# US 10,373,819 B2 · Method for processing substrate

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- Number: US 10,373,819 B2
- Document ID: US10373819B2
- Status: Granted
- Kind: B2
- Application number: 15/886,859
- Filed: 2018-02-02
- Published: 2019-05-16
- Granted: 2019-08-06
- Earliest claimed: 2017-11-16
- Assignees: Chunghwa Picture Tubes, Ltd.
- Applicants: Chunghwa Picture Tubes, LTD.
- Inventors: Hsi-Ming Chang; Shin-Chuan Chiang; Yen-Yu Huang
- Web page: https://patentgrep.com/patent/US10373819B2

## CPC

- H10P 70/80: {Cleaning only by supercritical fluids}
- B08B 7/0021: {by liquid gases or supercritical fluids}
- H10P 72/0404: {for general liquid treatment, e.g. etching followed by cleaning}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL

## Abstract

A processing method of a substrate is provided. The substrate is processed by a substrate processing apparatus. The substrate processing apparatus includes a reaction chamber and a secondary chamber surrounding the reaction chamber. The processing method includes: placing the substrate in the reaction chamber; performing a process to increase a pressure in the reaction chamber and a pressure in the secondary chamber, such that the pressure in the secondary chamber is between an atmospheric pressure and the pressure in the reaction chamber; increasing a temperature in the reaction chamber; and processing the substrate by a supercritical fluid in the reaction chamber.

## Claims

### Claim 1

A processing method of a substrate, wherein the substrate is processed by a substrate processing apparatus, and the substrate processing apparatus comprises a reaction chamber and a secondary chamber surrounding the reaction chamber, the method comprising:
placing the substrate in the reaction chamber;
performing a process to increase a pressure in the reaction chamber and a pressure in the secondary chamber, such that the pressure in the secondary chamber is between an atmospheric pressure and the pressure in the reaction chamber and performing at least one cycle of steps which comprise:
supplying a supercritical fluid and a reaction material into the reaction chamber, so as to increase the pressure in the reaction chamber; and
increasing the pressure in the secondary chamber;
increasing a temperature in the reaction chamber; and
processing the substrate by using the supercritical fluid in the reaction chamber.

### Claim 2 (depends on 1)

The processing method according to claim 1, wherein the substrate processing apparatus further comprises:
a reaction chamber supply port and a reaction chamber discharge port which are respectively connected with the reaction chamber; and
a secondary chamber supply port and a secondary chamber discharge port which are respectively connected with the secondary chamber.

### Claim 3 (depends on 2)

The processing method according to claim 2, wherein the supercritical fluid and the reaction material pass through the reaction chamber supply port to be supplied into the reaction chamber.

### Claim 4 (depends on 2)

The processing method according to claim 2, wherein air is supplied into the secondary chamber through the secondary chamber supply port to increase the pressure in the secondary chamber.

### Claim 5 (depends on 1)

The processing method according to claim 1, wherein after the step of processing the substrate by using the supercritical fluid in the reaction chamber, the method further comprises:
reducing the temperature in the reaction chamber;
reducing the pressure in the reaction chamber and the pressure, in the secondary chamber; and
taking the processed substrate out of the reaction chamber.

### Claim 6 (depends on 5)

The processing method according to claim 5, wherein the remaining supercritical fluid and the remaining reaction material are discharged from the reaction chamber to reduce the pressure in the reaction chamber.

### Claim 7 (depends on 5)

The processing method according to claim 5, wherein the pressure in the reaction chamber is kept greater than the pressure in the secondary chamber during the process of reducing the pressure in the reaction chamber and the pressure in the secondary chamber.

### Claim 8 (depends on 1)

The processing method according to claim 1, wherein after the process of increasing the pressure in the reaction chamber and the pressure in the secondary chamber is performed, the pressure in the secondary chamber is between ¼ of the pressure in the reaction chamber and ¾ of the pressure in the reaction chamber.

### Claim 9 (depends on 1)

The processing method according to claim 1, wherein the number of the reaction chamber is plural.

### Claim 10 (depends on 1)

The processing method according to claim 1, wherein the number of the secondary chamber is plural.