# US 10,371,828 B2 · Scintillator using semiconductor quantum dots, manufacturing method thereof, and digital image diagnostic system employing the same

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- Number: US 10,371,828 B2
- Document ID: US10371828B2
- Status: Granted
- Kind: B2
- Application number: 15/992,060
- Filed: 2018-05-29
- Published: 2018-11-29
- Granted: 2019-08-06
- Earliest claimed: 2017-05-29
- Assignees: Korea Electronics Technology Institute
- Applicants: Korea Electronics Technology Institute
- Inventors: Chuljong Han; Jeongno Lee; Minsuk Oh; Byungwook Yoo
- Web page: https://patentgrep.com/patent/US10371828B2

## CPC

- G01T 1/2002: {Optical details, e.g. reflecting or diffusing layers}
- A61B 6/4208: {characterised by using a particular type of detector}
- G01T 1/1606: {with other specified detectors not provided for in the other subgroups of G01T1/16}
- G01T 1/20183: {Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk}
- G01T 1/24: with semiconductor detectors
- G21K 4/00: Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens (photographic processes using X-ray intensifiers G03C5/17; discharge tubes comprising luminescent screens H01J1/62; cathode ray tubes for X-ray conversion with optical output H01J31/50)
- A61B 6/4233: {using matrix detectors}
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)
- G21K: HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES

## Abstract

Disclosed are a scintillator using semiconductor quantum dots, a method of manufacturing the scintillator, and a digital image diagnostic system employing the scintillator. In one aspect, the scintillator includes a metallic reflection film made of a metal configured to transmit an X-ray and reflecting visible light and having a plurality of voids formed in a thickness direction. The scintillator also includes a polymer film formed inside the plurality of voids and being configured to include a plurality of columnar structures to convert the X-ray into the visible light. The scintillator further includes semiconductor quantum dots dispersed in the polymer film and having a decay time of tens of nanoseconds.

## Claims

### Claim 1

A scintillator using semiconductor quantum dots, comprising:
a metallic reflection film made of a metal, wherein the metallic reflection film is transmissive to an X-ray and reflective to a visible light, wherein the metallic reflection film comprises a plurality of voids formed in a thickness direction;
a polymer film comprising a plurality of columnar structures formed inside the plurality of voids of the metallic reflection film; and
semiconductor quantum dots dispersed in the plurality of columnar structures of the polymer film, the semiconductor quantum dots being configured to convert the X-ray into the visible light and having a decay time of tens of nanoseconds.

### Claim 2 (depends on 1)

The scintillator according to claim 1, further comprising:
an auxiliary metallic reflection film formed of the metal to block one end of the metallic reflection film corresponding to a direction in which the X-ray is incident so as to guide a travelling direction of the visible light after reflections inside the plurality of voids in the metallic reflection film.

### Claim 3 (depends on 1)

The scintillator according to claim 1, wherein a sectional dimension of each of the plurality of voids is getting larger from an end where the X-ray is incident toward an opposite direction.

### Claim 4 (depends on 1)

The scintillator according to claim 1, wherein the semiconductor quantum dots is made of a semiconductor material containing at least one element selected from a group consisting of: cadmium, mercury, lead, and tellurium.

### Claim 5

A digital image diagnostic system, comprising:
an X-ray tube configured to generate an X-ray;
a scintillator configured to convert the X-ray generated by the X-ray tube into visible light;
a photodiode configured to convert the visible light from the scintillator into an electrical signal;
a controller configured to generate a diagnostic image by using the electrical signal output by the photodiode; and
an output unit configured to output the diagnostic image generated by the controller,
wherein the scintillator comprises:
a metallic reflection film made of a metal, the metallic reflection film being transmissive to an X-ray and reflective to a visible light, the metallic reflection film comprising a plurality of voids formed in a thickness direction;
a polymer film comprising a plurality of columnar structures formed inside the plurality of voids of the metallic reflection film; and
semiconductor quantum dots dispersed in the plurality of columnar structures of the polymer film, the semiconductor quantum dots being configured to convert the X-ray into the visible light and having a decay time of tens of nanoseconds.

### Claim 6

A method of manufacturing a scintillator, comprising:
forming a metallic reflection film made of a metal, the metallic reflection film being transmissive to an X-ray and reflective to a visible light, the metallic reflection film comprising a plurality of voids formed in a thickness direction, and
forming an auxiliary metallic reflection film made of the metal to block one end of the metallic reflection film corresponding to a direction in which the X-ray is incident so as to guide a travelling direction of the visible light after reflections inside the plurality of voids; and
forming a polymer film having a plurality of columnar structures formed inside the plurality of voids of the metallic reflection film by immersing the metallic reflection film into a polymer liquid in which semiconductor quantum dots having a decay time of tens of nanoseconds are dispersed or by pouring the polymer liquid on the metallic reflection film such that the semiconductor quantum dots are dispersed inside the plurality of columnar structures.

### Claim 7 (depends on 6)

The method as claimed in claim 6, wherein the operation of forming the metallic reflection film and the auxiliary metallic reflection film comprises:
forming the plurality of voids while controlling depths of the plurality of voids so that the auxiliary metallic reflection film is formed at one side of the plurality of voids.

### Claim 8 (depends on 6)

The method as claimed in claim 6, wherein the operation of forming the metallic reflection film and the auxiliary metallic reflection film comprises:
performing a photolithography process and an etching process on the metal such that a sectional dimension of each of the plurality of voids is getting larger from an end where the X-ray is incident toward an opposite direction.

### Claim 9 (depends on 6)

The method as claimed in claim 6, wherein the operation of forming the metallic reflection film and the auxiliary metallic reflection film comprises:
preparing a substrate;
coating a photosensitive polymer material on the substrate;
performing a photolithography process to form the plurality of voids in the polymer material;
coating the metal on the polymer material in which the plurality of voids are formed; and
removing the substrate.

### Claim 10 (depends on 6)

The method as claimed in claim 6, wherein the operation of forming the metallic reflection film and the auxiliary metallic reflection film comprises:
preparing a substrate;
depositing the metal on the substrate;
performing a photolithography process and an etching process on the metal to form the plurality of voids in the metal; and
removing the substrate.

### Claim 11 (depends on 6)

The method as claimed in claim 6, wherein the operation of forming the polymer film comprises:
annealing the polymer liquid after the plurality of voids are filled with the polymer liquid.
