# US 10,373,850 B2 · Pre-clean chamber and process with substrate tray for changing substrate temperature > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,373,850 B2 - Document ID: US10373850B2 - Status: Granted - Kind: B2 - Application number: 14/645,158 - Filed: 2015-03-11 - Published: 2016-09-15 - Granted: 2019-08-06 - Earliest claimed: 2015-03-11 - Assignees: ASM IP Holding B.V. - Applicants: Asm IP Holding B.V. - Inventors: John Tolle; Eric R. Hill - Web page: https://patentgrep.com/patent/US10373850B2 ## CPC - H10P 72/0602: {Temperature monitoring} - B05C 9/14: the auxiliary operation involving heating {or cooling} - H10P 72/0434: {mainly by convection} - H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B05C: APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (spraying apparatus, atomising apparatus, nozzles B05B; plant for applying liquids or other fluent materials to objects by electrostatic spraying B05B5/08) ## Abstract A system for removing an oxide material from a surface of a substrate can include a substrate tray to receive the substrate, and a cooling body to receive the substrate tray. The system may include a first temperature control element configured to control a temperature of the substrate tray and a second temperature control element configured to control a temperature of the cooling body, where the first temperature control element and the second temperature control element can be independently controlled. A method for removing oxide material from a surface of a substrate can include providing the substrate on a substrate tray having heating elements, cooling the substrate by transferring heat from the substrate tray to a cooling body, depositing a halogen-containing material on the cooled substrate while the substrate is on the cooling body, and subsequently sublimating the halogen-containing material by heating the cooled substrate by transferring heat from the substrate tray to the substrate. ## Claims ### Claim 1 A method for integrated circuit fabrication, comprising: removing oxide material from a surface of a substrate, wherein the surface comprises silicon, and wherein removing the oxide material comprises: providing the substrate on a substrate tray comprising a heating element; cooling the substrate by transferring heat from the substrate tray to a cooling body, wherein the substrate tray is movable relative to the cooling body and wherein cooling the substrate comprises reducing a distance between the cooling body and the substrate seated upon the substrate tray; depositing a halogen-containing material on the cooled substrate while the substrate is on the substrate tray; subsequently sublimating the halogen-containing material by heating the cooled substrate by increasing a distance between the cooling body and the substrate seated upon the substrate tray and by transferring heat from the substrate tray to the substrate, wherein cooling the substrate, depositing the halogen-containing material on the cooled substrate, and subsequently sublimating the halogen-containing material are each part of an oxide removal cycle, and subjecting the substrate to a plurality of sequential oxide removal cycles in a single reaction chamber without transferring the substrate to a different reaction chamber, wherein, during heating the cooled substrate, an upper solid surface of the cooling body defines a separation between the upper solid surface and a lower surface of the substrate tray, and wherein a ratio of a mass of the cooling body to a mass of the substrate tray is in a range of 10:1 to 60:1. ### Claim 2 (depends on 1) The method of claim 1, wherein cooling the substrate, depositing the halogen-containing material, and subsequently sublimating the halogen-containing material are performed while the cooling body is in direct contact with the substrate tray. ### Claim 3 (depends on 2) The method of claim 2, wherein cooling the substrate comprises reducing or stopping heating power to the heating element of the substrate tray, and wherein heating the substrate comprises increasing or providing heating power to the heating element of the substrate tray. ### Claim 4 (depends on 1) The method of claim 1, wherein the cooling body comprises: a heating element; and a cooling system, wherein the heating elements and cooling system are configured to actively maintain a temperature of the cooling body below a temperature of the substrate tray during depositing the halogen-containing material and during subsequently sublimating the halogen-containing material. ### Claim 5 (depends on 1) The method of claim 1, wherein the substrate tray and the cooling body are in direct contact during depositing the halogen-containing material, further comprising: separating the substrate tray and the cooling body prior to sublimating the halogen-containing material, wherein the cooling body is not in direct contact with the substrate tray during sublimating the halogen-containing material. ### Claim 6 (depends on 5) The method of claim 5, further comprising cooling the substrate tray subsequent to sublimating the halogen-containing material, wherein cooling the substrate tray comprises bring the cooling body and the substrate tray in direct contact with one another subsequent to sublimating the halogen-containing material. ### Claim 7 (depends on 1) The method of claim 1, wherein the substrate surface further comprises germanium. ### Claim 8 (depends on 1) The method of claim 1, wherein the substrate surface further comprises silicon nitride, and wherein removing the oxide material comprises selectively removing the oxide material relative to the silicon nitride at a selectivity of 7:1 to 20:1. ### Claim 9 (depends on 1) The method of claim 1, wherein sublimating the halogen-containing material comprises heating the substrate tray to achieve a substrate temperature between 80° C. and 150° C. ### Claim 10 (depends on 1) The method of claim 1, wherein depositing the halogen-containing material comprises maintaining a substrate temperature between 22° C. and 28° C. ### Claim 11 (depends on 1) The method of claim 1, wherein depositing the halogen-containing material comprises exposing the surface of the substrate to a fluorine-containing gas and a hydrogen-containing gas. ### Claim 12 (depends on 11) The method of claim 11, wherein the halogen-containing material comprises ammonium hexafluorosilicate. ### Claim 13 (depends on 1) The method of claim 1, further comprising depositing an epitaxial layer on the substrate subsequent to removing the oxide material. ### Claim 14 (depends on 1) The method of claim 1, wherein the cooling body is a susceptor. ### Claim 15 (depends on 1) The method of claim 1, further comprising wherein during cooling the substrate, the upper solid surface of the cooling body is in direct contact with the lower surface of the substrate tray. ### Claim 16 (depends on 1) The method of claim 1, wherein the upper solid surface of the cooling body comprises one or more raised recessed features. ### Claim 17 A method for integrated circuit fabrication, comprising: placing a substrate on a substrate tray comprising a heating element, wherein the substrate tray is over a cooling body comprising a solid material, wherein the substrate tray is movable relative to the cooling body; and removing oxide material from a surface of the substrate by performing a plurality of oxide removal cycles in a same reaction chamber, each of the oxide removal cycle comprising: depositing a halogen-containing material on the substrate surface; and sublimating the halogen-containing material by controlling a temperature of the substrate tray independently from a temperature of the cooling body, wherein a ratio of a mass of the cooling body to a mass of the substrate tray is in a range of 10:1 to 60:1. ### Claim 18 (depends on 17) The method of claim 17, wherein the surface comprises at least one of silicon and germanium. ### Claim 19 (depends on 18) The method of claim 18, wherein the surface further comprises silicon nitride, and wherein removing the second oxide material comprises selectively removing the second oxide material relative to the silicon nitride at a selectivity of 40:1 to 100:1. ### Claim 20 (depends on 17) The method of claim 17, wherein controlling a temperature of the substrate tray comprises heating the substrate tray. ### Claim 21 (depends on 20) The method of claim 20, wherein heating the substrate tray comprises heating the substrate tray while the substrate tray is in direct contact with the cooling body, wherein the cooling body has a temperature set point lower than a temperature set point of the substrate tray. ### Claim 22 (depends on 17) The method of claim 17, further comprising: cooling the substrate tray by bringing the substrate tray in contact with the cooling body, wherein depositing the halogen-containing material is performed while the substrate tray is in contact with the cooling body. ### Claim 23 (depends on 22) The method of claim 22, further comprising: spacing apart the cooling body and the substrate tray; and heating the substrate tray while the cooling body and the substrate tray are spaced apart, wherein sublimating the halogen-containing material is performed while the cooling body in the substrate tray are spaced apart.