# US 10,373,679 B1 · Electronic device and method for reading data of resistive memory cell including drift recovery > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,373,679 B1 - Document ID: US10373679B1 - Status: Granted - Kind: B1 - Application number: 15/604,562 - Filed: 2017-05-24 - Granted: 2019-08-06 - Earliest claimed: 2016-05-24 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Woo-Tae Lee; Seok-Man Hong; Myoung-Sub Kim; Tae-Hoon Kim; Hyun-Jeong Kim - Web page: https://patentgrep.com/patent/US10373679B1 ## CPC - G11C 13/004: {Reading or sensing circuits or methods} - G06F 3/061: {Improving I/O performance} - G06F 3/0659: {Command handling arrangements, e.g. command buffers, queues, command scheduling} - G06F 3/0679: {Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]} - G11C 13/0004: {comprising amorphous/crystalline phase transition cells} - G11C 13/003: {Cell access} - G11C 13/0035: {Evaluating degradation, retention or wearout, e.g. by counting writing cycles} - G11C 13/047: {using electro-optical elements (G11C13/042 takes precedence)} - G11C 2013/0042: {Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]} - G11C 2013/005: {Read using potential difference applied between cell electrodes} - G11C 2013/0052: {Read process characterized by the shape, e.g. form, length, amplitude of the read pulse} - G11C 2213/76: Array using an access device for each cell which being not a transistor and not a diode - G11C: STATIC STORES (semiconductor memory devices H10B) - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) ## Abstract A method for reading data of a memory cell including a resistive memory element having a low resistance state and a high resistance state according to stored data and a selection element may include applying a recovery voltage to both ends of the memory cell, and applying a read voltage to both ends of the memory cell and sensing the data. The recovery voltage may be equal to or more than a second voltage obtained by adding a drift value of the memory cell to a first voltage for turning on the memory cell in a case in which the resistive memory element is in the low resistance state. ## Claims ### Claim 1 A method for reading data of a memory cell, the method comprising: applying a recovery voltage to first and second ends of the memory cell; and applying a read voltage to the first and second ends of the memory cell in order to sense the data after applying the recovery voltage to the first and second ends of the memory cell, wherein the memory cell comprises a resistive memory element and a selection element that are connected in series, the resistive memory element configured to have a low resistance state and a high resistance state according to data stored in the memory cell, wherein the recovery voltage is equal to or greater than a second voltage obtained by adding a drift amount of a first voltage of the memory cell to the first voltage, the first voltage corresponding to a threshold voltage for turning on the memory cell when the resistive memory element is in the low resistance state, the drift amount being generated by a drift phenomenon occurring in the memory cell, and wherein the recovery voltage is smaller than a third voltage corresponding to a threshold voltage for turning on the memory cell when the resistive memory element is in the high resistance state, such that a drift of the memory cell when the resistive memory element is in the high resistance state is not compensated. ### Claim 2 (depends on 1) The method of claim 1, wherein the read voltage is larger than the first voltage and is smaller than the third voltage. ### Claim 3 (depends on 1) The method of claim 1, wherein the recovery voltage is equal to or greater than a highest value in a distribution of the second voltages of memory cells in a cell array including the memory cell, and is smaller than a lowest value of a distribution of the third voltages of the memory cells in the cell array. ### Claim 4 (depends on 3) The method of claim 3, wherein the read voltage is larger than a highest value in a distribution of the first voltages of the memory cells in the cell array, and is smaller than the lowest value of the distribution of the third voltages of the memory cells in the cell array. ### Claim 5 (depends on 1) The method of claim 1, wherein the selection element has a snapback characteristic such that a voltage level at the first and second ends of the memory cell is rapidly reduced. ### Claim 6 (depends on 1) The method of claim 1, wherein the selection element includes an OTS (Ovonic Threshold Switch) element. ### Claim 7 (depends on 1) The method of claim 1, wherein, in the applying of the recovery voltage, the recovery voltage is controlled to limit an amount of current flowing through the memory cell so that the data stored in the memory cell is not changed. ### Claim 8 (depends on 1) The method of claim 1, wherein, in the applying of the recovery voltage, an application time period of the recovery voltage is equal to or less than a set time period after which the data stored in the memory cell is not changed. ### Claim 9 An electronic device including a semiconductor memory, wherein the semiconductor memory comprises: a memory cell including a resistive memory element and a selection element, the resistive memory element configured to have a low resistance state and a high resistance state according to data stored in the memory cell, the selection element coupled serially to the resistive memory element, wherein in order to read the data stored in the memory cell, a recovery voltage is applied to first and second ends of the memory cell, and then a read voltage is applied to the first and second ends of the memory cell, wherein the recovery voltage is equal to or greater than a second voltage obtained by adding a drift amount of a first voltage of the memory cell to the first voltage, the first voltage corresponding to a threshold voltage for turning on the memory cell when the resistive memory element is in the low resistance state, the drift amount being generated by a drift phenomenon that occurred in the memory cell, and wherein the recovery voltage is smaller than a third voltage corresponding to a threshold voltage for turning on the memory cell when the resistive memory element is in the high resistance state, such that a drift of the memory cell when the resistive memory element is in the high resistance state is not compensated. ### Claim 10 (depends on 9) The electronic device of claim 9, wherein the read voltage is larger than the first voltage and is smaller than the third voltage. ### Claim 11 (depends on 9) The electronic device of claim 9, wherein the recovery voltage is equal to or greater than a highest value in a distribution of the second voltages of memory cells in a cell array including the memory cell, and is smaller than a lowest value in a distribution of the third voltages of the memory cells in the cell array. ### Claim 12 (depends on 11) The electronic device of claim 11, wherein the read voltage is larger than a highest value in a distribution of the first voltages of the memory cells in the cell array, and is smaller than the lowest value in the distribution of the third voltages of the memory cells in the cell array. ### Claim 13 (depends on 9) The electronic device of claim 9, wherein the selection element has a snapback characteristic such that a voltage level at the first and second ends of the memory cell is rapidly reduced. ### Claim 14 (depends on 9) The electronic device of claim 9, wherein the selection element includes an OTS (Ovonic Threshold Switch) element. ### Claim 15 (depends on 9) The electronic device of claim 9, wherein when the recovery voltage is applied, the recovery voltage is controlled to limit an amount of current flowing through the memory cell so that the data stored in the memory cell is not changed. ### Claim 16 (depends on 9) The electronic device of claim 9, wherein when the recovery voltage is applied, an application time period of the recovery voltage is equal to or less than a set time period after which the data stored in the memory cell is not changed. ### Claim 17 (depends on 9) The electronic device according to claim 9, further comprising a microprocessor which includes: a control unit that is configured to receive a signal including a command from an outside of the microprocessor, and performs extracting, decoding of the command, or controlling input or output of a signal of microprocessor; an operation unit configured to perform an operation based on a result that the control unit decodes the command; and a memory unit configured to store data for performing the operation, data corresponding to a result of performing the operation, or an address of data for which the operation is performed, wherein the semiconductor memory that includes the resistance memory element is part of the memory unit in the microprocessor. ### Claim 18 (depends on 9) The electronic device according to claim 9, further comprising a processor which includes: a core unit configured to perform, based on a command inputted from an outside of the processor, an operation corresponding to the command, by using data; a cache memory unit configured to store data for performing the operation, data corresponding to a result of performing the operation, or an address of data for which the operation is performed; and a bus interface connected between the core unit and the cache memory unit, and configured to transmit data between the core unit and the cache memory unit, wherein the semiconductor memory that includes the resistance memory element is part of the cache memory unit in the processor. ### Claim 19 (depends on 9) The electronic device according to claim 9, further comprising a processing system which includes: a processor configured to decode a command received by the processor and control an operation for information based on a result of decoding the command; an auxiliary memory device configured to store a program for decoding the command and the information; a main memory device configured to call and store the program and the information from the auxiliary memory device such that the processor can perform the operation using the program and the information when executing the program; and an interface device configured to perform communication between the processor, the auxiliary memory device or the main memory device and the outside, wherein the semiconductor memory that includes the resistance memory element is part of the auxiliary memory device or the main memory device in the processing system. ### Claim 20 (depends on 9) The electronic device according to claim 9, further comprising a data storage system which includes: a storage device configured to store data and conserve stored data regardless of power supply; a controller configured to control input and output of data to and from the storage device according to a command inputted form an outside; a temporary storage device configured to temporarily store data exchanged between the storage device and the outside; and an interface configured to perform communication between at least one of the storage device, the controller and the temporary storage device and the outside, wherein the semiconductor memory that includes the resistance memory element is part of the storage device or the temporary storage device in the data storage system. ### Claim 21 (depends on 9) The electronic device according to claim 9, further comprising a memory system which includes: a memory configured to store data and conserve stored data regardless of power supply; a memory controller configured to control input and output of data to and from the memory according to a command inputted form an outside; a buffer memory configured to buffer data exchanged between the memory and the outside; and an interface configured to perform communication between at least one of the memory, the memory controller and the buffer memory and the outside, wherein the semiconductor memory that includes the resistance memory element is part of the memory or the buffer memory in the memory system.