# US 10,371,891 B2 · Integrated circuit with dielectric waveguide connector using photonic bandgap structure

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- Number: US 10,371,891 B2
- Document ID: US10371891B2
- Status: Granted
- Kind: B2
- Application number: 15/800,042
- Filed: 2017-10-31
- Published: 2019-05-02
- Granted: 2019-08-06
- Earliest claimed: 2017-10-31
- Assignees: Texas Instruments Incorporated
- Applicants: Texas Instruments Incorporated
- Inventors: Benjamin Stassen Cook; Daniel Lee Revier
- Web page: https://patentgrep.com/patent/US10371891B2

## CPC

- G02B 6/1225: {comprising photonic band-gap structures or photonic lattices}
- G02B 6/30: for use between fibre and thin-film device
- G02B 6/4214: {the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device (G02B6/4246 takes precedence)}
- G02B 6/4219: {Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor}
- H01P 1/2005: {Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]}
- H01P 3/16: Dielectric waveguides, i.e. without a longitudinal conductor
- H01P 5/087: {Transitions to a dielectric waveguide}
- H01P 11/006: {Manufacturing dielectric waveguides}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation}
- H10W 74/473: {containing a filler}
- G02B 2006/1213: {comprising photonic band-gap structures or photonic lattices}
- H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package}
- H10W 70/40: Leadframes
- H10W 72/321: {Structures or relative sizes of die-attach connectors}
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/331: {Shapes of die-attach connectors}
- H10W 72/351: {Materials of die-attach connectors}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H01P: WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)

## Abstract

An encapsulated integrated circuit package is provided that includes an integrated circuit (IC) die. A radio frequency (RF) circuit on the IC die is operable to send and/or receive an RF signal having a selected frequency. Encapsulation material encapsulates the IC die. A photonic waveguide couples to the RF circuit and extends to an external surface of the encapsulated IC. The photonic waveguide may be formed by a photonic bandgap structure within the encapsulation material. A socket may be included with the encapsulated package that is coupled to an end of the photonic waveguide opposite the RF circuit.

## Claims

### Claim 1

A device, comprising:
an integrated circuit including a radio frequency (RF) circuit;
a photonic waveguide coupled to the RF circuit, the photonic waveguide including a photonic structure that is: a photonic bandgap structure having a stop band; or a photonic resonant structure having a pass band; and
encapsulation material encapsulating the integrated circuit and the photonic waveguide, the photonic waveguide extending to a surface of the encapsulation material.

### Claim 2 (depends on 1)

The device of claim 1, further comprising a socket coupled to an end of the photonic waveguide opposite the RF circuit.

### Claim 3 (depends on 2)

The device of claim 2, wherein the socket is adapted to mate with a separate waveguide connector.

### Claim 4 (depends on 2)

The device of claim 2, wherein the socket is recessed into the encapsulation material.

### Claim 5 (depends on 2)

The device of claim 2, wherein the socket is positioned at the surface of the encapsulation material.

### Claim 6 (depends on 5)

The device of claim 5, wherein the surface is a top surface of the encapsulation material.

### Claim 7 (depends on 5)

The device of claim 5, wherein the surface is a side surface of the encapsulation material.

### Claim 8 (depends on 1)

The device of claim 1, further comprising a leadframe with a die attach pad, in which a portion of the photonic structure is between the integrated circuit and the die attach pad.

### Claim 9 (depends on 1)

The device of claim 1, wherein the photonic bandgap structure includes a matrix of periodically spaced nodes within the encapsulation material, the encapsulation material has a first intrinsic property, and the nodes have a second intrinsic property that is different from the first intrinsic property.

### Claim 10 (depends on 1)

The device of claim 1, wherein the photonic structure includes particles diffused within the encapsulation material, the encapsulation material has a first intrinsic property, and the particles have a second intrinsic property that is different from the first intrinsic property.

### Claim 11 (depends on 1)

The device of claim 1, further comprising an expanded launch structure coupled to the RF circuit.

### Claim 12

A method, comprising:
attaching an integrated circuit (IC) die to a leadframe, the IC die including a radio frequency (RF) circuit to send and/or receive an RF signal having a frequency; and
encapsulating the IC die to form an encapsulated package including a photonic structure within an encapsulation material, the photonic structure forming a photonic waveguide that couples to the RF circuit and extends to an external surface of the encapsulated package, the photonic structure being: a photonic bandgap structure having a stop band that includes the frequency; or a photonic resonant structure having a pass band that includes the frequency.

### Claim 13 (depends on 12)

The method of claim 12, wherein forming the photonic structure comprises forming a matrix of periodically spaced nodes within the encapsulation material, the encapsulation material has a first intrinsic property, and the nodes have a second intrinsic property that is different from the first intrinsic property.

### Claim 14 (depends on 13)

The method of claim 13, wherein forming the photonic bandgap structure comprises:
forming a first matrix of periodically spaced nodes within the encapsulation material having a first lattice constant; and
forming a second matrix of periodically spaced nodes within the encapsulation material having a second lattice constant.

### Claim 15 (depends on 12)

The method of claim 12, wherein forming the photonic structure comprises diffusing particles within the encapsulation material, the encapsulation material has a first intrinsic property, and the particles have a second intrinsic property that is different from the first intrinsic property.

### Claim 16

A device, comprising:
an integrated circuit including a radio frequency (RF) circuit;
a photonic bandgap (PBG) waveguide coupled to the RF circuit, the PBG waveguide including a multilayer PBG structure, the multilayer PBG structure including at least first and second layers in which: the first layer has a first photonic bandgap with a first frequency range; and the second layer has a second photonic bandgap with a second frequency range; and
encapsulation material encapsulating the integrated circuit and the PBG waveguide, the PBG waveguide extending to a surface of the encapsulation material.

### Claim 17 (depends on 16)

The device of claim 16, wherein the first photonic bandgap includes a frequency of an RF signal processable by the RF circuit.

### Claim 18 (depends on 16)

The device of claim 16, wherein the first layer includes a matrix of periodically spaced first nodes within the encapsulation material, the second layer includes a matrix of periodically spaced second nodes within the encapsulation material, the encapsulation material has a first intrinsic property, and an intrinsic property of the first nodes is different from the first intrinsic property and different from an intrinsic property of the second nodes.

### Claim 19 (depends on 16)

The device of claim 16, further comprising a socket coupled to an end of the PBG waveguide opposite the RF circuit.

### Claim 20 (depends on 16)

The device of claim 16, wherein the surface is a top surface of the encapsulation material.

### Claim 21 (depends on 16)

The device of claim 16, wherein the surface is a side surface of the encapsulation material.