# US 10,371,745 B2 · Overheat protection circuit and method in an accelerated aging test of an integrated circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,371,745 B2 - Document ID: US10371745B2 - Status: Granted - Kind: B2 - Application number: 14/162,282 - Filed: 2014-01-23 - Published: 2015-07-23 - Granted: 2019-08-06 - Earliest claimed: 2014-01-23 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Ronny Schneider; Martin Brox; Juan-Antonio Ocon-Garrido - Web page: https://patentgrep.com/patent/US10371745B2 ## CPC - G01R 31/2855: {Environmental, reliability or burn-in testing} - G11C 7/04: with means for avoiding disturbances due to temperature effects - G11C 29/06: Acceleration testing - G11C 29/56: External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract To include in a device a controller to control operation of the device in a normal-operation mode and in a test mode for performing one or more tests including an accelerated aging test, a temperature sensor to measure operating temperature of the device, and an overheat protection circuit to prevent overheating of the memory device during the test mode. With this overheat protection circuit, a device may undergo an efficient and reliable accelerated aging test with reduced or non-existent, possibility of suffering an overheat damage. ## Claims ### Claim 1 An integrated circuit chip, comprising: a controller configured to control an operation of the integrated circuit chip in an accelerated aging test mode; and an over-temperature monitor circuit coupled to the controller and configured to detect an over-temperature of the integrated circuit chip and output a state indicating the over-temperature during the accelerated aging test mode, wherein the over-temperature monitor circuit includes: a temperature sensor configured to measure a temperature of the integrated circuit chip; a memory area configured to memorize a trigger point; a comparator circuit configured to compare the measured temperature and the trigger point, and to output a compared result; and a selector circuit configured to automatically select between a plurality of voltage levels to be used as an internal operating voltage based on the compared result from the comparator circuit, wherein the selector circuit is further configured to periodically check the compared result, and iteratively select a next lower of the plurality of voltages if the current temperature is above the trigger point or select a next higher of the plurality of voltages if the current temperature is below the trigger point. ### Claim 2 (depends on 1) The integrated circuit chip as claimed in claim 1, the integrated circuit chip further comprising: an internal voltage generator configured to produce the internal operating voltage responsive to the voltage level selected by the selector circuit, the selector circuit is configured to select a first voltage level or a second voltage level in the accelerated aging test mode, wherein the internal voltage generator is configured to produce a first voltage or a second voltage higher than the first voltage as the internal operating voltage responsive to the first voltage level or the second voltage level selected by the selector respectively, and further configured to reduce the internal operating voltage from the second voltage responsive to the voltage level selected by the selector circuit. ### Claim 3 (depends on 2) The integrated circuit chip as claimed in claim 2, wherein the selector circuit is further configured to select a third voltage level, wherein the internal voltage generator is further configured to produce a third voltage higher than the first voltage and lower than the second voltage as the internal operating voltage responsive to the third voltage level selected by the selector circuit, and the internal voltage generator is configured to reduce the internal operating voltage from the second voltage to the third voltage or to the first voltage, responsive to the voltage level selected by the selector circuit. ### Claim 4 (depends on 2) The integrated circuit chip as claimed in claim 2, wherein the internal voltage generator is configured to stop producing the internal operating voltage responsive to the compared result. ### Claim 5 (depends on 1) The integrated circuit chip as claimed in claim 1, wherein the controller sets the integrated circuit chip into a reset state based on the compared result. ### Claim 6 (depends on 1) The integrated circuit chip as claimed in claim 1, wherein the controller of the integrated circuit chip blocks an execution of a command input from outside of the integrated circuit chip, according to the compared result. ### Claim 7 (depends on 6) The integrated circuit chip as claimed in claim 6, further comprising: a buffer configured to receive the command input from the outside of the integrated circuit chip, and to transfer the command input to the controller, wherein the controller deactivates the buffer so as to block the transferring of the command input to the controller. ### Claim 8 (depends on 1) The integrated circuit chip as claimed in claim 1, the integrated circuit chip further comprising: a flag circuit configured to store the compared result, wherein the compared result stored in the flag circuit can be read out by an apparatus outside of the integrated circuit chip. ### Claim 9 (depends on 1) The integrated circuit chip as claimed in claim 1, the integrated circuit chip further comprising: a memory cell array including a plurality of memory cells wherein a refresh operation is performed to retain an information stored in the plurality of memory cells; a refresh period controller configured to control a refresh period of the refresh operation based on an output of the temperature sensor, the temperature sensor being shared with the refresh period controller in the test mode. ### Claim 10 (depends on 1) The apparatus of claim 1, wherein the controller is configured to provide the trigger point and the plurality of voltage levels to the over-temperature monitor circuit. ### Claim 11 A memory chip, comprising: a controller configured to control an operation of the memory chip in an accelerated aging test mode; a temperature sensor configured to measure a temperature of the memory chip: a comparator circuit configured to be activated during the accelerated aging test mode to compare the temperature of the memory chip during the accelerated aging test mode with a predetermined value and output a compared result; and a selector circuit configured to automatically select between a plurality of voltage levels to be used as an internal operating voltage based on the compared result from the comparator, wherein the selector circuit is further configured to periodically check the compared result, and iteratively select a next lower of the plurality of voltages if the current temperature is above the predetermined value or select a next higher of the plurality of voltages if the current temperature is below the predetermined value. ### Claim 12 A method of performing an accelerated aging test for an integrated circuit chip, the method comprising: entering the integrated circuit chip to the accelerated aging test by a tester coupled to the integrated circuit chip, wherein the integrated circuit chip includes a temperature monitor circuit and a selector circuit; monitoring a temperature of the integrated circuit chip by using the temperature monitor circuit while executing the accelerated aging test to produce a control signal within the integrated circuit chip based on a comparison of the monitored temperature to a trigger point; and automatically selecting a voltage level from a plurality of voltage levels for an operating voltage based on the control signal by using the selector circuit to control the temperature of the integrated circuit chip based on the control signal while executing the accelerated aging test, the automatically selectin comprising iteratively selecting a next lower of the plurality of voltages if control signal is in a first state or iteratively selecting a next higher of the plurality of voltages if the control signal is in a second state. ### Claim 13 (depends on 12) The method as claimed in claim 12, further comprising: changing a voltage level of a voltage generated inside of the integrated circuit chip that is used as an operating voltage of the integrated circuit chip using the selector circuit. ### Claim 14 (depends on 12) The method as claimed in claim 12, wherein the integrated circuit chip stops executing a command in the integrated circuit chip, based on the control signal, the command input provided from the tester. ### Claim 15 (depends on 12) The method as claimed in claim 12, wherein the tester stops supplying a command to the integrated circuit chip, based on the control signal. ### Claim 16 (depends on 12) The method as claimed in claim 12, wherein the integrated circuit chip includes a data processing unit.