# US 10,371,969 B2 · Electronic device

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- Number: US 10,371,969 B2
- Document ID: US10371969B2
- Status: Granted
- Kind: B2
- Application number: 15/671,369
- Filed: 2017-08-08
- Published: 2018-02-08
- Granted: 2019-08-06
- Earliest claimed: 2016-08-08
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Eun Joo Jang; Chil Hee Chung; Tae Hyung Kim; Jihyun Min; Hyo Sook Jang; Dae Young Chung
- Web page: https://patentgrep.com/patent/US10371969B2

## CPC

- G02F 1/01716: {Optically controlled superlattice or quantum well devices}
- C09K 11/00: Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K 11/70: containing phosphorus
- G02F 1/01725: {Non-rectangular quantum well structures, e.g. graded or stepped quantum wells}
- G02F 2/02: Frequency-changing of light, e.g. by quantum counters
- H05B 33/14: characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source}
- H10K 19/10: comprising field-effect transistors
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 50/30: Organic light-emitting transistors
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- G02F 1/01791: {Quantum boxes or quantum dots}
- G02F 1/3556: {Semiconductor materials, e.g. quantum wells}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.

## Claims

### Claim 1

An electronic device comprising:
an anode and a cathode facing each other;
a quantum dot emission layer disposed between the anode and the cathode and comprising a plurality of quantum dots; and
an excitation light emitting source,
wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength,
wherein the quantum dot emission layer and the excitation light emitting source are configured so that the excitation light emitting source provides the quantum dot emission layer with light having a second wavelength of about 300 nanometers to about 490 nanometers, and the plurality of quantum dots in the quantum dot emission layer are excited by the light of the second wavelength and emit light having a third wavelength which is greater than the second wavelength,
wherein the anode, the cathode, or a combination thereof is a light transmitting electrode,
wherein the light having the first wavelength and the light having the third wavelength are emitted through the light transmitting electrode,
wherein the excitation light emitting source comprises a light emitting transistor, and
the light emitting transistor comprises a gate electrode, a channel overlapping at least a portion of the gate electrode and comprising an electroluminescence material, an insulator disposed between the gate electrode and the channel, and a source electrode and a drain electrode electrically connected with the channel.

### Claim 2 (depends on 1)

The electronic device of claim 1, wherein the electronic device further comprises a first hole injection layer, a first hole transport layer, a first electron blocking layer, or a combination thereof disposed between the anode and the quantum dot emission layer, and
the electronic device further comprises a first electron injection layer, a first electron transport layer, a first hole blocking layer, or a combination thereof disposed between the cathode and the quantum dot emission layer.

### Claim 3 (depends on 1)

The electronic device of claim 1, wherein the excitation light emitting source is configured so that the light having the second wavelength passes through the light transmitting electrode before being provided to the quantum dot emission layer.

### Claim 4 (depends on 1)

The electronic device of claim 1, wherein the gate electrode is a reflecting electrode.

### Claim 5 (depends on 1)

The electronic device of claim 1, wherein the light having the first wavelength and the light having the third wavelength pass through the cathode,
the anode comprises a first surface and a second surface opposite the first surface,
the first surface of the anode faces the quantum dot emission layer, and
the light emitting transistor is disposed on the second surface of the anode.

### Claim 6 (depends on 5)

The electronic device of claim 5, wherein the light emitting transistor is configured so that charge transport occurs in a direction perpendicular to the first surface.

### Claim 7 (depends on 1)

The electronic device of claim 1, wherein the light having the first wavelength and the light having the third wavelength pass through the cathode,
the anode comprises a first surface and a second surface opposite the first surface,
the first surface of the anode faces the quantum dot emission layer, and
the second surface of the anode faces the channel of the light emitting transistor.

### Claim 8 (depends on 7)

The electronic device of claim 7, wherein the light emitting transistor is configured so that charge transport occurs in a direction horizontal to the first surface.

### Claim 9 (depends on 1)

The electronic device of claim 1, wherein the channel comprises a hole auxiliary layer facing the source electrode, an electron auxiliary layer facing the drain electrode, and an emission layer disposed between the hole auxiliary layer and the electron auxiliary layer and comprising the electroluminescence material.

### Claim 10 (depends on 9)

The electronic device of claim 9, wherein the hole auxiliary layer comprises a second hole injection layer, a second hole transport layer, a second electron blocking layer, or a combination thereof,
the electron auxiliary layer comprises a second electron injection layer, a second electron transport layer, a second hole blocking layer, or a combination thereof.

### Claim 11 (depends on 1)

A display device comprising the electronic device of claim 1.