# US 10,373,957 B2 · Capacitor structure and fabrication method thereof

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- Number: US 10,373,957 B2
- Document ID: US10373957B2
- Status: Granted
- Kind: B2
- Application number: 15/856,084
- Filed: 2017-12-28
- Published: 2018-07-05
- Granted: 2019-08-06
- Earliest claimed: 2016-12-30
- Assignees: United Microelectronics Corp.; Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicants: United Microelectronics Corp.; Fujian Jinhua Integrated Circuit Co., Ltd.
- Inventors: Feng-Yi Chang; Fu-Che Lee; Yi-Wang Zhan; Chieh-Te Chen
- Web page: https://patentgrep.com/patent/US10373957B2

## CPC

- H10B 12/315: {with the capacitor higher than a bit line}
- H10B 12/033: {the capacitor extending over the transistor}
- H10B 12/0335: {Making a connection between the transistor and the capacitor, e.g. plug}
- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/716: {having vertical extensions}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3454: {Amorphous}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 50/283: {by chemical means}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A capacitor structure includes a semiconductor substrate, a dielectric layer disposed on the semiconductor substrate, a storage node pad disposed in the dielectric layer, and a cylindrical lower electrode including a bottom portion recessed into the dielectric layer and in contact with the storage node pad. The bottom extends to a sidewall of the storage node pad.

## Claims

### Claim 1

A capacitor structure, comprising:
a semiconductor substrate;
a dielectric layer on the semiconductor substrate;
a storage node pad in the dielectric layer, wherein the storage node pad has a T-shaped cross-sectional profile;
a lower electrode comprising a bottom portion recessed into the dielectric layer and being in direct contact with the storage node pad, wherein the bottom portion extends to a sidewall of the storage node pad; and
a lattice layer supporting a topmost part of the lower electrode, wherein the lattice layer is not directly contacting the dielectric layer, but is directly contacting the topmost part of the lower electrode.

### Claim 2 (depends on 1)

The capacitor structure according to claim 1, wherein the dielectric layer comprises silicon nitride.

### Claim 3 (depends on 1)

The capacitor structure according to claim 1, wherein the bottom portion comprises a first horizontal segment disposed on a top surface of the storage node pad and a second horizontal segment disposed on the dielectric layer, wherein the second horizontal segment is lower than the first horizontal segment.

### Claim 4 (depends on 3)

The capacitor structure according to claim 3, wherein a step height between the second horizontal segment and the first horizontal segment is less than or equal to 70 angstroms.

### Claim 5 (depends on 3)

The capacitor structure according to claim 3, wherein the bottom portion comprises a vertical segment disposed on the sidewall of the storage node pad, wherein the vertical segment connects the second horizontal segment with the first horizontal segment.

### Claim 6 (depends on 3)

The capacitor structure according to claim 3, wherein the second horizontal segment has a bottom surface that is coplanar with a bottom surface of a protruding portion of the storage node pad.

### Claim 7 (depends on 1)

The capacitor structure according to claim 1, wherein the lattice layer comprises silicon nitride.

### Claim 8 (depends on 1)

The capacitor structure according to claim 1 further comprising:
a capacitor dielectric layer disposed on the lower electrode; and
a capacitor upper electrode disposed on the capacitor dielectric layer.

### Claim 9 (depends on 1)

The capacitor structure according to claim 1, wherein the storage node pad has a T-shaped cross-sectional profile with a straight L-square corner.

### Claim 10 (depends on 1)

The capacitor structure according to claim 1, wherein a center line of the lower electrode is not colinear with the center line of the storage node pad along a vertical orientation.

### Claim 11 (depends on 1)

The capacitor structure according to claim 1, wherein the bottom portion of the lower electrode is recessed below the top surface of the storage node pad at only on one side of the storage node pad.

### Claim 12 (depends on 1)

The capacitor structure according to claim 1, wherein the bottom portion of the lower electrode is in direct contact with only a portion of a top surface of the storage node pad.