# US 10,373,857 B2 · Backside stealth dicing through tape followed by front side laser ablation dicing process

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- Number: US 10,373,857 B2
- Document ID: US10373857B2
- Status: Granted
- Kind: B2
- Application number: 16/017,567
- Filed: 2018-06-25
- Published: 2019-05-02
- Granted: 2019-08-06
- Earliest claimed: 2017-10-30
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Andy E. Hooper; Nicholas Wade Clyde
- Web page: https://patentgrep.com/patent/US10373857B2

## CPC

- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- B23K 26/009: {using a non-absorbing, e.g. transparent, reflective or refractive, layer on the workpiece (using a mask on the workpiece B23K26/0661)}
- B23K 26/364: for making a groove or trench, e.g. for scribing a break initiation groove
- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 70/20: {Cleaning during device manufacture}
- H10P 72/0428: {Apparatus for mechanical treatment or grinding or cutting}
- B23K 2101/40: Semiconductor devices
- H10P 72/7416: {used during dicing or grinding}
- H10P 72/742: {involving stretching of the auxiliary support post dicing}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM

## Abstract

A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.

## Claims

### Claim 1

A method of forming a plurality of semiconductor devices comprising:
cleaving at least a portion of a silicon lattice of a silicon layer of a semiconductor device by applying in a pattern a first laser to the semiconductor device;
cutting a groove in a circuitry layer of the semiconductor device by applying in the pattern a second laser to the semiconductor device; and
applying an expansion force to a tape material on a back surface of the semiconductor device, wherein a plurality of semiconductor devices are formed from the semiconductor device in accordance with the pattern, wherein the circuitry layer has a first thickness and the groove in circuitry layer has a second thickness that is less than the first thickness.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
wherein the first laser is applied through the tape on the back surface of the semiconductor and wherein the second laser is applied after the first laser.

### Claim 3 (depends on 2)

The method of claim 2, wherein the first laser has a focal point substantially in a middle portion of the silicon layer.