# US 10,373,934 B2 · Semiconductor device, manufacturing method for semiconductor device, and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,373,934 B2 - Document ID: US10373934B2 - Status: Granted - Kind: B2 - Application number: 15/887,242 - Filed: 2018-02-02 - Published: 2018-06-07 - Granted: 2019-08-06 - Earliest claimed: 2012-06-29 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Satoru Wakiyama; Masaki Okamoto; Yutaka Ooka; Reijiroh Shohji; Yoshifumi Zaizen; Kazunori Nagahata; Masaki Haneda - Web page: https://patentgrep.com/patent/US10373934B2 ## CPC - A01K 5/0114: {Pet food dispensers; Pet food trays (time-controlled A01K5/0291)} - H10W 90/00: Package configurations - A01K 5/02: Automatic devices {(automatic identification devices for stock A01K11/006)} - A01K 15/025: {Toys specially adapted for animals} - H10F 39/018: {of hybrid image sensors} - H10F 39/026: {Wafer-level processing} - H10F 39/809: {of hybrid image sensors} - H10F 39/811: {Interconnections} - H10W 20/023: {the interconnections being through-semiconductor vias} - H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes} - H10W 20/0238: {comprising etching via holes through pads or through electrodes} - H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates} - H10W 20/0253: {comprising forming the through-semiconductor vias after stacking of the chips, wafers or substrates} - H10W 20/083: {the openings being via holes penetrating underlying conductors} - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/2125: {Top-view shapes} - H10W 20/2134: {TSVs extending from the semiconductor wafer into back-end-of-line layers} - H10W 20/217: {comprising ring-shaped isolation structures outside of the via holes} - H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips} - A01K: ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip. ## Claims ### Claim 1 A semiconductor device comprising: a first chip including a first semiconductor substrate and a first wiring; a second chip bonded to a first surface side of the first chip and including a second semiconductor substrate and a second wiring; a through electrode disposed from a second surface side of the first chip to the second wiring in the second chip; and an insulation layer disposed between the through electrode and the first semiconductor substrate in the first chip, wherein the through electrode is electrically connected to the first wiring and the second wiring and the through electrode is disposed through the first wiring, and wherein a first contact width of the through electrode is disposed on the first surface side of the first wiring, a second contact width of the through electrode is disposed on the second surface side of the first wiring, and the second contact width is larger than the first contact width in a cross section view. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the through electrode extends through an opening portion of a first electrode pad of the first wiring. ### Claim 3 (depends on 2) The semiconductor device of claim 2, wherein the through electrode has at least a first surface that is in contact with the opening portion the first electrode pad of the first wiring. ### Claim 4 (depends on 3) The semiconductor device of claim 3, wherein the opening portion of the first electrode pad of the first wiring has a continuously decreasing shape. ### Claim 5 (depends on 3) The semiconductor device of claim 3, wherein the opening portion of the first electrode pad is tapered from a middle of the opening portion to a first surface side of the first electrode pad. ### Claim 6 (depends on 2) The semiconductor device of claim 2, wherein an end of the through electrode contacts a second electrode pad of the second wiring. ### Claim 7 (depends on 1) The semiconductor device of claim 1, wherein the insulation layer surrounds a circumference of the through electrode. ### Claim 8 A semiconductor device comprising: a first chip including a first semiconductor substrate and a first wiring; a second chip bonded to a first surface side of the first chip and including a second semiconductor substrate and a second wiring; a through electrode disposed from a second surface side of the first chip to the second wiring in the second chip; and an insulation layer disposed between the through electrode and the first semiconductor substrate in the first chip, wherein the through electrode is electrically connected to the first wiring and the second wiring and the through electrode is disposed through the first wiring, and wherein a first contact area of the through electrode is disposed on the first surface side of the first wiring, a second contact area of the through electrode is disposed on the second surface side of the first wiring, and the second contact area is larger than the first contact area in a cross section view. ### Claim 9 (depends on 8) The semiconductor device of claim 8, wherein the through electrode extends through an opening portion of a first electrode pad of the first wiring. ### Claim 10 (depends on 9) The semiconductor device of claim 9, wherein the through electrode has at least a first surface that is in contact with the opening portion the first electrode pad of the first wiring. ### Claim 11 (depends on 10) The semiconductor device of claim 10, wherein the opening portion of the first electrode pad of the first wiring has a continuously decreasing shape. ### Claim 12 (depends on 10) The semiconductor device of claim 10, wherein the opening portion of the first electrode pad is tapered from a middle of the opening portion to a first surface side of the first electrode pad. ### Claim 13 (depends on 9) The semiconductor device of claim 9, wherein an end of the through electrode contacts a second electrode pad of the second wiring. ### Claim 14 (depends on 8) The semiconductor device of claim 8, wherein the insulation layer surrounds a circumference of the through electrode. ### Claim 15 A semiconductor device comprising: a first chip including a first semiconductor substrate and a first wiring; a second chip bonded to a first surface side of the first chip and including a second semiconductor substrate and a second wiring; a through electrode disposed from a second surface side of the first chip to the second wiring in the second chip; and an insulation layer disposed between the through electrode and the first semiconductor substrate in the first chip, wherein the through electrode is electrically connected to the first wiring and the second wiring and the through electrode is disposed through the first wiring, and wherein a first slope of the through electrode is disposed in the first wiring, a second slope of the through electrode is disposed in the first surface side of the first substrate more than the first wiring, and the first slope and the second slope are different in a cross section view. ### Claim 16 (depends on 15) The semiconductor device of claim 15, wherein the through electrode extends through an opening portion of a first electrode pad of the first wiring. ### Claim 17 (depends on 16) The semiconductor device of claim 16, wherein the through electrode has at least a first surface that is in contact with the opening portion the first electrode pad of the first wiring. ### Claim 18 (depends on 17) The semiconductor device of claim 17, wherein the opening portion of the first electrode pad of the first wiring has a continuously decreasing shape. ### Claim 19 (depends on 17) The semiconductor device of claim 17, wherein the opening portion of the first electrode pad is tapered from a middle of the opening portion to a first surface side of the first electrode pad. ### Claim 20 (depends on 16) The semiconductor device of claim 16, wherein an end of the through electrode contacts a second electrode pad of the second wiring.