# US 10,373,969 B2 · Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereof

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- Number: US 10,373,969 B2
- Document ID: US10373969B2
- Status: Granted
- Kind: B2
- Application number: 15/865,892
- Filed: 2018-01-09
- Published: 2019-07-11
- Granted: 2019-08-06
- Earliest claimed: 2018-01-09
- Assignees: SanDisk Technologies LLC
- Applicants: Sandisk Technologies LLC
- Inventors: Yanli Zhang; Peng Zhang; Johann Alsmeier; Yingda Dong
- Web page: https://patentgrep.com/patent/US10373969B2

## CPC

- H10B 43/35: with cell select transistors, e.g. NAND
- G11C 11/5628: {Programming or writing circuits; Data input circuits}
- G11C 16/0466: {comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] (G11C16/0483, G11C16/0491 take precedence)}
- G11C 16/0483: {comprising cells having several storage transistors connected in series}
- G11C 16/10: Programming or data input circuits
- G11C 16/3427: {Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written}
- H10B 43/10: characterised by the top-view layout
- H10B 43/20: characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/40: characterised by the peripheral circuit region
- H10B 43/50: characterised by the boundary region between the core and peripheral circuit regions
- H10B: ELECTRONIC MEMORY DEVICES
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A method of operating a three-dimensional memory device includes applying a target string bias voltage to a selected drain select gate electrode which partially surrounds a row of memory stack structures that directly contact a drain select isolation structure, and applying a neighboring string bias voltage that has a greater magnitude than the target string bias voltage to an unselected drain select gate electrode that contacts the drain select level isolation structure.

## Claims

### Claim 1

A method of operating a three-dimensional memory device comprising a stack of alternating insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the stack in a vertical direction perpendicular to the layers and the substrate, wherein:
each of the memory stack structures comprises a memory film that surrounds a vertical semiconductor channel;
the electrically conductive layers comprise drain select gate electrode layers located over word line electrically conductive layers;
the memory stack structures are arranged in multiple groups that are spaced apart from each other in a horizontal direction by drain select level isolation structures that each extend in the vertical direction through the drain select gate electrode layers dividing each drain select gate electrode layer into horizontal drain select gate electrode layer sections;
within each group of memory stack structures, at least one row of memory stack structures is arranged, each of the memory stack structures in the at least one row is only partially surrounded by a respective drain select gate electrode layer section due to each of the memory stack structures in the at least one row also directly contacting a respective one of the drain select level isolation structures;
applying a target string bias voltage to a selected drain select gate electrode layer section, which partially surrounds a first row of memory stack structures in a respective group of memory stack structures, wherein each of the memory stack structures of the first row is in direct contact with a first one of the drain select isolation structures; and
applying a neighboring string bias voltage, which has a greater magnitude than the target string bias voltage, to a first unselected drain select gate electrode layer section that neighbors the selected drain gate electrode layer section and contacts the first one of the drain select level isolation structures.

### Claim 2 (depends on 1)

The method of claim 1, wherein:
a selected memory stack structure is located in the first row of memory stack structures, and directly contacts the first one of the drain select isolation structures;
the selected memory stack structure is located in a selected group of the multiple groups;
the first unselected drain select gate electrode layer section is located in a first neighboring group that is adjacent to the selected group and that is separated from the selected group by the first one of the drain select isolation structures;
the selected drain select gate electrode layer section partially surrounds the selected memory stack structure in a drain select level;
electrical charge is injected into a first portion of a memory film in the selected memory stack structure that contacts the selected drain select gate electrode layer section by the target string bias voltage; and
electrical charge is injected into a second portion of the memory film in the select memory stack structure that contacts the first one of the drain select isolation structures by the neighboring string bias voltage.

### Claim 3 (depends on 2)

The method of claim 2, further comprising:
applying a pass bias voltage to a second unselected drain select gate electrode layer section that is laterally spaced from the selected drain select gate electrode layer section by at least the first neighboring group; and
applying a programming drain bias voltage to a drain region which contacts a vertical semiconductor channel within the selected memory stack structure,
wherein the neighboring string bias voltage greater than the pass bias voltage.

### Claim 4 (depends on 3)

The method of claim 3, wherein:
the neighboring string bias voltage is in a range from 101% to 150% of the target string bias voltage; and
the pass bias voltage is in a range from 20% to 50% of the target string bias voltage.

### Claim 5 (depends on 3)

The method of claim 3, wherein:
the target string bias voltage is in a range from 9 V to 30 V;
the neighboring string bias voltage is in a range from 9.5 V to 45 V;
the pass bias voltage is in a range from 3 V to 22.5 V; and
the programming drain bias voltage is in a range from −1 V to 2 V.

### Claim 6 (depends on 2)

The method of claim 2, wherein the three-dimensional memory device further comprises:
drain regions contacting a top end of a respective one of the vertical semiconductor channels; and
bit lines that are electrically shorted to a respective subset of the drain regions such that each bit line is electrically shorted to only one drain region per each neighboring pair of strings groups, and each bit line is electrically shorted to more than one drain region in each memory block.

### Claim 7 (depends on 6)

The method of claim 6, further comprising applying a neighboring string inhibit voltage to each bit line electrically connected to vertical semiconductor channels that pass through the first unselected drain select gate electrode layer section during charge injection into the memory film of the selected memory stack structure, wherein a voltage difference between the neighboring string inhibit voltage and the pass bias voltage is less than a critical voltage that induces charge tunneling through memory films within the memory stack structures.

### Claim 8 (depends on 7)

The method of claim 7, wherein:
the selected drain select gate electrode layer section contacts a second one of the drain select level isolation structures;
an additional first unselected drain select gate electrode layer section contacts the second one of the drain select level isolation structures; and
the method further comprises applying the neighboring string inhibit voltage to each bit line electrically connected to vertical semiconductor channels that pass through the additional first unselected drain select gate electrode layer section during charge injection into the memory film within the selected memory stack structure.

### Claim 9 (depends on 7)

The method of claim 7, further comprising applying a selected string inhibit voltage to each bit line connected to vertical semiconductor channels of unselected memory stack structures that pass through the selected drain select gate electrode layer section, wherein the selected string inhibit voltage is greater than the programming drain bias voltage and prevents charge tunneling within the unselected memory stack structures.

### Claim 10 (depends on 7)

The method of claim 7, further comprising applying the programming drain bias voltage each bit line connected to vertical semiconductor channels of additional memory stack structures that pass through the selected drain select gate electrode layer section.

### Claim 11 (depends on 2)

The method of claim 2, wherein charge trapping is induced within the portions of the memory film in the selected memory stack structure that are located at the drain select level while word line electrically conductive layers among the electrically conductive layers are electrically biased at a voltage that does not induce charge tunneling through the memory film in the selected memory stack structure.

### Claim 12 (depends on 11)

The method of claim 11, further comprising storing electrical charges in memory elements within the memory film in the selected memory stack structure in a subsequent programming operation or reading electrical charges in memory elements within the memory film in the selected memory stack structure in a subsequent reading operation.

### Claim 13 (depends on 1)

The method of claim 1, wherein:
the three-dimensional memory device further comprises a pair of dielectric material portions that laterally extend along an additional horizontal direction and that are located on either side of the stack to separate a selected memory block containing the selected memory group and the neighboring memory group from adjacent memory blocks;
the word line electrically conductive layers laterally extend in the selected memory block between the pair of dielectric material portions;
the drain select level isolation structures are located in the selected memory block between the pair of dielectric material portions; and
the drain select level isolation structures laterally separate drain select gate electrode layer sections and the multiple strings groups, but do not separate the word line electrically conductive layers.

### Claim 14 (depends on 13)

The method of claim 13, wherein:
each of the drain select level isolation structures laterally extends along the additional horizontal direction and includes a pair of lengthwise sidewalls;
each of the pair of lengthwise sidewalls includes an alternating sequence of planar sidewalls and concave vertical sidewalls; and
each of the concave vertical sidewalls directly contacts a respective one of the memory stack structures.

### Claim 15 (depends on 1)

The method of claim 1, wherein:
the target string bias voltage is applied as multiple pulses to the selected drain select gate electrode layer section; and
the neighboring string bias voltage is applied as multiple pulses to the first unselected drain select gate electrode layer section.

### Claim 16 (depends on 1)

The method of claim 1, wherein:
the three-dimensional memory device comprises a monolithic three-dimensional NAND memory device;
the electrically conductive layers comprise, or are electrically connected to, a respective word line of the monolithic three-dimensional NAND memory device;
the substrate comprises a silicon substrate;
the monolithic three-dimensional NAND memory device comprises an array of monolithic three-dimensional NAND strings over the silicon substrate;
at least one memory cell in a first device level of the array of monolithic three-dimensional NAND strings is located over another memory cell in a second device level of the array of monolithic three-dimensional NAND strings;
the silicon substrate contains an integrated circuit comprising a driver circuit for the memory device located thereon;
the word line electrically conductive layers comprise a plurality of control gate electrodes having a strip shape extending substantially parallel to the top surface of the substrate, the plurality of control gate electrodes comprise at least a first control gate electrode located in the first device level and a second control gate electrode located in the second device level; and
the array of monolithic three-dimensional NAND strings comprises:
a plurality of semiconductor channels, wherein at least one end portion of each of the plurality of semiconductor channels extends substantially perpendicular to a top surface of the substrate, and
a plurality of charge storage elements, each charge storage element located adjacent to a respective one of the plurality of semiconductor channels.

### Claim 17

A three-dimensional memory device, comprising:
a stack of alternating insulating layers and electrically conductive layers located over a substrate, wherein the electrically conductive layers comprise drain select gate electrode layers located over word line electrically conductive layers;
memory stack structures extending through the stack in a vertical direction perpendicular to the layers and the substrate, wherein each of the memory stack structures comprises a memory film that surrounds a vertical semiconductor channel, the memory stack structures are arranged in multiple groups that are spaced apart from each other in a horizontal direction by drain select level isolation structures that each extend in the vertical direction through the drain select gate electrode layers dividing each of the drain select gate electrode layers into horizontal drain select gate electrode layer sections, and within each group of memory stack structures, at least one row of memory stack structures is arranged, each of the memory stack structures in the at least one row is only partially surrounded by a respective drain select gate electrode layer section due to each of the memory stack structures in the at least one row also directly contacting a respective one of the drain select level isolation structures; drain regions contacting a top end of a respective one of the vertical semiconductor channels; and
bit lines that are electrically shorted to a respective subset of the drain regions such that each bit line is electrically shorted to only one drain region per each neighboring pair of groups of memory stack structures, and each bit line is electrically shorted to more than one drain region in a first memory block.

### Claim 18 (depends on 17)

The three-dimensional memory device of claim 17, further comprising a pair of dielectric material portions that laterally extend along an additional horizontal direction and that are located on either side of the stack to separate the first memory block from adjacent memory blocks.

### Claim 19 (depends on 18)

The three-dimensional memory device of claim 18, wherein:
each bit line is electrically shorted to two drain regions in the first memory block;
the word line electrically conductive layers laterally extend in the first memory block between the pair of dielectric material portions;
the drain select level isolation structures are located in the first memory block between the pair of dielectric material portions;
the drain select level isolation structures laterally extend along the additional horizontal direction and laterally separate drain select gate electrode layer sections and the multiple groups, but do not separate the word line electrically conductive layers;
at least one row of memory stack structures directly contacts a respective one of the drain select level isolation structures in each of the multiple groups;
each of the drain select level isolation structures includes a pair of lengthwise sidewalls;
each of the pair of lengthwise sidewalls includes an alternating sequence of planar sidewalls and concave vertical sidewalls; and
each of the concave vertical sidewalls directly contacts a respective one of the memory stack structures.

### Claim 20

A three-dimensional memory device, comprising:
a stack of alternating insulating layers and electrically conductive layers located over a substrate, wherein the electrically conductive layers comprise drain select gate electrode layers located over word line electrically conductive layers;
memory stack structures extending through the stack in a vertical direction perpendicular to the layers and the substrate, wherein each of the memory stack structures comprises a memory film that surrounds a vertical semiconductor channel, wherein the memory stack structures are arranged in multiple groups that are spaced apart from each other in a horizontal direction by drain select level isolation structures that each extend in the vertical direction through the drain select gate electrode layers dividing each drain select gate electrode layer into drain select gate electrode layer sections, and wherein
at least one row of memory stack structures is arranged, each of the memory stack structures in the at least one row is only partially surrounded by a respective drain select gate electrode layer section due to each of the memory stack structures in the at least one row also directly contacting a respective one of the drain select level isolation structures; and
a control circuitry configured to provide charge injection into the memory films at the level of the drain select gate electrode layers, wherein the control circuitry comprises:
a target string bias voltage supply circuitry configured to generate a target string bias voltage; a neighboring string bias voltage supply circuitry configured to generate a neighboring string bias voltage;
a pass bias voltage supply circuitry configured to generate a pass bias voltage, wherein the neighboring string bias voltage is different from the pass bias voltage;
a programming drain bias voltage circuitry configured to generate a programming drain bias voltage; and
an address decoder and a switch circuitry that are configured:
to apply the target string bias voltage to a selected drain select gate electrode layer section, which partially surrounds a first row of memory stack structures in a respective group of memory stack structures, wherein each of the memory stack structures of the first row is in direct contact with a first one of the drain select isolation structures;
to apply the neighboring string bias voltage to a first unselected drain select gate electrode layer section that that neighbors the selected drain select gate electrode layer section and contacts a first one of the drain select level isolation structures;
to apply the pass bias voltage to a second unselected drain select gate electrode layer section that is spaced from the selected drain select gate electrode layer section in the horizontal direction by the at least one select gate electrode layer section; and
to apply the programming drain bias voltage to a vertical semiconductor channel within a selected memory stack structure at least partially laterally surrounded by the selected drain select gate electrode layer section.

### Claim 21 (depends on 20)

The three-dimensional memory device of claim 20, wherein:
the neighboring string bias voltage is in a range from 101% to 150% of the programming bias voltage; and
the pass bias voltage is in a range from 20% to 50% of the programming bias voltage.

### Claim 22 (depends on 20)

The three-dimensional memory device of claim 20, further comprising a pair of dielectric material portions that laterally extend along an additional horizontal direction and located on either side of the stack,
wherein:
the electrically conductive layers comprise word line electrically conductive layers that laterally extend between the pair of dielectric material portions;
the drain select level isolation structures are located between the pair of dielectric material portions and laterally extend along the additional horizontal direction and laterally separate drain select gate electrode layer sections;
each of the drain select level isolation structures generally extends along the additional horizontal direction and includes a pair of lengthwise sidewalls;
each of the pair of lengthwise sidewalls includes an alternating sequence of planar sidewalls and concave vertical sidewalls; and
each of the concave vertical sidewalls contacts a respective one of the memory stack structures.