# US 10,371,743 B2 · Diagnostics in TMR sensors > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,371,743 B2 - Document ID: US10371743B2 - Status: Granted - Kind: B2 - Application number: 15/859,405 - Filed: 2017-12-30 - Published: 2018-05-03 - Granted: 2019-08-06 - Earliest claimed: 2016-06-27 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Robert G. Biskeborn; Wlodzimierz S. Czarnecki; Icko E. T. Iben; Hugo E. Rothuizen - Web page: https://patentgrep.com/patent/US10371743B2 ## CPC - G01R 31/2829: {Testing of circuits in sensor or actuator systems (testing of apparatus for measuring electric or magnetic variables G01R35/00; testing of indicating or recording apparatus G01D; in airbag systems B60R21/0173; checking gas analysers G01N33/007; monitoring or fail-safe circuits for electromagnets H01F7/1844)} - G01R 33/0035: {Calibration of single magnetic sensors, e.g. integrated calibration} - G01R 33/098: {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors} - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) ## Abstract A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed. ## Claims ### Claim 1 A computer-implemented method comprising, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, responsive to detecting an operational anomaly in said tunneling magnetoresistive sensor: measuring a first resistance change in the presence of a positive bias current; measuring a second resistance change in the presence of a negative bias current; responsive to at least one of said first resistance change and said second resistance change being more positive than expected based on a device geometry for said tunneling magnetoresistive sensor, returning a probable determination that said operational anomaly is caused by a short across said tunneling magnetoresistive sensor; responsive to neither said first resistance change nor said second resistance change being more positive than expected based on said device geometry: measuring R_COLD across said tunneling magnetoresistive sensor; computing |ΔR_COLD| as compared with a reference R_COLD measured prior to said operational anomaly; and responsive to |ΔR_COLD|>ΔR_COLD_LIMIT, wherein ΔR_COLD_LIMIT is a predetermined limit value, determining that said operational anomaly is due to a change in magnetic state of said tunneling magnetoresistive sensor; wherein: measuring said first resistance change comprises: applying a first positive bias current across said tunneling magnetoresistive sensor, wherein said first positive bias current is at a sufficiently low magnitude to effectively not affect measured resistance for said tunneling magnetoresistive sensor; measuring a first positive resistance change in the presence of said first positive bias current; applying a second positive bias current across said tunneling magnetoresistive sensor, wherein said second positive bias current is of sufficiently greater magnitude than said first positive bias current to affect measured resistance for said tunneling magnetoresistive sensor; measuring a second positive resistance change in the presence of said second positive bias current; and determining said positive resistance change based on said first positive bias current and said second positive bias current; and determining said second resistance change comprises: applying a first negative bias current across said tunneling magnetoresistive sensor, wherein said first negative bias current is at a sufficiently low level to effectively not affect measured resistance for said tunneling magnetoresistive sensor; measuring a first negative resistance change in the presence of said first negative bias current; applying a second negative bias current across said tunneling magnetoresistive sensor, wherein said second negative bias current is of sufficiently greater magnitude than said first negative bias current to affect measured resistance for said tunneling magnetoresistive sensor; measuring a second negative resistance in the presence of said second negative bias current; and determining said negative resistance change based on said first negative bias current and said second negative bias current; and returning said probable determination comprises, responsive to at least one of said positive resistance change and said negative resistance change being more positive than a predetermined short detection limit, determining that said operational anomaly is probably caused by a short across said tunneling magnetoresistive sensor; wherein at least one of said second positive bias current and said second negative bias current is of a magnitude that is less than an operational limit based on said device geometry and at least sufficiently great to consistently affect measured resistance for said tunneling magnetoresistive sensor; wherein said tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium; wherein said computer implemented method further comprises, responsive to neither said first resistance change nor said second resistance change being more positive than expected based on said device geometry: measuring RCOLD across said tunneling magnetoresistive sensor; computing |ΔRCOLD| as compared with a reference RCOLD measured prior to said operational anomaly; and responsive to |ΔRCOLD|>ΔRCOLDLIMIT, wherein ΔRCOLDLIMIT is a predetermined limit value, determining that said operational anomaly is due to a change in magnetic state of said tunneling magnetoresistive sensor; wherein: measuring said first resistance change comprises: applying a first positive bias current across said tunneling magnetoresistive sensor, wherein said first positive bias current is at a sufficiently low magnitude to effectively not affect measured resistance for said tunneling magnetoresistive sensor; measuring a first positive resistance change in the presence of said first positive bias current; applying a second positive bias current across said tunneling magnetoresistive sensor, wherein said second positive bias current is of sufficiently greater magnitude than said first positive bias current to affect measured resistance for said tunneling magnetoresistive sensor; measuring a second positive resistance change in the presence of said second positive bias current; and determining said positive resistance change based on said first positive bias current and said second positive bias current; and determining said second resistance change comprises: applying a first negative bias current across said tunneling magnetoresistive sensor, wherein said first negative bias current is at a sufficiently low level to effectively not affect measured resistance for said tunneling magnetoresistive sensor; measuring a first negative resistance change in the presence of said first negative bias current; applying a second negative bias current across said tunneling magnetoresistive sensor, wherein said second negative bias current is of sufficiently greater magnitude than said first negative bias current to affect measured resistance for said tunneling magnetoresistive sensor; measuring a second negative resistance in the presence of said second negative bias current; and determining said negative resistance change based on said first negative bias current and said second negative bias current; and returning said probable determination comprises, responsive to at least one of said positive resistance change and said negative resistance change being more positive than a predetermined short detection limit, determining that said operational anomaly is probably caused by a short across said tunneling magnetoresistive sensor; wherein at least one of said second positive bias current and said second negative bias current is of a magnitude that is less than an operational limit based on said device geometry and at least sufficiently great to consistently affect measured resistance for said tunneling magnetoresistive sensor; wherein said computer implemented method further comprises, responsive to both said first resistance change being positive and said second resistance change being positive, returning a definite determination that said operational anomaly is caused by said short across said tunneling magnetoresistive sensor; and wherein said operational anomaly comprises a drop in resistance across said tunneling magnetoresistive sensor.