# US 10,373,822 B2 · Gas flow profile modulated control of overlay in plasma CVD films > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,373,822 B2 - Document ID: US10373822B2 - Status: Granted - Kind: B2 - Application number: 15/816,520 - Filed: 2017-11-17 - Published: 2018-04-05 - Granted: 2019-08-06 - Earliest claimed: 2014-10-03 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Prashant Kumar Kulshreshtha; Sudha Rathi; Praket P. Jha; Saptarshi Basu; Kwangduk Douglas Lee; Martin J. Seamons; Bok Hoen Kim; Ganesh Balasubramanian; Ziqing Duan; Lei Jing; Mandar B. Pandit - Web page: https://patentgrep.com/patent/US10373822B2 ## CPC - H10P 14/6336: {in the presence of a plasma [PECVD]} - C23C 16/04: Coating on selected surface areas, e.g. using masks - C23C 16/26: Deposition of carbon only - C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber - C23C 16/45502: {Flow conditions in reaction chamber} - C23C 16/45508: {Radial flow} - C23C 16/45565: {Shower nozzles} - C23C 16/458: characterised by the method used for supporting substrates in the reaction chamber - C23C 16/4584: {the substrate being rotated} - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - H10P 14/6902: {composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon} - H10P 50/73: {using masks for insulating materials} - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10P 76/4085: {characterised by the processes involved to create the masks} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater. ## Claims ### Claim 1 A processing chamber for depositing a film on a substrate, comprising: a chamber body comprising a chamber lid, a chamber bottom, and one or more chamber walls which define a processing volume; a heater, movably disposed in the processing volume, the heater comprising: a stem; and a heater plate disposed on the stem, the heater plate comprising a first heating zone and a second heating zone circumscribing the first heating zone; and a gas distribution assembly disposed in the processing volume, comprising: a blocker plate disposed in the processing volume between the heater plate and the chamber lid, the blocker plate comprising a circular first inner region and an annular first outer region circumscribing the circular first inner region; and a showerhead disposed in the processing volume between the blocker plate and the heater plate, the showerhead comprising a circular second inner region and an annular second outer region circumscribing the circular second inner region, wherein a diameter of the circular first inner region of the blocker plate substantially corresponds to a diameter of the circular second inner region of the showerhead. ### Claim 2 (depends on 1) The processing chamber of claim 1, wherein the heater plate comprises ceramic. ### Claim 3 (depends on 2) The processing chamber of claim 2, further comprising one or more heating coils configured to heat the first heating zone to a first temperature and the second heating zone to a second temperature. ### Claim 4 (depends on 3) The processing chamber of claim 3, wherein the circular first inner region and the annular first outer region each include a first plurality of openings formed therethrough, and wherein a density of openings in the circular first inner region is greater than a density of openings in the annular first outer region. ### Claim 5 (depends on 4) The processing chamber of claim 4, wherein the circular second inner region and the annular second outer region each include a second plurality of openings formed therethrough, and wherein a density of openings in the circular second inner region is greater than a density of openings in the annular second outer region. ### Claim 6 (depends on 5) The processing chamber of claim 5, wherein the heater plate comprises between about two and about twenty heating zones. ### Claim 7 (depends on 5) The processing chamber of claim 5, wherein the second heating zone is between about 90 mm and about 140 mm from a center axis of the heater plate. ### Claim 8 (depends on 1) The processing chamber of claim 1, further comprising a shadow ring configured to support a substrate. ### Claim 9 (depends on 1) The processing chamber of claim 1, wherein an outer diameter of the annular second outer region of the showerhead substantially corresponds to a diameter of a substrate to be processed in the processing chamber. ### Claim 10 (depends on 1) The processing chamber of claim 1, wherein the chamber body comprises a plurality of processing volumes, and wherein each of the plurality of processing volumes is isolated from one another. ### Claim 11 A processing chamber for depositing a film on a substrate, comprising: a chamber body comprising a chamber lid, a chamber bottom, and one or more chamber walls which define a processing volume; a heater, movably disposed in the processing volume, the heater comprising: a stem; and a ceramic heater plate disposed on the stem, the ceramic heater plate comprising a first heating zone and a second heating zone circumscribing the first heating zone and further comprising one or more heating coils configured to heat the first heating zone to a first temperature and the second heating zone to a second temperature; and a gas distribution assembly disposed in the processing volume, comprising: a blocker plate disposed in the processing volume between the ceramic heater plate and the chamber lid, the blocker plate comprising a circular first inner region and an annular first outer region circumscribing the circular first inner region, wherein the circular first inner region and the annular first outer region each have a first plurality of openings formed therethrough, and wherein a density of openings in the circular first inner region is greater than a density of openings in the annular first outer region; and a showerhead disposed in the processing volume between the blocker plate and the ceramic heater plate, the showerhead comprising a circular second inner region and an annular second outer region circumscribing the circular second inner region, wherein the circular second inner region and the annular second outer region each have a second plurality of openings formed therethrough, wherein a density of openings in the circular second inner region is greater than a density of openings in the annular second outer region, and wherein a diameter of the circular first inner region of the blocker plate substantially corresponds to a diameter of the circular second inner region of the showerhead. ### Claim 12 (depends on 11) The processing chamber of claim 11, wherein the ceramic heater plate comprises between about two and about twenty heating zones. ### Claim 13 (depends on 11) The processing chamber of claim 11, wherein the second heating zone is between about 90 mm and about 140 mm from a center axis of the heater. ### Claim 14 (depends on 11) The processing chamber of claim 11, further comprising a shadow ring configured to support a substrate. ### Claim 15 (depends on 11) The processing chamber of claim 11, wherein an outer diameter of the annular second outer region of the showerhead substantially corresponds to a diameter of a substrate to be processed in the processing chamber. ### Claim 16 (depends on 11) The processing chamber of claim 11, wherein the chamber body comprises a plurality of processing volumes, and wherein each of the plurality of processing volumes is isolated from one another. ### Claim 17 A processing chamber for depositing a film on a substrate, comprising: a chamber body comprising a chamber lid, a chamber bottom, and one or more chamber walls which define a processing volume; a heater, movably disposed in the processing volume, the heater comprising: a stem; and a ceramic heater plate disposed on the stem, the ceramic heater plate comprising a first heating zone and a second heating zone circumscribing the first heating zone and further comprising one or more heating coils configured to heat the first heating zone to a first temperature and the second heating zone to a second temperature, wherein the second heating zone is between about 90 mm and about 140 mm from a center axis of the heater; and a gas distribution assembly disposed in the processing volume, comprising: a blocker plate disposed in the processing volume between the ceramic heater plate and the chamber lid, the blocker plate comprising a circular first inner region and an annular first outer region circumscribing the circular first inner region, wherein the circular first inner region and the annular first outer region each include a first plurality of openings formed therethrough, and wherein a density of openings in the circular first inner region is greater than a density of openings in the annular first outer region; and a showerhead disposed in the processing volume between the blocker plate and the ceramic heater plate, the showerhead comprising a circular second inner region and an annular second outer region circumscribing the circular second inner region, wherein the circular second inner region and the annular second outer region each include a second plurality of openings formed therethrough, wherein a density of openings in the circular second inner region is greater than a density of openings in the annular second outer region, wherein a diameter of the circular first inner region of the blocker plate substantially corresponds to a diameter of the circular second inner region of the showerhead, and wherein an outer diameter of the annular second outer region of the showerhead substantially corresponds to a diameter of a substrate to be processed in the processing chamber. ### Claim 18 (depends on 17) The processing chamber of claim 17, wherein the chamber body comprises a plurality of processing volumes, and wherein each of the plurality of processing volumes is isolated from one another.