# US 10,373,899 B2 · Semiconductor module using lead frame for power and control terminals and both having asymmetric or inhomogenous configuration

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- Number: US 10,373,899 B2
- Document ID: US10373899B2
- Status: Granted
- Kind: B2
- Application number: 15/969,807
- Filed: 2018-05-03
- Published: 2019-06-27
- Granted: 2019-08-06
- Earliest claimed: 2017-12-22
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Hongbo Zhang; Shogo Shibata
- Web page: https://patentgrep.com/patent/US10373899B2

## CPC

- H10W 90/811: {Multiple chips on leadframes}
- H10W 40/10: Arrangements for heating
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 70/421: {Shapes or dispositions}
- H10W 70/442: {of multiple leadframes in a single chip}
- H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00}
- H10W 90/00: Package configurations
- H10D 62/8303: {Diamond}
- H10D 62/8325: {Silicon carbide}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10W 70/465: {Bumps or wires}
- H10W 72/5366: {the bond wires having kinks}
- H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 90/753: {between laterally-adjacent chips}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor module includes: a semiconductor chip; a package sealing the semiconductor chip; and a plurality of terminals connected to the semiconductor chip and protruding from the package, wherein the plurality of terminals includes a plurality of first terminals arranged side by side at a first pitch, and a plurality of second terminals arranged side by side at a second pitch, each terminal has a base portion, a tip portion narrower than the base portion, and a connection portion connecting the base portion and the tip portion, the connection portions of the plurality of first terminals are right-angled, and the connection portions of the plurality of second terminals are arc-shaped.

## Claims

### Claim 1

A semiconductor module comprising:
a semiconductor chip;
a package sealing the semiconductor chip; and
a plurality of terminals connected to the semiconductor chip and protruding from the package,
wherein the plurality of terminals includes a plurality of first terminals arranged side by side at a first pitch, and a plurality of second terminals arranged side by side at a second pitch,
each terminal has a base portion, a tip portion narrower than the base portion, and a connection portion connecting the base portion and the tip portion,
the connection portions of the plurality of first terminals are right-angled, and
the connection portions of the plurality of second terminals are arc-shaped.

### Claim 2 (depends on 1)

The semiconductor module according to claim 1, wherein a relationship between a radius r of the arc and a width L of the tip portion of the second terminal satisfy r/L≥⅓.

### Claim 3 (depends on 2)

The semiconductor module according to claim 2, wherein an angle of the arc of the connection portion of the second terminals is not less than 90°.

### Claim 4 (depends on 3)

The semiconductor module according to claim 3, further comprising:
a radiation fin fitted to the package; and
a substrate fitted to the plurality of terminals.

### Claim 5 (depends on 4)

The semiconductor module according to claim 4, wherein the semiconductor chip is made of a wide-band-gap semiconductor.

### Claim 6 (depends on 3)

The semiconductor module according to claim 3, wherein the semiconductor chip is made of a wide-band-gap semiconductor.

### Claim 7 (depends on 2)

The semiconductor module according to claim 2, further comprising:
a radiation fin fitted to the package; and
a substrate fitted to the plurality of terminals.

### Claim 8 (depends on 7)

The semiconductor module according to claim 7, wherein the semiconductor chip is made of a wide-band-gap semiconductor.

### Claim 9 (depends on 2)

The semiconductor module according to claim 2, wherein the semiconductor chip is made of a wide-band-gap semiconductor.

### Claim 10 (depends on 1)

The semiconductor module according to claim 1, wherein an angle of the arc of the connection portion of the second terminals is not less than 90°.

### Claim 11 (depends on 10)

The semiconductor module according to claim 10, further comprising:
a radiation fin fitted to the package; and
a substrate fitted to the plurality of terminals.

### Claim 12 (depends on 11)

The semiconductor module according to claim 11, wherein the semiconductor chip is made of a wide-band-gap semiconductor.

### Claim 13 (depends on 10)

The semiconductor module according to claim 10, wherein the semiconductor chip is made of a wide-band-gap semiconductor.

### Claim 14 (depends on 1)

The semiconductor module according to claim 1, further comprising:
a radiation fin fitted to the package; and
a substrate fitted to the plurality of terminals.

### Claim 15 (depends on 14)

The semiconductor module according to claim 14, wherein the semiconductor chip is made of a wide-band-gap semiconductor.

### Claim 16 (depends on 1)

The semiconductor module according to claim 1, wherein the semiconductor chip is made of a wide-band-gap semiconductor.