# US 10,373,916 B2 · Semiconductor device packages

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- Number: US 10,373,916 B2
- Document ID: US10373916B2
- Status: Granted
- Kind: B2
- Application number: 15/222,820
- Filed: 2016-07-28
- Published: 2018-02-01
- Granted: 2019-08-06
- Earliest claimed: 2016-07-28
- Assignees: Universal Scientific Industrial (Shanghai) Co., Ltd.
- Applicants: Universal Scientific Industrial (Shanghai) Co., Ltd.
- Inventors: Ji-Min Lin; Ming-Wen Liao; Chun-Ying Huang
- Web page: https://patentgrep.com/patent/US10373916B2

## CPC

- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/276: {the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation}
- H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)}
- H10W 74/129: {forming a chip-scale package [CSP]}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device package includes a substrate, a component on a surface of the substrate, a package body encapsulating the component, and an electromagnetic interference (EMI) shield conformally formed on the package body, where the EMI shield has a side portion defining an opening.

## Claims

### Claim 1

A semiconductor device package comprising:
a substrate having a top surface and a lateral surface perpendicular to the top surface;
at least one component on the top surface of the substrate;
a package body encapsulating the at least one component and having a lateral surface; and
an electromagnetic interference (EMI) shield conformally formed on the package body and covering the lateral surface of the package body, the EMI shield having a first side portion defining a first opening;
wherein the lateral surface of the package body covered by the EMI shield is substantially coplanar with the lateral surface of the substrate,
the at least one component is configured to operate at a frequency of operation, and the EMI shield having the first opening is configured to shift a resonant frequency that corresponds to the frequency of operation of the at least one component, and
the first opening has a first length L1 determined by 0.026λ≤L1≤0.155λ and λ is a wavelength related to the frequency of operation of the semiconductor device package, and the frequency of operation is in a range from approximately 5.180 GHz to approximately 5.825 GHz.

### Claim 2 (depends on 1)

The semiconductor device package of claim 1, wherein the first opening has a height, wherein the first length L1 is greater than the height.

### Claim 3 (depends on 1)

The semiconductor device package of claim 1, wherein the first length L1 is further determined by 0.029λ≤L1≤0.139λ.

### Claim 4 (depends on 1)

The semiconductor device package of claim 1, wherein the EMI shield further defines a second opening on the first side portion, the second opening has a second length L2, a sum Ls of the first length L1 and the second length L2 is determined by 0.026λ<Ls≤0.155λ.

### Claim 5 (depends on 1)

The semiconductor device package of claim 1, wherein the EMI shield further defines a plurality of second openings on the first side portion, each of the plurality of second openings has a second length L2, a sum Ls of the first length L1 and the second lengths L2 is determined by 0.026λ<Ls≤0.155λ and λ is a wavelength related to the frequency of operation of the semiconductor device package, and the frequency of operation is in a range from approximately 5.180 GHz to approximately 5.825 GHz.

### Claim 6 (depends on 1)

The semiconductor device package of claim 1, wherein the EMI shield further comprises a second side portion connected to the first side portion, and the EMI shield further defines a second opening on the second side portion.

### Claim 7 (depends on 1)

The semiconductor device package of claim 1, wherein the EMI shield further comprises a second side portion opposite the first side portion, and the EMI shield further defines a second opening on the second side portion.

### Claim 8 (depends on 1)

The semiconductor device package of claim 1, wherein the EMI shield further comprises a second side portion connected to the first side portion, and the EMI shield further defines a second opening on the second side portion, wherein the first opening and the second opening are formed adjacent to a corner joined by the first side portion and the second side portion.

### Claim 9

A semiconductor device package comprising:
a substrate having a top surface and a lateral surface perpendicular to the top surface;
a circuit on the top surface of the substrate, the circuit configured for operation at a first frequency;
a package body encapsulating the circuit and having a lateral surface; and
a conformal shield on the package body and covering the lateral surface of the package body, the conformal shield defining a first opening, wherein the conformal shield defining the first opening is configured to shift a resonant frequency that corresponds to the first frequency at which the circuit is configured for operation;
wherein the lateral surface of the package body covered by the conformal shield is substantially coplanar with the lateral surface of the substrate, and
the first opening has a first length L1 determined by 0.026λ≤L1≤0.155λ and λ is a wavelength related to the frequency of operation of the semiconductor device package, and the frequency of operation is in a range from approximately 5.180 GHz to approximately 5.825 GHz.

### Claim 10 (depends on 9)

The semiconductor device package of claim 9, the conformal shield comprising a first side portion defining the first opening.

### Claim 11 (depends on 10)

The semiconductor device package of claim 10, the conformal shield comprising a second side defining a second opening.

### Claim 12 (depends on 9)

The semiconductor device package of claim 9, wherein a position of the first opening is configured to reduce an electrical field strength in the semiconductor device package.

### Claim 13 (depends on 12)

The semiconductor device package of claim 12, wherein the position is configured to shift the resonance frequency of the semiconductor device package.

### Claim 14 (depends on 9)

The semiconductor device package of claim 9, wherein the first opening has a height, and the first length L1 is greater than the height.

### Claim 15

A semiconductor device package comprising:
a substrate having a top surface and a lateral surface perpendicular to the top surface;
at least one component on the top surface of the substrate;
a package body encapsulating the at least one component and having a lateral surface; and
an electromagnetic interference (EMI) shield conformally formed on the package body and covering the lateral surface of the package body, the EMI shield comprising an inductor structure;
wherein the lateral surface of the package body covered by the EMI shield is substantially coplanar with the lateral surface of the substrate;
the at least one component is configured to operate at a frequency of operation, and the EMI shield has at least one opening configured to shift a resonant frequency that corresponds to the frequency of operation of the at least one component, and
the at least one opening has a first length L1 determined by 0.026λ≤L1≤0.155λ and λ is a wavelength related to the frequency of operation of the semiconductor device package, and the frequency of operation is in a range from approximately 5.180 GHz to approximately 5.825 GHz.

### Claim 16 (depends on 15)

The semiconductor device package of claim 15, wherein the at least one opening is a first opening, and the inductor structure defines the first opening and a second opening adjacent to the first opening.

### Claim 17 (depends on 16)

The semiconductor device package of claim 16, wherein the first opening has the first length, and the first opening and the second opening are separated by a wall portion having a second length, wherein the first length is greater the second length.

### Claim 18 (depends on 17)

The semiconductor device package of claim 17, wherein a ratio of the first length to the second length is approximately one to approximately ten.

### Claim 19 (depends on 16)

The semiconductor device package of claim 16, the EMI shield defines the opening at a side of the semiconductor device package.