# US 10,373,913 B2 · Method of marking a semiconductor package > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,373,913 B2 - Document ID: US10373913B2 - Status: Granted - Kind: B2 - Application number: 15/457,840 - Filed: 2017-03-13 - Published: 2017-06-29 - Granted: 2019-08-06 - Earliest claimed: 2014-08-26 - Assignees: DECA Technologies Inc. - Applicants: DECA Technologies Inc. - Inventors: Christopher M. Scanlan - Web page: https://patentgrep.com/patent/US10373913B2 ## CPC - H10W 46/00: Marks applied to devices, e.g. for alignment or identification - H10P 54/00: Cutting or separating of wafers, substrates or parts of devices - H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 72/0198: {batch processes} - H10W 74/014: {using batch processing} - H10W 74/129: {forming a chip-scale package [CSP]} - H10W 46/101: {characterised by the type of information, e.g. logos or symbols} - H10W 46/103: {alphanumeric information, e.g. words, letters or serial numbers} - H10W 46/106: {digital information, e.g. bar codes} - H10W 46/301: {for alignment} - H10W 46/401: {for identification or tracking} - H10W 46/607: {Located on parts of packages, e.g. on encapsulations or on package substrates} - H10W 72/241: {Dispositions, e.g. layouts} - H10W 72/874: {On different surfaces} - H10W 72/9413: {on encapsulations} - H10W 74/117: {the substrate having spherical bumps for external connection} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 99/00: Subject matter not provided for in other groups of this subclass - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method of making a semiconductor device can include providing a wafer comprising a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface. A photosensitive layer can be formed over the wafer and on a backside of each of the plurality of semiconductor die within the wafer with a coating machine. An identifying mark can be formed within the photosensitive layer for each of the plurality of semiconductor die with a digital exposure machine and a developer, wherein a thickness of the identifying mark is less than or equal to 50 percent of a thickness of the photosensitive layer. The photosensitive layer can be cured. The wafer can be singulated into a plurality of semiconductor devices. ## Claims ### Claim 1 A method of making a semiconductor device, comprising: providing a reconstituted wafer comprising a plurality of semiconductor die coupled together with an encapsulant material, the encapsulant material being disposed between and contacting side surfaces of the plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface, the side surfaces extending from the active surface to the backside; forming a multi-layer material on the reconstituted wafer and over a backside of each of the plurality of semiconductor die within the reconstituted wafer with a coating machine, the multi-layer material comprising a non-photosensitive layer and a photosensitive layer; forming an identifying mark in the photosensitive layer of the multi-layer material for each of the plurality of semiconductor die while the multi-layer material is on the reconstituted wafer, the identifying mark for each of the semiconductor die being formed by removing a portion of the photosensitive layer with a digital exposure machine and a developer, the identifying mark encoding unique product information comprising an identity of, and a location within, a native semiconductor wafer from which each of the plurality of semiconductor die was taken; curing the photosensitive layer; and singulating the reconstituted wafer through the encapsulating material to form a plurality of semiconductor devices, wherein singulating the reconstituted wafer is done after forming the identifying mark for each of the plurality of semiconductor die in the photosensitive layer of the multi-layer material. ### Claim 2 (depends on 1) The method of claim 1, wherein the photosensitive layer comprises a first color different from a second color of the non-photosensitive layer. ### Claim 3 (depends on 1) The method of claim 1, wherein forming the identifying mark further comprises forming one or more features comprising text, letters, shapes, symbols, logos, alphanumeric sequences, two-dimensional matrix codes, bar codes, QR codes, IR codes, or pin identifiers and a manufacturing time of the identifying mark is independent of a number of the one or more features in the identifying mark. ### Claim 4 (depends on 1) The method of claim 1, wherein the coating machine for forming the photosensitive layer over the wafer further comprises at least one of a film laminator, a spin coater, a curtain coater, a spray coater, and a slot die coater. ### Claim 5 (depends on 1) The method of claim 1, further comprising forming the identifying mark for each of the plurality of semiconductor die with a feature size less than or equal to 150 micrometers in length, width, or both. ### Claim 6 A method of making a semiconductor device, comprising: providing a wafer comprising a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface; forming a multi-layer material on the wafer and over a backside of each of the plurality of semiconductor die within the wafer with a coating machine, the multi-layer material comprising a non-photosensitive layer and a photosensitive layer; forming an identifying mark in the photosensitive layer of the multi-layer material for each of the plurality of semiconductor die while the multi-layer material is on the wafer, the identifying mark for each of the semiconductor die being formed by removing a portion of the photosensitive layer with a digital exposure machine and a developer, the identifying mark encoding unique product information; curing the photosensitive layer; and singulating the wafer into a plurality of semiconductor devices after forming the identifying mark in the photosensitive layer. ### Claim 7 (depends on 6) The method of claim 6, wherein the wafer is at least one of a semiconductor wafer, a native semiconductor wafer, a reconstituted wafer, and a reconstituted panel. ### Claim 8 (depends on 6) The method of claim 6, further comprising forming the photosensitive layer on the backside of each of the plurality of semiconductor die within the wafer. ### Claim 9 (depends on 6) The method of claim 6, wherein the photosensitive layer comprises a first color different from a second color of the non-photosensitive layer. ### Claim 10 (depends on 6) The method of claim 6, wherein forming the identifying mark further comprises forming one or more features comprising text, letters, shapes, symbols, logos, alphanumeric sequences, two-dimensional matrix codes, bar codes, QR codes, IR codes, or pin identifiers and a manufacturing time of the identifying mark is independent of a number of the one or more features in the identifying mark. ### Claim 11 (depends on 6) The method of claim 6, wherein the coating machine for forming the photosensitive layer over the wafer further comprises at least one of a film laminator, a spin coater, a curtain coater, a spray coater, and a slot die coater. ### Claim 12 (depends on 6) The method of claim 6, further comprising forming the identifying mark for each of the plurality of semiconductor die with a feature size less than or equal to 150 micrometers in length, width, or both. ### Claim 13 A method of making a semiconductor device, comprising: providing a wafer comprising a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface; forming a multi-layer material comprising a non-photosensitive layer and a photosensitive layer, wherein the photosensitive layer is formed on the wafer and on each of the plurality of semiconductor die; and forming a unique identifying mark in the photosensitive layer of the multi-layer material with a maskless patterning system for each of the plurality of semiconductor die while the multi-layer material is on the wafer, forming the unique identifying mark for each of the plurality of semiconductor die by removing a portion of the photosensitive layer without laser ablation, the unique identifying mark encoding unique product information. ### Claim 14 (depends on 13) The method of claim 13, wherein the wafer is at least one of a semiconductor wafer, a native semiconductor wafer, a reconstituted wafer, and a reconstituted panel. ### Claim 15 (depends on 13) The method of claim 13, further comprising forming the photosensitive layer on the backside of each of the plurality of semiconductor die within the wafer. ### Claim 16 (depends on 13) The method of claim 13, further comprising forming the unique identifying mark with a thickness less than or equal to 50 percent of a thickness of the photosensitive layer. ### Claim 17 (depends on 13) The method of claim 13, further comprising forming the unique identifying mark with a feature size less than or equal to 150 micrometers in length, width, or both.