# US 10,373,821 B2 · Substrate processing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,373,821 B2 - Document ID: US10373821B2 - Status: Granted - Kind: B2 - Application number: 15/531,734 - Filed: 2015-12-07 - Published: 2017-11-30 - Granted: 2019-08-06 - Earliest claimed: 2014-12-08 - Assignees: Jusung Engineering Co., Ltd. - Applicants: Jusung Engineering Co., Ltd. - Inventors: Seung Chul Shin; Jin Hyuk Yoo; Min Ho Cheon; Chul-Joo Hwang - Web page: https://patentgrep.com/patent/US10373821B2 ## CPC - H10P 14/6336: {in the presence of a plasma [PECVD]} - C23C 16/402: {Silicon dioxide} - C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - C23C 16/56: After-treatment - H01J 37/3244: {Gas supply means} - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals. ## Claims ### Claim 1 A substrate processing method comprising: injecting a gas including a source material containing silicon towards substrates received in a reaction chamber; depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films; and executing surface treatment on the deposition films by injecting plasma gas including oxygen radicals, wherein the substrates include gaps receiving the deposition films therein, and wherein, the surface treatment is executed on the deposition films on inner surfaces of the gaps and on outer surfaces at a vicinity of the gaps, and wherein, in the execution of the surface treatment, the plasma gas is injected more to react with the deposition films on upper parts of the inner surfaces than with the deposition films on lower parts of the inner surfaces so that the deposition films formed on the lower parts of the inner surfaces are thicker than the deposition films formed on the upper parts of the inner surfaces. ### Claim 2 (depends on 1) The substrate processing method according to claim 1, further comprising firstly judging whether or not the deposition films are formed to a predetermined thickness, after deposition. ### Claim 3 (depends on 2) The substrate processing method according to claim 2, further comprising firstly purging the inside of the reaction chamber by injecting purge gas into the reaction chamber, upon judging that the deposition films are formed to the predetermined thickness, after first judgment. ### Claim 4 (depends on 2) The substrate processing method according to claim 2, wherein, in first judgment, if the thickness of the deposition films is less than the predetermined thickness, the substrate processing method returns to injection. ### Claim 5 (depends on 1) The substrate processing method according to claim 1, further comprising, after surface treatment: secondarily purging the inside of the reaction chamber by injecting purge gas into the reaction chamber; and secondarily judging whether or not the deposition films form a plurality of layers in a predetermined number. ### Claim 6 (depends on 5) The substrate processing method according to claim 5, wherein, in second judgment, if the number of layers formed by the deposition films is less than the predetermined number, the substrate processing method returns to injection. ### Claim 7 (depends on 1) The substrate processing method according to claim 1, wherein the source material forms a silicon oxide and the deposition films are silicon oxide films. ### Claim 8 (depends on 1) The substrate processing method according to claim 1, wherein, in deposition, the deposition films are formed on the substrates using thermal deposition. ### Claim 9 (depends on 8) The substrate processing method according to claim 8, wherein the plasma is formed using at least one of O2 and O3. ### Claim 10 (depends on 1) The substrate processing method according to claim 1, wherein, in execution of surface treatment, the deposition films shrink so that the density of the deposition films is increased. ### Claim 11 (depends on 10) The substrate processing method according to claim 10, wherein execution of surface treatment is repeated until the deposition films reach predetermined density and step coverage. ### Claim 12 (depends on 1) The substrate processing method according to claim 1, wherein the deposition films form a plurality of layers on the surfaces of the gaps to fill the gaps by executing injection, deposition and surface treatment. ### Claim 13 (depends on 1) The substrate processing method according to claim 1, wherein the substrates provided in plural are processed within one reaction chamber. ### Claim 14 (depends on 13) The substrate processing method according to claim 13, wherein the reaction chamber includes: a substrate support unit rotated and having a plurality of substrates symmetrically mounted thereon; a lid spaced from an upper surface of the substrate support unit; gas injection units installed on the lid; and a plasma generation unit installed on the lid so as to be separated from the gas injection units. ### Claim 15 (depends on 14) The substrate processing method according to claim 14, wherein the gas injection units include: a first injection unit configured to inject the gas including the source material; and a second injection unit configured to divide the space of the reaction chamber and to inject gas for purging the reaction chamber. ### Claim 16 (depends on 1) The substrate processing method according to claim 1, wherein the deposition films formed on the lower parts of the inner surfaces are thicker than the deposition films formed on the outer surfaces.