# US 10,374,001 B2 · Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,374,001 B2 - Document ID: US10374001B2 - Status: Granted - Kind: B2 - Application number: 15/653,281 - Filed: 2017-07-18 - Published: 2017-11-02 - Granted: 2019-08-06 - Earliest claimed: 2009-03-24 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Swarnal Borthakur; Marc Sulfridge - Web page: https://patentgrep.com/patent/US10374001B2 ## CPC - H10F 39/024: {of coatings or optical elements} - H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12} - H10F 39/018: {of hybrid image sensors} - H10F 39/804: {Containers or encapsulations} - H10F 77/334: {for shielding light, e.g. light blocking layers or cold shields for infrared detectors} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 70/65: Shapes or dispositions of interconnections - H10W 72/242: {relative to the surface, e.g. recessed, protruding} - H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu} - H10W 72/29: Bond pads specially adapted therefor - H10W 72/922: {Bond pads being integral with underlying chip-level interconnections} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer. ## Claims ### Claim 1 A method of manufacturing a microelectronic imager having a substrate, an imager sensor located at a first side of the substrate, integrated circuitry coupled to the image sensor, and a bond-pad at the first side of the substrate, the method comprising: forming a redistribution structure having a through-substrate interconnect and a trace electrically coupled to the through-substrate interconnect, the through-substrate interconnect extending from the bond-pad to a second side of the substrate and the trace extending over the second side of the substrate, and the second side of the substrate being opposite the first side of the substrate; disposing a preformed first material over the trace, the preformed first material including a non-photoreactive radiation blocking material; shaping the first material to conform to the redistribution structure; disposing a second material on the preformed first material, the second material including a photoreactive material; forming an aperture in the second material, the aperture being generally in alignment with the trace; and forming an opening in the preformed first material through the aperture to expose a portion of the trace. ### Claim 2 (depends on 1) The method of claim 1 wherein: the preformed first material is a first preformed sheet having a first thickness and the second material is a second preformed sheet laminated to the first preformed sheet, the first and second preformed sheets forming a laminated bi-layer structure before disposing the preformed first material over the trace; disposing the preformed first material over the trace comprises placing the laminated bi-layer structure on the redistribution structure under a vacuum with the first preformed sheet below the second preformed sheet and releasing the vacuum to conform the laminated bi-layer structure to the topography of the redistribution structure; and forming the aperture in the second material comprises exposing the second preformed sheet to a pattern of radiation energy and developing the second preformed sheet thereby forming the aperture in the second preformed sheet through which the opening is etched in the preformed first material. ### Claim 3 (depends on 1) The method of claim 1 wherein the preformed first material comprises a first preformed sheet of an IR blocking material having a first thickness and the second material comprises a second preformed sheet, and wherein the method further comprises laminating the first and second preformed sheets together before disposing the preformed first material over the trace. ### Claim 4 (depends on 3) The method of claim 3 wherein the first preformed sheet comprises a carbon black material and the second preformed sheet comprises a dry resist. ### Claim 5 (depends on 1) The method of claim 1 wherein the preformed first material comprises a first preformed sheet of an IR blocking material and the method further comprises forming a laminated bi-layer structure by disposing the second material onto the first performed sheet. ### Claim 6 (depends on 5) The method of claim 5 wherein the second material comprises a dry resist and disposing the second material onto the first preformed sheet comprises depositing the dry resist on the first preformed sheet. ### Claim 7 (depends on 6) The method of claim 6 wherein the dry resist is deposited onto the first performed sheet before disposing the preformed first material over the trace. ### Claim 8 (depends on 1) The method of claim 1 wherein disposing the preformed first material over the trace comprises depositing a conformal layer of IR blocking material over the second side of the substrate. ### Claim 9 (depends on 1) The method of claim 1 wherein the preformed first material comprises a first preformed sheet of a carbon black material and the second material comprises a second preformed sheet of a dry resist, and wherein the method further comprises laminating the first and second preformed sheets together before disposing the preformed first material over the trace. ### Claim 10 (depends on 1) The method of claim 1, further comprising disposing the second material on the preformed first material via a spin-on process. ### Claim 11 (depends on 1) The method of claim 1, further comprising: forming the aperture in the second material by drying etching the second material. ### Claim 12 (depends on 1) The method of claim 1, further comprising: forming the opening in the preformed first material through the aperture by drying etching the preformed first material through the aperture. ### Claim 13 (depends on 1) The method of claim 1, further comprising: selecting a thickness of at least one of the first and second materials such that a target thickness of both the first and second materials remain on the second side of the substrate after exposing the portion of the trace.