# US 10,373,945 B2 · Semiconductor device having electro-static discharge protection structure

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- Number: US 10,373,945 B2
- Document ID: US10373945B2
- Status: Granted
- Kind: B2
- Application number: 15/764,394
- Filed: 2016-08-24
- Published: 2018-09-27
- Granted: 2019-08-06
- Earliest claimed: 2015-09-30
- Assignees: Csmc Technologies Fab2 Co., Ltd.
- Applicants: Csmc Technologies Fab2 Co., Ltd.
- Inventors: Zheng Bian
- Web page: https://patentgrep.com/patent/US10373945B2

## CPC

- H10D 89/611: {using diodes as protective elements}
- H10D 8/25: Zener diodes
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D 30/64: Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D 62/117: {Shapes of semiconductor bodies}
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device, having an electro-static discharge (ESD) protection structure, comprises: a diode, connected between a gate and a source of the semiconductor device, and comprising a diode main body, and two connection portions, respectively connected to two terminals of the diode main body and respectively electrically connected to the gate and the source; and a substrate comprising two insulation pads disposed thereon and separated from each other. A surface of the substrate between the insulation pads is provided with an insulation layer. The diode main body is arranged on the insulation layer. The two connection portions are configured to extend, respectively, from either end of the diode main body to the insulation pad on the corresponding side. A dielectric layer is arranged on the diode and the two insulation pads, and a metal conduction line layer is arranged on the dielectric layer.

## Claims

### Claim 1

A semiconductor device having an electrostatic discharge (ESD) protection structure, wherein the ESD protection structure is a diode coupled between a gate and a source of the semiconductor device, the semiconductor device comprises a substrate, a field oxide layer and a gate oxide layer formed on the substrate, the diode comprises a diode body and two connecting portions coupled to both ends of the diode body, the two connecting portions are configured to be electrically coupled to the gate and the source, respectively; two insulating pads separated from each other are provided on the substrate, an insulating layer having a thickness less than the two insulating pads is provided on a surface of the substrate which is between the two insulating pads, the diode body is provided on the insulating layer, and the two connecting portions extend respectively from one end of the diode body to the corresponding insulating pad; a dielectric layer is provided on the diode and the two insulating pads, a metal wire layer is provided on the dielectric layer, the metal wire layer comprises a first metal leading-out electrically coupled to the gate and a second metal leading-out electrically coupled to the source, and the first metal leading-out and the second metal leading-out are respectively coupled to one connecting portion through a contact hole penetrating through the dielectric layer.

### Claim 2 (depends on 1)

The semiconductor device having the ESD protection structure of claim 1, wherein the two insulating pads are part of the field oxide layer.

### Claim 3 (depends on 1)

The semiconductor device having the ESD protection structure of claim 1, wherein the insulating layer is part of the gate oxide layer.

### Claim 4 (depends on 1)

The semiconductor device having the ESD protection structure of claim 1, wherein the dielectric layer is a dielectric layer subjected to a chemical mechanical polishing (CMP) process.

### Claim 5 (depends on 1)

The semiconductor device having the ESD protection structure of claim 1, wherein two contact holes are filled with tungsten as a conductive substance.

### Claim 6 (depends on 1)

The semiconductor device having the ESD protection structure of claim 1, wherein the semiconductor device is a double diffused metal oxide semiconductor field effect transistor.

### Claim 7 (depends on 1)

The semiconductor device having the ESD protection structure of claim 1, wherein the diode is made of polysilicon, and the diode body is doped with N-type impurities and P-type impurities.

### Claim 8 (depends on 1)

The semiconductor device having the ESD protection structure of claim 1, wherein a surface of the dielectric layer above the diode body is depressed downwardly.