# US 10,373,982 B2 · Semiconductor device

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- Number: US 10,373,982 B2
- Document ID: US10373982B2
- Status: Granted
- Kind: B2
- Application number: 15/619,677
- Filed: 2017-06-12
- Published: 2017-12-21
- Granted: 2019-08-06
- Earliest claimed: 2016-06-20
- Assignees: Japan Display Inc.
- Applicants: Japan Display Inc.
- Inventors: Toshinari Sasaki; Hajime Watakabe; Akihiro Hanada; Marina Shiokawa
- Web page: https://patentgrep.com/patent/US10373982B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes a oxide semiconductor layer, a gate electrode arranged above the oxide semiconductor layer, a gate insulation layer between the oxide semiconductor layer and the gate electrode, a first insulation layer arranged above the oxide semiconductor layer and arranged with a first aperture part, wiring including an aluminum layer arranged above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part, a barrier layer including aluminum oxide above the first insulation layer, above the wiring and covering a side surface of the wiring, and an organic insulation layer arranged above the barrier layer.

## Claims

### Claim 1

A semiconductor device comprising:
an oxide semiconductor layer;
a gate electrode above the oxide semiconductor layer;
a gate insulation layer between the oxide semiconductor layer and the gate electrode;
a first insulation layer above the oxide semiconductor layer, the first insulation layer having a first aperture part;
a wiring including an aluminum layer above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part;
a barrier layer including aluminum oxide, the barrier layer covering above the first insulation layer, above the wiring and side of the wiring; and
an organic insulation layer above the barrier layer,
wherein
the barrier layer contacts the wiring above the wiring and side of the wiring,
the aluminum layer includes an oxygen doped region in a barrier layer side of the aluminum layer,
the wiring includes a first conducting layer and a second conducting layer,
the aluminum layer and the oxygen doped region are arranged between the first conducting layer and the second conducting layer, and
Ar is doped into the oxygen doped region.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a first electrode above the organic insulation layer;
a second electrode opposing the first electrode and electrically connected to the wiring via a second aperture part arranged in the organic insulation layer; and
a second insulation layer electrically insulating the first electrode and the second electrode and exposing the second aperture part and an upper surface of the organic insulation layer.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein transmittance of the barrier layer to water, hydrogen or ammonia is lower than transmittance of the second insulation layer to water, hydrogen or ammonia.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2, wherein the second electrode covers an upper surface of the organic insulation layer exposed by the second aperture part.

### Claim 5 (depends on 2)

The semiconductor device according to claim 2, wherein a part of an upper surface of the organic insulation layer is exposed from the second electrode and the second insulation layer.