# US 10,372,274 B2 · Semiconductor device and touch panel

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- Number: US 10,372,274 B2
- Document ID: US10372274B2
- Status: Granted
- Kind: B2
- Application number: 15/091,295
- Filed: 2016-04-05
- Published: 2016-10-13
- Granted: 2019-08-06
- Earliest claimed: 2015-04-13
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Hajime Kimura; Masami Jintyou; Yasuharu Hosaka; Naoto Goto; Takahiro Iguchi; Daisuke Kurosaki; Junichi Koezuka
- Web page: https://patentgrep.com/patent/US10372274B2

## CPC

- G06F 3/0412: {Digitisers structurally integrated in a display}
- G06F 3/04184: {Synchronisation with the driving of the display or the backlighting unit to avoid interferences generated internally}
- G06F 3/0446: {using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/80: characterised by the materials
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10K 59/40: OLEDs integrated with touch screens
- G06F 2203/04103: Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

## Claims

### Claim 1

A semiconductor device comprising:
a transistor;
a second insulating film; and
a touch sensor,
wherein the transistor comprises:
a gate electrode;
a gate insulating film in contact with the gate electrode;
a first oxide semiconductor film that is in contact with the gate insulating film and overlaps with the gate electrode;
a source electrode and a drain electrode that are electrically connected to the first oxide semiconductor film;
a first insulating film over the first oxide semiconductor film, the source electrode, and the drain electrode; and
a second oxide semiconductor film that is over the first insulating film and overlaps with the first oxide semiconductor film,
wherein the second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film,
wherein the touch sensor comprises:
a first electrode; and
a second electrode,
wherein one of the first electrode and the second electrode comprises a third oxide semiconductor film, and
wherein the second oxide semiconductor film and the third oxide semiconductor film are formed in the same layer.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein each thickness of the second oxide semiconductor film and the third oxide semiconductor film is greater than or equal to 30 nm and less than or equal to 70 nm.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film are each an In-M-Zn oxide, and
wherein M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1,
wherein the first insulating film comprises oxygen, and
wherein the second insulating film comprises hydrogen.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, further comprising a capacitor that comprises the second insulating film between a pair of electrodes,
wherein the capacitor transmits visible light, and
wherein one of the pair of electrodes of the capacitor comprises the third oxide semiconductor film.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein the first electrode and the second electrode each comprise the third oxide semiconductor film.

### Claim 7 (depends on 5)

A touch panel comprising:
the semiconductor device according to claim 5;
a conductive film; and
a liquid crystal element,
wherein the conductive film serves as a pixel electrode,
wherein the third oxide semiconductor film serves as a common electrode, and
wherein the other of the pair of electrodes of the capacitor comprises the conductive film.

### Claim 8 (depends on 5)

A touch panel comprising:
the semiconductor device according to claim 5;
a conductive film; and
a liquid crystal element,
wherein the third oxide semiconductor film serves as a pixel electrode,
wherein the conductive film serves as a common electrode, and
wherein the other of the pair of electrodes of the capacitor comprises the conductive film.

### Claim 9 (depends on 1)

A touch panel comprising:
the semiconductor device according to claim 1; and
a light-emitting element,
wherein the light-emitting element comprises:
a lower electrode;
an upper electrode; and
an EL layer positioned between the lower electrode and the upper electrode.

### Claim 10 (depends on 9)

The touch panel according to claim 9, wherein the first electrode and the second electrode each comprise the third oxide semiconductor film.

### Claim 11 (depends on 9)

The touch panel according to claim 9, wherein the other of the first electrode and the second electrode serves as the upper electrode.

### Claim 12 (depends on 1)

An electronic device comprising:
the semiconductor device according to claim 1; and
a switch, a speaker, a display portion, or a housing.

### Claim 13 (depends on 7)

An electronic device comprising:
the touch panel according to claim 7; and
a switch, a speaker, a display portion, or a housing.

### Claim 14

A semiconductor device comprising:
a transistor comprising a gate electrode, a gate insulating film, and a first oxide semiconductor film between the gate electrode and the gate insulating film;
an insulating film over the transistor;
a touch sensor comprising a first electrode and a second electrode; and
a capacitor comprising the second electrode, a third electrode, and the insulating film between the second electrode and the third electrode,
wherein the capacitor transmits visible light, and
wherein the second electrode comprises a second oxide semiconductor film.

### Claim 15 (depends on 14)

The semiconductor device according to claim 14, wherein a thickness of the second oxide semiconductor film is greater than or equal to 30 nm and less than or equal to 70 nm.

### Claim 16 (depends on 14)

The semiconductor device according to claim 14, wherein the first oxide semiconductor film and the second oxide semiconductor film are each an In-M-Zn oxide, and
wherein M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

### Claim 17 (depends on 14)

The semiconductor device according to claim 14,
wherein the insulating film comprises hydrogen.

### Claim 18 (depends on 14)

A touch panel comprising:
the semiconductor device according to claim 14; and
a light-emitting element,
wherein the light-emitting element comprises:
a lower electrode;
an upper electrode; and
an EL layer positioned between the lower electrode and the upper electrode.

### Claim 19 (depends on 14)

An electronic device comprising:
the semiconductor device according to claim 14; and
a switch, a speaker, a display portion, or a housing.