# US 10,371,893 B2 · Hybrid interconnect device and method

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- Number: US 10,371,893 B2
- Document ID: US10371893B2
- Status: Granted
- Kind: B2
- Application number: 15/885,450
- Filed: 2018-01-31
- Published: 2019-05-30
- Granted: 2019-08-06
- Earliest claimed: 2017-11-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Chen-Hua Yu; Chuei-Tang Wang; Hsing-Kuo Hsia; Yu-Kuang Liao; Chih-Chieh Chang
- Web page: https://patentgrep.com/patent/US10371893B2

## CPC

- G02B 6/124: Geodesic lenses or integrated gratings
- G02B 6/12002: {Three-dimensional structures}
- G02B 6/12004: {Combinations of two or more optical elements}
- G02B 6/136: by etching
- G02B 6/43: Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
- H05K 1/0274: {Optical details, e.g. printed circuits comprising integral optical means (H05K1/0269 takes precedence; coupling light guides with opto-electronic components G02B6/42)}
- H05K 1/112: {directly combined with via connections}
- H05K 1/181: associated with surface mounted components
- H10P 72/74: {using temporarily an auxiliary support}
- H10W 70/095: {of vias therein}
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/685: comprising multiple insulating layers
- H10W 70/698: Semiconductor materials that are electrically insulating, e.g. undoped silicon
- H10P 72/7424: {used as a support during the manufacture of self-supporting substrates}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- H10W 72/01225: {in solid form, e.g. by using a powder or by stud bumping}
- H10W 72/01235: {by plating, e.g. electroless plating or electroplating}
- H10W 72/01236: {in solid form, e.g. by using a powder or by laminating a foil}
- H10W 72/01238: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/01257: {by reflowing}
- H10W 72/019: {of bond pads}
- H10W 72/07207: {Temporary substrates, e.g. removable substrates}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 80/011: {Manufacture or treatment of pads or other interconnections to be direct bonded}
- H10W 80/211: {using auxiliary members, e.g. aids for protecting the bonding area}
- H10W 80/301: {Bonding techniques, e.g. hybrid bonding}
- H10W 80/312: {characterised by the direct bonding of electrically conductive pads}
- H10W 80/327: {characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers}
- H10W 80/333: {Compression bonding}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/794: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In an embodiment, a method includes: forming an interconnect including waveguides and conductive features disposed in a plurality of dielectric layers, the conductive features including conductive lines and vias, the waveguides formed of a first material having a first refractive index, the dielectric layers formed of a second material having a second refractive index less than the first refractive index; bonding a plurality of dies to a first side of the interconnect, the dies electrically connected by the conductive features, the dies optically connected by the waveguides; and forming a plurality of conductive connectors on a second side of the interconnect, the conductive connectors electrically connected to the dies by the conductive features.

## Claims

### Claim 1

A method comprising:
patterning a portion of a substrate to form a waveguide, the substrate having a first surface and a second surface opposite the first surface;
depositing a first dielectric layer on the waveguide and the first surface of the substrate;
forming vias extending through the first dielectric layer;
depositing a plurality of second dielectric layers on the first dielectric layer;
forming a plurality of conductive features in the second dielectric layers, a first region of the second dielectric layers being free from the conductive features;
attaching a plurality of dies to the second dielectric layers, the dies being electrically connected to the conductive features, the dies being optically connected to the waveguide through the first region of the second dielectric layers;
thinning the second surface of the substrate to expose the vias; and
forming conductive connectors electrically connected to the vias.

### Claim 2 (depends on 1)

The method of claim 1, wherein the substrate is formed of a material having a first refractive index, and the first dielectric layer is formed of a material having a second refractive index less than the first refractive index.

### Claim 3 (depends on 1)

The method of claim 1 further comprising:
forming a laser source on the substrate, the waveguide extending continuously around the substrate, the laser source being optically coupled to the waveguide.

### Claim 4 (depends on 1)

The method of claim 1 further comprising:
forming recesses in the waveguide to define a grating coupler in the waveguide.

### Claim 5 (depends on 4)

The method of claim 4, wherein the conductive features are formed in a second region of the second dielectric layers, the first region of the second dielectric layers extending from the grating coupler to a top surface of the second dielectric layers.

### Claim 6 (depends on 1)

The method of claim 1, wherein the substrate comprises a contiguous semiconductor material, and wherein the patterning the portion of the substrate to form the waveguide comprises:
forming recesses in the contiguous semiconductor material, unrecessed portions of the contiguous semiconductor material forming the waveguide.

### Claim 7 (depends on 1)

The method of claim 1, wherein the substrate comprises a semiconductor material on an insulator layer, and wherein the patterning the portion of the substrate to form the waveguide comprises:
forming openings in the semiconductor material to expose the insulator layer, remaining portions of the semiconductor material forming the waveguide.

### Claim 8

A method comprising:
depositing a first dielectric layer around waveguides, the waveguides being formed of a first material having a first refractive index, the first dielectric layer being formed of a second material having a second refractive index less than the first refractive index;
forming a plurality of vias from a first side of the first dielectric layer to a second side of the first dielectric layer;
depositing a plurality of second dielectric layers on the first side of the first dielectric layer, the second dielectric layers being formed of the second material;
forming a plurality of conductive features in the second dielectric layers;
bonding a plurality of dies to the conductive features, the dies being electrically connected by the conductive features, the dies being optically connected by the waveguides; and
forming a plurality of conductive connectors on the second side of the first dielectric layer, the conductive connectors being electrically connected to the dies by the conductive features and the vias.

### Claim 9 (depends on 8)

The method of claim 8, wherein the waveguides comprise grating couplers, and wherein the second dielectric layers are substantially free of conductive features in regions extending between the grating couplers of the waveguides and respective photonic integrated circuits.

### Claim 10 (depends on 8)

The method of claim 8, wherein the bonding the plurality of dies to conductive features comprises:
bonding the plurality of dies to the conductive features with hybrid bonding.

### Claim 11 (depends on 8)

The method of claim 8, wherein the bonding the plurality of dies to the conductive features comprises:
bonding the plurality of dies to the conductive features with conductive connectors.

### Claim 12

A method comprising:
depositing a first dielectric layer around a waveguide, the first dielectric layer having a first side and a second side opposite the first side, the waveguide comprising a material having a first refractive index, the first dielectric layer comprising a material having a second refractive index;
forming a plurality of vias extending from the first side of the first dielectric layer to the second side of the first dielectric layer;
depositing a plurality of second dielectric layers adjacent the first side of the first dielectric layer, the second dielectric layers comprising a material having a third refractive index, the second refractive index and the third refractive index being less than the first refractive index;
forming a plurality of first conductive features in first regions of the second dielectric layers, second regions of the second dielectric layers being free from the first conductive features; and
forming a plurality of second conductive features adjacent the second side of the first dielectric layer, the vias electrically connecting the second conductive features to the first conductive features.

### Claim 13 (depends on 12)

The method of claim 12 further comprising:
providing a substrate comprising a contiguous semiconductor material; and
forming recesses in the contiguous semiconductor material, unrecessed portions of the contiguous semiconductor material forming the waveguide.

### Claim 14 (depends on 13)

The method of claim 13 further comprising:
thinning the substrate such that the second side of the first dielectric layer and a bottom surface of the waveguide are planar.

### Claim 15 (depends on 12)

The method of claim 12 further comprising:
providing a substrate comprising a semiconductor material on an insulator layer; and
forming openings in the semiconductor material to expose the insulator layer, remaining portions of the semiconductor material forming the waveguide.

### Claim 16 (depends on 15)

The method of claim 15, wherein after forming the vias, the vias further extend through the insulator layer.

### Claim 17 (depends on 12)

The method of claim 12 further comprising:
forming recesses in the waveguide to define a grating coupler in the waveguide, the first dielectric layer being further deposited in the recesses.

### Claim 18 (depends on 12)

The method of claim 12 further comprising:
attaching a plurality of dies to the second dielectric layers, a first subset of the dies being electrically interconnected by the first conductive features, a second subset of the dies being optically interconnected by the waveguide.

### Claim 19 (depends on 18)

The method of claim 18, wherein the first regions of the second dielectric layers are disposed between the first subset of the dies and the waveguide, and wherein the second regions of the second dielectric layers are disposed between the second subset of the dies and the waveguide.

### Claim 20 (depends on 18)

The method of claim 18 further comprising:
forming a laser source, the laser source being optically connected to each of the second subset of the dies.