# US 10,373,993 B2 · Solid-state image pickup apparatus, and image pickup system using solid-state image pickup apparatus having metal film with first and second portion > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,373,993 B2 - Document ID: US10373993B2 - Status: Granted - Kind: B2 - Application number: 15/861,350 - Filed: 2018-01-03 - Published: 2018-05-10 - Granted: 2019-08-06 - Earliest claimed: 2011-05-27 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Masahiro Kobayashi; Yuichiro Yamashita; Yusuke Onuki - Web page: https://patentgrep.com/patent/US10373993B2 ## CPC - H01L 27/14623 - H01L 27/14603 - H01L 27/14609 - H01L 27/14612 - H01L 27/14614 - H01L 27/14643 - H04N 5/374 - H01L - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate. ## Claims ### Claim 1 A solid-state image pickup apparatus comprising: a photoelectric conversion unit disposed in a semiconductor substrate; a first transfer transistor configured to transfer carriers generated in the photoelectric conversion unit; a charge storage unit configured to store the carriers transferred from the photoelectric conversion unit; a second transfer transistor configured to transfer the carriers in the charge storage unit to a floating diffusion unit; and a metal film having a first portion disposed over a second gate electrode of the second transfer transistor and a second portion disposed between a first gate electrode of the first transfer transistor and the second gate electrode, wherein the first portion has an opening. ### Claim 2 (depends on 1) The solid-state image pickup apparatus according to claim 1, further comprising a contact plug, wherein the contact plug is provided inside of the opening in a planar view. ### Claim 3 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the first portion is disposed over the first gate electrode. ### Claim 4 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the first portion is disposed over the first gate electrode, and wherein the first portion overlaps an edge of the first gate electrode at a side of the photoelectric conversion unit in a planer view. ### Claim 5 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the metal film is formed of tungsten. ### Claim 6 (depends on 2) The solid-state image pickup apparatus according to claim 2, further comprising a plurality of wiring layers, wherein the metal film is located closer to a surface of the semiconductor substrate than a top surface of the contact plug. ### Claim 7 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the metal film has an upper face, the upper face being substantially flat. ### Claim 8 (depends on 1) The solid-state image pickup apparatus according to claim 1, further comprising an element isolation region, wherein the metal film covers a part of the element isolation region. ### Claim 9 (depends on 6) The solid-state image pickup apparatus according to claim 6, further comprising another photoelectric conversion unit, another charge storage unit, another first gate electrode, and another second gate electrode, wherein the metal film extends over the another first gate electrode. ### Claim 10 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the first gate electrode covers approximately over a whole area of the charge storage unit. ### Claim 11 (depends on 9) The solid-state image pickup apparatus according to claim 9, wherein the first gate electrode is disposed between the photoelectric conversion unit and the charge storage unit. ### Claim 12 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the first gate electrode is disposed on the photoelectric conversion unit. ### Claim 13 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the first portion is disposed on the second gate electrode. ### Claim 14 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the first portion overlaps an edge of the first gate electrode at a side of the charge storage unit. ### Claim 15 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the second portion extends from the first portion toward a surface of the semiconductor substrate. ### Claim 16 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the first portion is disposed over the charge storage unit. ### Claim 17 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein the first portion is disposed over the photoelectric conversion unit. ### Claim 18 (depends on 7) The solid-state image pickup apparatus according to claim 7, wherein the first gate electrode extends over the charge storage unit. ### Claim 19 (depends on 7) The solid-state image pickup apparatus according to claim 7, wherein the first gate electrode has a first part disposed on the charge storage unit and a second part not disposed on the charge storage unit. ### Claim 20 (depends on 1) The solid-state image pickup apparatus according to claim 1, wherein a bottom surface of the second portion is located closer to a surface of the semiconductor substrate than a bottom surface of the first portion. ### Claim 21 (depends on 6) The solid-state image pickup apparatus according to claim 6, wherein the first portion overlaps an edge of the first gate electrode at a side of the charge storage unit. ### Claim 22 (depends on 21) The solid-state image pickup apparatus according to claim 21, wherein the first gate electrode is disposed on the charge storage unit. ### Claim 23 (depends on 22) The solid-state image pickup apparatus according to claim 22, wherein the first portion is disposed over the first portion and the second portion, and wherein the second portion extends from the first portion toward a surface of the semiconductor substrate. ### Claim 24 (depends on 1) An image pickup system comprising: the solid-state image pickup apparatus according to claim 1, and a processing unit that processes a signal output from the solid-state image pickup apparatus.