System for tunable workpiece biasing in a plasma reactor

A system for tunable workpiece biasing, comprising:

• a plasma chamber that performs plasma processing on a workpiece:
• a first pulsed voltage source using DC voltages, coupled directly to the workpiece in the plasma chamber via at least one direct connection, the at least one direct connection enabling ion energy control in the workpiece near the at least one direct connection;
• a second pulsed voltage source, coupled capacitively to the workpiece;
• and
• a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, the biasing controller is configured to independently control the first pulsed voltage source and the second pulsed voltage source based on one or more voltage parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece, wherein the first pulsed voltage source supplies a first pulse at high voltage, wherein the maximum of the high voltage during a first pulse is approximately in the range of 1 to 10 kV and wherein the second pulsed voltage source supplies a second pulse comprising one or more voltages in a continuous range of low to medium voltages, wherein the range is greater than 0 to approximately 1.5 kV.

A method for tunable workpiece biasing in a plasma chamber comprising:

• generating a high voltage by a first pulsed voltage source using DC voltages and coupling the high voltage to a workpiece in a plasma chamber via at least one direct connection, the at least one direct connection enabling ion energy control in the workpiece near the at least one direct connection;
• generating one or more of low and medium voltages by a second pulsed voltage source;
• coupling, capacitively, the one or more of low and medium voltages to the workpiece;
• and
• pulsing the high voltage and the one or more of low and medium voltages by a biasing controller according to, one or more voltage parameters of the first pulsed voltage source and the second pulsed voltage source to tailor ion distribution in the workpiece, the biasing controller adjusting the first and second pulsed voltage sources in combination to achieve a configurable ion energy distribution in the workpiece.

A method for tunable workpiece biasing in a plasma chamber comprising:

• generating a high voltage by a first pulsed voltage source and coupling the high voltage to a workpiece in a plasma chamber;
• generating one or more of low and medium voltages by a second pulsed voltage source;
• coupling, capacitively, the one or more of low and medium voltages to the workpiece;
• and
• pulsing the high voltage and the one or more of low and medium voltages by a biasing controller according to, one or more voltage parameters of the first pulsed voltage source and the second pulsed voltage source to tailor ion distribution in the workpiece;
• wherein the first pulsed voltage source supplies a high voltage, the maximum of the high voltage during a pulse being approximately 1 to 10 kV, and wherein the second pulsed voltage source supplies one or more voltages in a continuous range of low to medium voltages, wherein the range is greater than 0 to approximately 1.5 kV.