# US 10,373,991 B2 · Imaging device, operating method thereof, and electronic device

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- Number: US 10,373,991 B2
- Document ID: US10373991B2
- Status: Granted
- Kind: B2
- Application number: 15/230,727
- Filed: 2016-08-08
- Published: 2017-02-23
- Granted: 2019-08-06
- Earliest claimed: 2015-08-19
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Takuro Ohmaru; Naoto Kusumoto; Kentaro Hayashi
- Web page: https://patentgrep.com/patent/US10373991B2

## CPC

- H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N 23/667: Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
- H04N 25/46: by combining or binning pixels
- H04N 25/703: SSIS architectures incorporating pixels for producing signals other than image signals
- H04N 25/705: Pixels for depth measurement, e.g. RGBZ
- H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery}
- H10F 39/80377: {characterised by the channel of the transistor, e.g. channel having a doping gradient}
- H10F 39/022: {of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

## Claims

### Claim 1

An imaging device comprising:
a first photoelectric conversion element;
a second photoelectric conversion element;
a first transistor;
a second transistor;
a third transistor;
a fourth transistor; and
a fifth transistor,
wherein each of the first transistor and the second transistor is n-channel transistor,
wherein a cathode of the first photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,
wherein an anode of the second photoelectric conversion element is electrically connected to one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the third transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the fourth transistor, and
wherein one of a source and a drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor.

### Claim 2 (depends on 1)

The imaging device according to claim 1,
wherein the first to third transistors each comprise an oxide semiconductor in an active layer, and
wherein the oxide semiconductor contains In, Zn, and M, where M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

### Claim 3 (depends on 1)

The imaging device according to claim 1, wherein the first photoelectric conversion element and the second photoelectric conversion element each contain a material containing selenium.

### Claim 4 (depends on 1)

The imaging device according to claim 1, further comprising a capacitor, wherein one terminal of the capacitor is electrically connected to the other of the source and the drain of the first transistor.

### Claim 5 (depends on 1)

An electronic device comprising:
the imaging device according to claim 1; and
a display device.

### Claim 6

An imaging device comprising:
a first photoelectric conversion element;
a second photoelectric conversion element;
a first transistor;
a second transistor;
a third transistor;
a fourth transistor; and
a fifth transistor,
wherein a cathode of the first photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,
wherein an anode of the second photoelectric conversion element is electrically connected to one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the third transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the fourth transistor,
wherein one of a source and a drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor,
wherein each of the first to third transistors comprises an oxide semiconductor in an active layer, and
wherein a first signal which is input to a gate of the first transistor is different from a second signal which is input to a gate of the second transistor.

### Claim 7 (depends on 6)

The imaging device according to claim 6, wherein the oxide semiconductor in the first to third transistors comprises In and Zn.

### Claim 8 (depends on 6)

The imaging device according to claim 6, wherein the first photoelectric conversion element and the second photoelectric conversion element each contain a material containing selenium.

### Claim 9 (depends on 6)

The imaging device according to claim 6, further comprising a capacitor, wherein one terminal of the capacitor is electrically connected to the other of the source and the drain of the first transistor.

### Claim 10 (depends on 6)

An electronic device comprising:
the imaging device according to claim 6; and
a display device.

### Claim 11 (depends on 1)

The imaging device according to claim 1, wherein a first signal which is input to a gate of the first transistor is different from a second signal which is input to a gate of the second transistor.