# US 10,373,677 B2 · Semiconductor device to reduce energy consumed to write data

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- Number: US 10,373,677 B2
- Document ID: US10373677B2
- Status: Granted
- Kind: B2
- Application number: 15/737,374
- Filed: 2016-06-09
- Published: 2018-07-12
- Granted: 2019-08-06
- Earliest claimed: 2015-06-24
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Kimiyoshi Usami; Masaru Kudo
- Web page: https://patentgrep.com/patent/US10373677B2

## CPC

- G11C 11/419: Read-write [R-W] circuits
- G11C 5/14: Power supply arrangements {, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels}
- G11C 5/143: {Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels (G11C5/148 takes precedence); Switching between alternative supplies (G11C5/141 takes precedence)}
- G11C 11/15: using multiple magnetic layers (G11C11/155 takes precedence)
- G11C 11/412: using field-effect transistors only
- G11C 11/417: for memory cells of the field-effect type
- H10N 50/10: Magnetoresistive devices
- G11C 2213/54: Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

This invention relates to a semiconductor device that reduces energy consumed to write data to a nonvolatile storing section. A write control circuit 34 stores the same data as that held in MTJ elements MTJ1 and MTJ2. In a store operation storing the data held in a slave latch 32 into the MTJ elements MTJ1 and MTJ2, the write control circuit 34 compares the data stored therein with the data held in the slave latch 32 to control whether or not to write the data to the MTJ elements MTJ1 and MTJ2. If the internally stored data coincides with the data held in the slave latch 32, the write control circuit 34 performs control not to write the data to the MTJ elements MTJ1 and MTJ2.

## Claims

### Claim 1

A semiconductor device comprising:
a flip-flop;
a nonvolatile storing section configured to store data held in the flip-flop; and
a write control section configured to perform control to write the data held in the flip-flop to the nonvolatile storing section if, with supply of a source voltage or a ground voltage to the own device cut off, the data stored in the nonvolatile storing section does not coincide with the data held in the flip-flop, the write control section further performing control not to write the data held in the flip-flop to the nonvolatile storing section if the data stored in the nonvolatile storing section coincides with the data held in the flip-flop, wherein the write control section retains the data stored in the nonvolatile storing section, and performs the control based on a result of a comparison between the retained data and the data held in the flip-flop.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a first switch element configured to switch connection and disconnection between the flip-flop and the nonvolatile storing section,
wherein the write control section causes the first switch element to connect the flip-flop with the nonvolatile storing section when performing control to write the data, the write control section further causing the first switch element to disconnect the flip-flop from the nonvolatile storing section when performing control not to write the data.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a restoring section configured to restore the data written to the nonvolatile storing section in accordance with an externally input restoration control signal in order to restore the data written to the nonvolatile storing section upon resumption of the supply of the source voltage or the ground voltage previously cut off to the own device.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein the restoring section includes a second switch element configured to switch connection and disconnection between the flip-flop and the nonvolatile storing section in accordance with the restoration control signal.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the nonvolatile storing section is a magnetic tunnel junction element.