377: {comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers}
- H01S 5/2059: {by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion}
- H01S 2304/02: MBE
- H01S 2304/04: MOCVD or MOVPE
- H10D 62/85: being Group III-V materials, e.g. GaAs
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10H 20/034: {of coatings}
- H10H 20/832: characterised by their material
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 14/24: using chemical vapour deposition [CVD]
- H10W 90/00: Package configurations
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- G03G: ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A layered structure includes a thyristor and a light-emitting element. The thyristor at least includes four layers. The four layers are an anode layer, a first gate layer, a second gate layer, and a cathode layer arranged in this order. The light-emitting element is disposed such that the light-emitting element and the thyristor are connected in series. The thyristor includes a semiconductor layer having a bandgap energy smaller than bandgap energies of the four layers.

## Claims

### Claim 1

A layered structure comprising:
a thyristor that at least includes four layers, the four layers being an anode layer, a first gate layer, a second gate layer, and a cathode layer arranged in this order; and
a light-emitting element that is disposed such that the light-emitting element and the thyristor are connected in series,
wherein the thyristor includes a semiconductor layer having a bandgap energy smaller than bandgap energies of the four layers,
the light emitting element has a p-type anode layer, a light-emitting layer, and an n-type cathode layer, and
the light-emitting element is a light-emitting diode or a laser element.

### Claim 2 (depends on 1)

The layered structure according to claim 1, wherein
the light-emitting element includes a light-emitting layer, and
the semiconductor layer is a semiconductor layer having a bandgap energy smaller than a bandgap energy of the light-emitting layer.

### Claim 3

A layered structure comprising:
a thyristor that at least includes four layers, the four layers being an anode layer, a first gate layer, a second gate layer, and a cathode layer arranged in this order; and
a light-emitting element that is disposed such that the light-emitting element and the thyristor are connected in series,
wherein the thyristor includes a semiconductor layer having a bandgap energy smaller than bandgap energies of the four layers, and
the semiconductor layer is disposed between the anode layer and the first gate layer.

### Claim 4 (depends on 2)

The layered structure according to claim 2, wherein the semiconductor layer is disposed between the anode layer and the first gate layer.

### Claim 5 (depends on 3)

The layered structure according to claim 3, wherein a gate electrode is disposed on the first gate layer.

### Claim 6 (depends on 4)

The layered structure according to claim 4, wherein a gate electrode is disposed on the first gate layer.

### Claim 7 (depends on 1)

The layered structure according to claim 1, wherein the semiconductor layer is disposed between the second gate layer and the cathode layer.

### Claim 8

A layered structure comprising:
a thyristor that at least includes four layers, the four layers being an anode layer, a first gate layer, a second gate layer, and a cathode layer arranged in this order; and
a light-emitting element that is disposed such that the light-emitting element and the thyristor are connected in series,
wherein the thyristor includes a semiconductor layer having a bandgap energy smaller than bandgap energies of the four layers,
the light-emitting element includes a light-emitting layer,
the semiconductor layer is a semiconductor layer having a bandgap energy smaller than a bandgap energy of the light-emitting layer, and
the semiconductor layer is disposed between the second gate layer and the cathode layer.

### Claim 9 (depends on 7)

The layered structure according to claim 7, wherein a gate electrode is disposed on the second gate layer.

### Claim 10 (depends on 8)

The layered structure according to claim 8, wherein a gate electrode is disposed on the second gate layer.

### Claim 11 (depends on 1)

A light-emitting component comprising:
a plurality of transfer elements that sequentially enter an on-state; and
a plurality of layered structures each connected to a corresponding one of the plurality of transfer elements, each of the plurality of layered structures being the layered structure according to claim 1,
wherein when the plurality of transfer elements sequentially enters the on-state, the thyristors of the plurality of layered structures sequentially become ready to enter the on-state, and when the thyristors of the plurality of layered structures sequentially enter the on-state, the corresponding light-emitting elements of the plurality of layered structures sequentially emit light or increase an amount of emitted light.

### Claim 12 (depends on 11)

A light-emitting device comprising:
the light-emitting component according to claim 11; and
an optical system that emits light emitted from the light-emitting component two-dimensionally.

### Claim 13 (depends on 11)

An image forming apparatus comprising:
an image bearing member;
a charging member that charges the image bearing member;
an exposure device including the light-emitting component according to claim 11, the exposure device being configured to expose the image bearing member to light through an optical system;
a developing member that develops an electrostatic latent image formed on the image bearing member that has been exposed to light by the exposure device; and
a transfer member that transfers an image developed on the image bearing member onto a transferred-image-receiving medium.

### Claim 14 (depends on 1)

The layered structure according to claim 1, wherein the light-emitting element is the laser element.

### Claim 15 (depends on 14)

The layered structure according to claim 14, wherein the laser element is a VCSEL element.

### Claim 16 (depends on 1)

The layered structure according to claim 1, wherein the light-emitting element is the light-emitting diode.

### Claim 17 (depends on 1)

The layered structure according to claim 1, wherein the first gate layer is in contact with the second gate layer.