# US 10,373,871 B2 · Method of separating semiconductor dies from a semiconductor substrate, semiconductor substrate assembly and semiconductor die assembly > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,373,871 B2 - Document ID: US10373871B2 - Status: Granted - Kind: B2 - Application number: 15/968,312 - Filed: 2018-05-01 - Published: 2018-08-30 - Granted: 2019-08-06 - Earliest claimed: 2016-05-25 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Markus Brunnbauer; Franco Mariani - Web page: https://patentgrep.com/patent/US10373871B2 ## CPC - H10P 54/00: Cutting or separating of wafers, substrates or parts of devices - H10P 50/642: {Chemical etching} - H10P 50/691: {for Group IV materials or Group III-V materials} - H10P 50/693: {characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane} - H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices - H10P 72/74: {using temporarily an auxiliary support} - H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes} - H10W 46/00: Marks applied to devices, e.g. for alignment or identification - H10P 72/7412: {the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support} - H10P 72/7416: {used during dicing or grinding} - H10P 72/7422: {used to protect an active side of a device or wafer} - H10W 46/101: {characterised by the type of information, e.g. logos or symbols} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel to the main surface. At least some of the separation grooves are spaced from a lateral outer surface of the semiconductor substrate by at most a first distance. An indentation is formed along a lateral surface. The indentation extends from the main surface into the semiconductor substrate. A minimum horizontal indentation width of the indentation is equal to or greater than the first distance. A with respect to the main surface vertical extension of the indentation is equal to or greater than a vertical extension of the separation grooves. ## Claims ### Claim 1 A semiconductor die assembly, comprising a plurality of semiconductor dies separated in two orthogonal horizontal directions by equally-spaced separation trenches, respectively, wherein the semiconductor dies are arranged within a circle with a first radius around a center axis of the semiconductor die assembly and the first radius is smaller than a wafer standard radius by an indentation width of at least 1 mm and at most 5 mm; a stiff carrier member adhered onto first surfaces at a front side of the semiconductor dies through a radiation or thermal release adhesive film; and a flexible pick-up tape adhered onto second surfaces on a back side of the semiconductor dies through a radiation or thermal release adhesive film. ### Claim 2 (depends on 1) The semiconductor die assembly of claim 1, wherein a horizontal width of the separation trenches is in a range from 6 μm to 20 μm. ### Claim 3 (depends on 1) The semiconductor die assembly of claim 1, wherein the semiconductor dies are dies of microcontrollers for chip cards. ### Claim 4 (depends on 1) The semiconductor die assembly of claim 1, wherein the flexible pick-up tape comprises a substrate film and an adhesion film. ### Claim 5 (depends on 4) The semiconductor die assembly of claim 4, wherein the substrate film comprises PVC (Polyvinyl Chloride). ### Claim 6 (depends on 4) The semiconductor die assembly of claim 4, wherein the substrate film comprises polyeolefin. ### Claim 7 (depends on 4) The semiconductor die assembly of claim 4, wherein the adhesion film comprises rubber. ### Claim 8 (depends on 4) The semiconductor die assembly of claim 4, wherein the adhesion film comprises UV-sensitive acrylic. ### Claim 9 A semiconductor die assembly, comprising: a plurality of semiconductor dies separated in two orthogonal horizontal directions by equally-spaced separation trenches, respectively, wherein the semiconductor dies are arranged within a circle with a first radius around a center axis of the semiconductor die assembly and the first radius is smaller than a wafer standard radius by an indentation width; a stiff carrier member adhered onto first surfaces at a front side of the semiconductor dies through a radiation or thermal release adhesive film; and a flexible pick-up tape adhered onto second surfaces on a back side of the semiconductor dies through a radiation or thermal release adhesive film. ### Claim 10 (depends on 9) The semiconductor die assembly of claim 9, wherein a horizontal width of the separation trenches is in a range from 6 μm to 20 μm. ### Claim 11 (depends on 9) The semiconductor die assembly of claim 9, wherein the semiconductor dies are dies of microcontrollers for chip cards. ### Claim 12 (depends on 9) The semiconductor die assembly of claim 9, wherein the flexible pick-up tape comprises a substrate film and an adhesion film. ### Claim 13 (depends on 12) The semiconductor die assembly of claim 12, wherein the substrate film comprises PVC (Polyvinyl Chloride). ### Claim 14 (depends on 12) The semiconductor die assembly of claim 12, wherein the substrate film comprises polyeolefin. ### Claim 15 (depends on 12) The semiconductor die assembly of claim 12, wherein the adhesion film comprises rubber. ### Claim 16 (depends on 12) The semiconductor die assembly of claim 12, wherein the adhesion film comprises UV-sensitive acrylic. ### Claim 17 (depends on 9) The semiconductor die assembly of claim 9, wherein the indentation width is at least 1 mm. ### Claim 18 (depends on 9) The semiconductor die assembly of claim 9, wherein the indentation width is less than 5 mm. ### Claim 19 A semiconductor die assembly, comprising: a plurality of semiconductor dies separated in two orthogonal horizontal directions by equally-spaced separation trenches, respectively, wherein the semiconductor dies are arranged within a circle with a first radius around a center axis of the semiconductor die assembly and the first radius is smaller than a wafer standard radius by an indentation width; and a flexible pick-up tape adhered onto a back side of the semiconductor dies through a radiation or thermal release adhesive film, wherein the indentation width is equal to or greater than a width of the separation trenches. ### Claim 20 (depends on 19) The semiconductor die assembly of claim 19, wherein the indentation width is greater than 1 mm and less than 5 mm.