Optical recording medium
AssigneeSony Corporation
InventorMasatsugu Suwabe
Life of this patent
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Abstract
An optical recording medium includes a plurality of information signal layers, and at least one of the plurality of information signal layers other than the farthest information signal layer from a light irradiation surface includes: a recording layer; a first dielectric layer provided on a side opposite to a light incident side of the recording layer; and a second dielectric layer provided on the light incident side of the recording layer. The first dielectric layer and the second dielectric layer include indium oxide and tin oxide, and the atomic concentration of tin in the first dielectric layer is higher than the atomic concentration of tin in the second dielectric layer.
Claims8
An optical recording medium comprising a plurality of information signal layers, wherein
- at least one of the plurality of information signal layers other than the farthest information signal layer from a light irradiation surface includes:
- a recording layer;
- a first dielectric layer provided on a side opposite to a light incident side of the recording layer;
- and
- a second dielectric layer provided on the light incident side of the recording layer,
- the first dielectric layer and the second dielectric layer include indium oxide and tin oxide, and
- an atomic concentration of tin in the first dielectric layer is higher than an atomic concentration of tin in the second dielectric layer.
An optical recording medium comprising a plurality of information signal layers, wherein
- at least one of the plurality of information signal layers other than the farthest information signal layer from a light irradiation surface includes:
- a recording layer;
- a first dielectric layer provided on a side opposite to a light incident side of the recording layer;
- and
- a second dielectric layer provided on the light incident side of the recording layer,
- the first dielectric layer and the second dielectric layer include indium oxide and tin oxide, and
- an atomic concentration of tin in the first dielectric layer in the vicinity of an interface on the light incident side is higher than an atomic concentration of tin in the second dielectric layer.
Dependencies are inferred from the claim text.