# US 10,373,939 B2 · Hybrid integrated optical device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,373,939 B2 - Document ID: US10373939B2 - Status: Granted - Kind: B2 - Application number: 15/633,343 - Filed: 2017-06-26 - Published: 2018-02-22 - Granted: 2019-08-06 - Earliest claimed: 2009-10-13 - Assignees: Skorpios Technologies, Inc. - Applicants: Skorpios Technologies, Inc. - Inventors: Stephen B. Krasulick; John Dallesasse - Web page: https://patentgrep.com/patent/US10373939B2 ## CPC - H10W 90/00: Package configurations - G02B 6/12002: {Three-dimensional structures} - G02B 6/1225: {comprising photonic band-gap structures or photonic lattices} - G02B 6/136: by etching - G02B 2006/12061: {Silicon} - G02B 2006/12147: {Coupler} - H01S 5/021: {Silicon based substrates} - H01S 5/0237: by soldering - H01S 5/1003: {Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids} - H10H 20/018: {Bonding of wafers} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/8506: {Containers} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector. ## Claims ### Claim 1 A hybrid integrated optical device comprising: a silicon-on-insulator substrate that includes a silicon handle portion, an oxide layer, and a silicon layer, and wherein a first portion of the silicon layer forms a recess relative to a second portion of the silicon layer; a first pad, disposed within the recess and bonded to the first portion of the silicon layer; a device comprising a compound semiconductor material; a second pad, disposed on a first region of the device and bonded to the device; and a bonding metal, wherein: the bonding metal comprises In0.7Pd0.3; the bonding metal is disposed between the first pad and the second pad; the bonding metal is bonded to the first pad and the second pad; and the bonding metal, the first pad, and the second pad secure the device to the substrate; and wherein a height of the device is coplanar with or exceeds a height of the second portion of the silicon layer. ### Claim 2 (depends on 1) The hybrid integrated optical device of claim 1, wherein: the first pad comprises at least one of Ti, Cr, Pt, Ni or W; and the second pad comprises at least one of Ti, Cr, Pt, Ni or W. ### Claim 3 (depends on 1) The hybrid integrated optical device of claim 1, wherein: the substrate comprises a waveguide; and the device is a compound semiconductor device that emits light, wherein the light is optically coupled into the waveguide. ### Claim 4 (depends on 1) The hybrid integrated optical device of claim 1, wherein the first portion of the silicon layer forms a recess proximate the first pad, and wherein a top surface of the device is coplanar with the second portion of the silicon layer. ### Claim 5 (depends on 1) The hybrid integrated optical device of claim 1, further comprising a planarizing material. ### Claim 6 (depends on 5) The hybrid integrated optical device of claim 5, wherein at least a portion of the planarizing material is removed, and further comprising an interconnect metal that provides electrical connectivity to at least one of the device and the silicon layer, at a location where the portion of the planarizing material is removed. ### Claim 7 (depends on 5) The hybrid integrated optical device of claim 5, wherein the planarizing material extends over at least a portion of the silicon-on-insulator substrate and over at least a portion of the device. ### Claim 8 (depends on 1) The hybrid integrated optical device of claim 1, wherein the recess extends from an upper surface of the silicon layer through a portion of the silicon layer, but does not extend to a lower surface of the silicon layer. ### Claim 9 A hybrid integrated optical device wherein comprising: a silicon-on-insulator substrate comprising a silicon handle portion, an oxide layer, and a silicon layer; a first pad, disposed on a first region of the substrate and bonded to the substrate, wherein the first region of the substrate is a first region of the silicon layer; a compound semiconductor optical device; a second pad, disposed on a first region of the compound semiconductor optical device and bonded to the compound semiconductor optical device; and a bonding metal, wherein: the bonding metal forms a first bond; the bonding metal comprises In0.7Pd0.3; the bonding metal is disposed between the first pad and the second pad; the bonding metal is bonded to the first pad and the second pad; the bonding metal, the first pad, and the second pad secure the compound semiconductor optical device to the substrate; and the substrate and the device form a second bond, the second bond comprising a direct semiconductor/semiconductor bond between a second region of the silicon layer and a second region of the compound semiconductor optical device. ### Claim 10 (depends on 9) The hybrid integrated optical device of claim 9, wherein the compound semiconductor optical device is a light-emitting device that is operable to emit light through the direct semiconductor/semiconductor bond. ### Claim 11 (depends on 9) The hybrid integrated optical device of claim 9, wherein the light-emitting device is an optical generator. ### Claim 12 (depends on 9) The hybrid integrated optical device of claim 9, wherein light propagates parallel to an interface between the second region of the silicon layer and the second region of the compound semiconductor optical device, such that the light evanescently couples across the direct semiconductor/semiconductor bond, between the silicon layer and the compound semiconductor optical device. ### Claim 13 (depends on 9) The hybrid integrated optical device of claim 9, wherein the silicon layer is characterized by a first coefficient of thermal expansion (CTE) and the device is characterized by a second CTE, wherein the first CTE and the second CTE are different from one another. ### Claim 14 (depends on 9) The hybrid integrated optical device of claim 9, wherein the substrate and the device form a third bond comprising a direct semiconductor/semiconductor bond between a third region of the silicon layer and a third region of the device.